Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PMEG60T20ELRX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; CFP3,SOD123W; 11ns Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 11ns Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Capacitance: 120pF Max. off-state voltage: 60V Max. forward voltage: 0.475V Load current: 2.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2440 Stücke: Lieferzeit 7-14 Tag (e) |
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PMEG60T30ELPX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T50ELPX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.69V Load current: 5A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMF170XP,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.36W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 904 Stücke: Lieferzeit 7-14 Tag (e) |
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PMF250XNEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.65nC Kind of channel: enhanced Pulsed drain current: 4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 395 Stücke: Lieferzeit 7-14 Tag (e) |
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PMF63UNEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Pulsed drain current: 8A Case: SC70; SOT323 On-state resistance: 96mΩ Mounting: SMD Gate charge: 5.85nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1880 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD175XNEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Case: SC88; SOT363; TSSOP6 On-state resistance: 411mΩ Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMGD280UN,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.55A Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±8V On-state resistance: 0.66Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2848 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD290UCEAX | NEXPERIA |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 450/-320mA Pulsed drain current: 3A Power dissipation: 0.99W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±8V On-state resistance: 380/850mΩ Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1505 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD780SN,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.31A; 410mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Power dissipation: 0.41W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3019 Stücke: Lieferzeit 7-14 Tag (e) |
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PMH400UNEH | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 570mA Pulsed drain current: 3A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 825mΩ Mounting: SMD Gate charge: 930pC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMH600UNEH | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: 3.2A Gate-source voltage: ±8V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 500mA On-state resistance: 1Ω Gate charge: 310pC Case: DFN0606-3; SOT8001 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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PMH950UPEH | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -360mA Pulsed drain current: -2A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMLL4148L,115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13321 Stücke: Lieferzeit 7-14 Tag (e) |
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PMLL4148L,135 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMLL4153,115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 75V Max. load current: 0.45A Max. forward voltage: 0.88V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMLL4448,115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. load current: 0.45A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2020 Stücke: Lieferzeit 7-14 Tag (e) |
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PMLL4448,135 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. load current: 0.45A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMMT491A,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry Current gain: 300...900 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Polarisation: bipolar Frequency: 150MHz Collector-emitter voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3485 Stücke: Lieferzeit 7-14 Tag (e) |
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PMMT591A,215 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Kind of package: reel; tape Polarisation: bipolar Power dissipation: 0.25W Type of transistor: PNP Pulsed collector current: 2A Collector current: 1A Current gain: 300...800 Collector-emitter voltage: 40V Frequency: 150MHz Case: SOT23; TO236AB Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2650 Stücke: Lieferzeit 7-14 Tag (e) |
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PMN100EPAX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN120ENEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN16XNEX | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMN20ENAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 40V Drain current: 4.4A On-state resistance: 44mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN230ENEAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A Mounting: SMD Kind of package: reel; tape Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 7.1A Gate charge: 3.8nC Case: SC74; SOT457; TSOP6 Drain-source voltage: 60V Drain current: 1.1A On-state resistance: 482mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN25ENEAX | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMN25ENEH | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMN25ENEX | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMN30ENEAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.8A Pulsed drain current: 22A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30UNX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 18A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 61mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30XPAX | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMN30XPEX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30XPX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.55W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMN40ENAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 93mΩ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Drain current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN40SNAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 76mΩ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 19A Drain current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAH | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A Mounting: SMD Case: SC74; SOT457; TSOP6 Features of semiconductor devices: ESD protected gate Kind of package: reel; tape On-state resistance: 64mΩ Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 17.3nC Kind of channel: enhanced Pulsed drain current: -16A Drain current: -2.9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMN48XP,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN48XP,125 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN48XPAX | NEXPERIA |
![]() ![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN50EPEX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN52XPX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape On-state resistance: 91mΩ Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 12nC Kind of channel: enhanced Pulsed drain current: -15A Drain current: -2.3A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEH | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN70XPX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 0.13Ω Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Drain current: -2A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMP4201V,115 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMP4501V,115 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Frequency: 250MHz Collector-emitter voltage: 45V Current gain: 200...450 Collector current: 0.1A Pulsed collector current: 0.2A Type of transistor: NPN x2 Application: automotive industry Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT666 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMP5201V,115 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT666 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMP5201Y,115 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1645 Stücke: Lieferzeit 7-14 Tag (e) |
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PMP5201Y,135 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMP5501V,115 | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMP5501Y,115 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMPB100XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Case: DFN2020MD-6; SOT1220 Drain-source voltage: -20V Drain current: -2A On-state resistance: 191mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -13A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB10XNE,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB10XNEZ | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB10XNX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 30nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 38A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMPB11EN,115 | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMPB12UNEAX | NEXPERIA |
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Produkt ist nicht verfügbar |
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PMPB12UNEX | NEXPERIA |
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Produkt ist nicht verfügbar |
PMEG60T20ELRX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; CFP3,SOD123W; 11ns
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; CFP3,SOD123W; 11ns
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2440 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.37 EUR |
252+ | 0.28 EUR |
327+ | 0.22 EUR |
527+ | 0.14 EUR |
541+ | 0.13 EUR |
589+ | 0.12 EUR |
PMEG60T30ELPX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMEG60T50ELPX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMF170XP,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 904 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
272+ | 0.26 EUR |
424+ | 0.17 EUR |
516+ | 0.14 EUR |
904+ | 0.079 EUR |
PMF250XNEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.65nC
Kind of channel: enhanced
Pulsed drain current: 4A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.65nC
Kind of channel: enhanced
Pulsed drain current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 395 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
249+ | 0.29 EUR |
329+ | 0.22 EUR |
395+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.08 EUR |
PMF63UNEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 8A
Case: SC70; SOT323
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 5.85nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 8A
Case: SC70; SOT323
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 5.85nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
261+ | 0.27 EUR |
323+ | 0.22 EUR |
407+ | 0.18 EUR |
556+ | 0.13 EUR |
575+ | 0.12 EUR |
PMGD175XNEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMGD280UN,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2848 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.37 EUR |
253+ | 0.28 EUR |
313+ | 0.23 EUR |
374+ | 0.19 EUR |
443+ | 0.16 EUR |
473+ | 0.15 EUR |
500+ | 0.14 EUR |
PMGD290UCEAX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 450/-320mA
Pulsed drain current: 3A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 380/850mΩ
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 450/-320mA
Pulsed drain current: 3A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 380/850mΩ
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1505 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
374+ | 0.19 EUR |
414+ | 0.17 EUR |
472+ | 0.15 EUR |
506+ | 0.14 EUR |
535+ | 0.13 EUR |
PMGD780SN,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.31A; 410mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.41W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.31A; 410mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.41W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3019 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
218+ | 0.33 EUR |
257+ | 0.28 EUR |
385+ | 0.19 EUR |
455+ | 0.16 EUR |
582+ | 0.12 EUR |
PMH400UNEH |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMH600UNEH |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMH950UPEH |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMLL4148L,115 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13321 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
622+ | 0.12 EUR |
841+ | 0.085 EUR |
1005+ | 0.071 EUR |
1174+ | 0.061 EUR |
1725+ | 0.041 EUR |
2995+ | 0.024 EUR |
3165+ | 0.023 EUR |
PMLL4148L,135 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMLL4153,115 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMLL4448,115 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2020 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
417+ | 0.17 EUR |
550+ | 0.13 EUR |
807+ | 0.089 EUR |
968+ | 0.074 EUR |
1450+ | 0.049 EUR |
2020+ | 0.036 EUR |
PMLL4448,135 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMMT491A,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Current gain: 300...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
Frequency: 150MHz
Collector-emitter voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Current gain: 300...900
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
Frequency: 150MHz
Collector-emitter voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3485 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
243+ | 0.29 EUR |
291+ | 0.25 EUR |
435+ | 0.16 EUR |
516+ | 0.14 EUR |
897+ | 0.08 EUR |
947+ | 0.076 EUR |
PMMT591A,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
655+ | 0.11 EUR |
730+ | 0.098 EUR |
870+ | 0.082 EUR |
920+ | 0.078 EUR |
PMN100EPAX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN120ENEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN20ENAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 40V
Drain current: 4.4A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 40V
Drain current: 4.4A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN230ENEAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN30ENEAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN30UNX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN30XPEX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN30XPX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMN40ENAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN40SNAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN42XPEAH |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN42XPEAX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
On-state resistance: 64mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: -16A
Drain current: -2.9A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
On-state resistance: 64mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: -16A
Drain current: -2.9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMN48XP,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN48XP,125 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN48XPAX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN50EPEX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN52XPX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
On-state resistance: 91mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 12nC
Kind of channel: enhanced
Pulsed drain current: -15A
Drain current: -2.3A
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
On-state resistance: 91mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 12nC
Kind of channel: enhanced
Pulsed drain current: -15A
Drain current: -2.3A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMN55ENEAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN55ENEH |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN55ENEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMN70XPX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Drain current: -2A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Drain current: -2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMP4201V,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMP4501V,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Frequency: 250MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Application: automotive industry
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT666
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Frequency: 250MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Application: automotive industry
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT666
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMP5201V,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMP5201Y,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1645 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
246+ | 0.29 EUR |
314+ | 0.23 EUR |
332+ | 0.22 EUR |
PMP5201Y,135 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMP5501Y,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB100XPEAX |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNE,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar