| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| PSMN5R6-60YLX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Polarisation: unipolar Mounting: SMD Pulsed drain current: 405A Power dissipation: 167W Gate charge: 66.8nC Features of semiconductor devices: logic level Drain current: 72A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 16.3mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN5R8-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Pulsed drain current: 360A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 28.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R0-25YLB,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 73A; Idm: 292A; 58W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 73A Pulsed drain current: 292A Power dissipation: 58W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R0-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 61A Pulsed drain current: 244A Power dissipation: 43W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.29mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R0-30YL,115 | NEXPERIA |
PSMN6R0-30YL.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN6R0-30YLDX | NEXPERIA |
PSMN6R0-30YLDX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN6R1-25MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 235A Power dissipation: 42W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.98mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R1-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; Idm: 263A; 47W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Pulsed drain current: 263A Power dissipation: 47W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R3-120PS | NEXPERIA |
PSMN6R3-120PS THT N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN6R4-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 47A Pulsed drain current: 264A Power dissipation: 51W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN6R5-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 13.6mΩ Kind of package: reel; tape Power dissipation: 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 45A Gate charge: 17.5nC Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R5-80BS,118 | NEXPERIA |
PSMN6R5-80BS.118 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN6R5-80PS,127 | NEXPERIA |
PSMN6R5-80PS.127 THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN6R7-40MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R7-40MSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R9-100YSFX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 88A Pulsed drain current: 360A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 50.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN7R0-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R0-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN7R0-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN7R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 76A Pulsed drain current: 260A Power dissipation: 51W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 14.7mΩ Kind of package: reel; tape Power dissipation: 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 63A Gate charge: 45nC Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1459 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN7R5-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 230A Power dissipation: 45W Case: LFPAK33; SOT1210 On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R5-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 346A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 19.7mΩ Mounting: SMD Gate charge: 60.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1488 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN7R6-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 481A Power dissipation: 296W Case: D2PAK; SOT404 On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 389A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 38.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 92A Pulsed drain current: 389A Power dissipation: 149W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R8-100PSEQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 473A Power dissipation: 294W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN8R0-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN8R0-80YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN8R2-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 326A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN8R3-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 274A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R5-100PSQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 429A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN8R5-40MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Mounting: SMD Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 42A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN8R5-40MSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Mounting: SMD Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 42A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 76A Pulsed drain current: 303A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN8R7-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R7-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN8R9-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN9R0-25MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 55A; Idm: 219A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 55A Pulsed drain current: 219A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN9R1-30YL,115 | NEXPERIA |
PSMN9R1-30YL.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN9R5-100BS,118 | NEXPERIA |
PSMN9R5-100BS.118 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN9R5-100PS,127 | NEXPERIA |
PSMN9R5-100PS.127 THT N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN9R5-30YLC,115 | NEXPERIA |
PSMN9R5-30YLC.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMN9R8-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 202A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 10.65mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR51-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 380A Pulsed drain current: 2174A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.46mΩ Mounting: SMD Gate charge: 186nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR55-40SSHJ | NEXPERIA |
PSMNR55-40SSHJ SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMNR58-30YLHX | NEXPERIA |
PSMNR58-30YLHX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMNR60-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 300A Pulsed drain current: 1758A Power dissipation: 268W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.82mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR67-30YLEX | NEXPERIA |
PSMNR67-30YLEX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PSMNR70-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Type of transistor: N-MOSFET Power dissipation: 268W Polarisation: unipolar Kind of package: reel; tape Gate charge: 157nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1589A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 30V Drain current: 281A On-state resistance: 2mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR70-40SSHJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 350A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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 |
PSMNR90-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 243nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR90-40YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 285A Pulsed drain current: 1613A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMNR90-50SLHAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 302A Pulsed drain current: 1711A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.03mΩ Mounting: SMD Gate charge: 383nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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 |
PSSI2021SAY,115 | NEXPERIA |
Category: Voltage regulators - PWM circuits Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC Type of integrated circuit: driver Kind of integrated circuit: CV/CC controller Case: SOT353 Output current: 50mA Supply voltage: 5...75V DC Mounting: SMD Operating temperature: -65...150°C Application: for LED applications Anzahl je Verpackung: 1 Stücke |
auf Bestellung 353 Stücke: Lieferzeit 7-14 Tag (e) |
|
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 |
PTVS10VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2840 Stücke: Lieferzeit 7-14 Tag (e) |
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PTVS10VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| PSMN5R6-60YLX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN5R8-40YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R0-25YLB,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 73A; Idm: 292A; 58W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 58W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 73A; Idm: 292A; 58W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 58W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R0-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 43W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.29mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 43W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.29mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R0-30YL,115 |
|
Hersteller: NEXPERIA
PSMN6R0-30YL.115 SMD N channel transistors
PSMN6R0-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN6R0-30YLDX |
|
Hersteller: NEXPERIA
PSMN6R0-30YLDX SMD N channel transistors
PSMN6R0-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN6R1-25MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 235A
Power dissipation: 42W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 8.98mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 235A
Power dissipation: 42W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 8.98mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R1-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; Idm: 263A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Pulsed drain current: 263A
Power dissipation: 47W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; Idm: 263A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Pulsed drain current: 263A
Power dissipation: 47W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R3-120PS |
|
Hersteller: NEXPERIA
PSMN6R3-120PS THT N channel transistors
PSMN6R3-120PS THT N channel transistors
Produkt ist nicht verfügbar
| PSMN6R4-30MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R5-25YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 13.6mΩ
Kind of package: reel; tape
Power dissipation: 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Gate charge: 17.5nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 13.6mΩ
Kind of package: reel; tape
Power dissipation: 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Gate charge: 17.5nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R5-80BS,118 |
|
Hersteller: NEXPERIA
PSMN6R5-80BS.118 SMD N channel transistors
PSMN6R5-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN6R5-80PS,127 |
|
Hersteller: NEXPERIA
PSMN6R5-80PS.127 THT N channel transistors
PSMN6R5-80PS.127 THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.98 EUR |
| 24+ | 2.97 EUR |
| 250+ | 1.9 EUR |
| PSMN6R7-40MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R7-40MSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN6R9-100YSFX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R0-100BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R0-100PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R0-30MLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R0-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R0-30YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.72 EUR |
| 134+ | 0.53 EUR |
| 142+ | 0.5 EUR |
| PSMN7R0-60YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 14.7mΩ
Kind of package: reel; tape
Power dissipation: 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 63A
Gate charge: 45nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 14.7mΩ
Kind of package: reel; tape
Power dissipation: 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 63A
Gate charge: 45nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.93 EUR |
| 43+ | 1.69 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| 500+ | 1.16 EUR |
| PSMN7R5-30MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R5-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R5-60YLX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| 56+ | 1.29 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| PSMN7R6-100BSEJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| PSMN7R6-60BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R6-60PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN7R8-100PSEQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R0-40BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R0-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.7 EUR |
| 47+ | 1.54 EUR |
| 53+ | 1.37 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
| PSMN8R0-80YLX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R2-80YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.93 EUR |
| 41+ | 1.74 EUR |
| 56+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| PSMN8R3-40YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R5-100PSQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R5-40MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Mounting: SMD
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 42A
On-state resistance: 21.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Mounting: SMD
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 42A
On-state resistance: 21.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R5-40MSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Mounting: SMD
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 42A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Mounting: SMD
Case: LFPAK33; SOT1210
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 239A
Drain-source voltage: 40V
Drain current: 42A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R5-60YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.53 EUR |
| 53+ | 1.37 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| PSMN8R7-80BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN8R7-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.47 EUR |
| 33+ | 2.23 EUR |
| 43+ | 1.67 EUR |
| 46+ | 1.58 EUR |
| PSMN8R9-100BSEJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN9R0-25MLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 55A; Idm: 219A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 55A
Pulsed drain current: 219A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 55A; Idm: 219A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 55A
Pulsed drain current: 219A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMN9R1-30YL,115 |
|
Hersteller: NEXPERIA
PSMN9R1-30YL.115 SMD N channel transistors
PSMN9R1-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN9R5-100BS,118 |
|
Hersteller: NEXPERIA
PSMN9R5-100BS.118 SMD N channel transistors
PSMN9R5-100BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN9R5-100PS,127 |
|
Hersteller: NEXPERIA
PSMN9R5-100PS.127 THT N channel transistors
PSMN9R5-100PS.127 THT N channel transistors
Produkt ist nicht verfügbar
| PSMN9R5-30YLC,115 |
|
Hersteller: NEXPERIA
PSMN9R5-30YLC.115 SMD N channel transistors
PSMN9R5-30YLC.115 SMD N channel transistors
Produkt ist nicht verfügbar
| PSMN9R8-30MLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 202A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 10.65mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 202A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 10.65mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR51-25YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR55-40SSHJ |
|
Hersteller: NEXPERIA
PSMNR55-40SSHJ SMD N channel transistors
PSMNR55-40SSHJ SMD N channel transistors
Produkt ist nicht verfügbar
| PSMNR58-30YLHX |
|
Hersteller: NEXPERIA
PSMNR58-30YLHX SMD N channel transistors
PSMNR58-30YLHX SMD N channel transistors
Produkt ist nicht verfügbar
| PSMNR60-25YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 300A
Pulsed drain current: 1758A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.82mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 300A
Pulsed drain current: 1758A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.82mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR67-30YLEX |
|
Hersteller: NEXPERIA
PSMNR67-30YLEX SMD N channel transistors
PSMNR67-30YLEX SMD N channel transistors
Produkt ist nicht verfügbar
| PSMNR70-30YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR70-40SSHJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 350A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 350A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR90-30BL,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR90-40YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSMNR90-50SLHAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 302A
Pulsed drain current: 1711A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.03mΩ
Mounting: SMD
Gate charge: 383nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 302A
Pulsed drain current: 1711A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.03mΩ
Mounting: SMD
Gate charge: 383nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PSSI2021SAY,115 |
|
Hersteller: NEXPERIA
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
Anzahl je Verpackung: 1 Stücke
auf Bestellung 353 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 230+ | 0.31 EUR |
| 256+ | 0.28 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| PTVS10VP1UP,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 228+ | 0.31 EUR |
| 318+ | 0.23 EUR |
| 336+ | 0.21 EUR |
| PTVS10VP1UTP,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar