Produkte > NEXPERIA > Alle Produkte des Herstellers NEXPERIA (82783) > Seite 392 nach 1380

Wählen Sie Seite:   [  << Vorherige Seite ]  1 138 276 387 388 389 390 391 392 393 394 395 396 397 414 552 690 828 966 1104 1242 1380  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
PMP5201V,115 NEXPERIA PMP5201V.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMP5201Y,115 PMP5201Y,115 NEXPERIA PMP5201Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1645 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
246+ 0.29 EUR
314+ 0.23 EUR
332+ 0.22 EUR
Mindestbestellmenge: 186
PMP5201Y,135 PMP5201Y,135 NEXPERIA PMP5201Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMP5501V,115 NEXPERIA PMP5501V.pdf PMP5501V.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMP5501Y,115 PMP5501Y,115 NEXPERIA PMP5501Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB100XPEAX NEXPERIA Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNE,115 NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNEZ NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNX NEXPERIA PMPB10XN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB11EN,115 NEXPERIA PMPB11EN.pdf PMPB11EN.115 SMD N channel transistors
Produkt ist nicht verfügbar
PMPB12UNEAX NEXPERIA PMPB12UNEA.pdf PMPB12UNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB12UNEX NEXPERIA PMPB12UNE.pdf PMPB12UNEX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB13XNE,115 NEXPERIA PMPB13XNE.pdf PMPB13XNE.115 SMD N channel transistors
Produkt ist nicht verfügbar
PMPB13XNEAX NEXPERIA PMPB13XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB14XNX NEXPERIA PMPB14XN.pdf PMPB14XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB14XPX NEXPERIA PMPB14XP.pdf PMPB14XPX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB15XN,115 NEXPERIA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB15XP,115 NEXPERIA PMPB15XP.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB15XPAX NEXPERIA PMPB15XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB15XPH NEXPERIA PMPB15XP.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB16EPX NEXPERIA PMPB16EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB19XP,115 NEXPERIA PMPB19XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB20EN,115 NEXPERIA PMPB20EN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20ENZ NEXPERIA PMPB20EN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20XPE,115 NEXPERIA PMPB20XPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Pulsed drain current: -30A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20XPEAX NEXPERIA PMPB20XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB215ENEA/FX NEXPERIA PMPB215ENEA.pdf PMPB215ENEA/FX SMD N channel transistors
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)
197+0.36 EUR
276+ 0.26 EUR
292+ 0.25 EUR
3000+ 0.24 EUR
Mindestbestellmenge: 197
PMPB215ENEAX NEXPERIA PMPB215ENEA.pdf PMPB215ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB23XNE,115 NEXPERIA PHGLS25777-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.4A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.4A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB24EPX NEXPERIA PMPB24EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Drain-source voltage: -30V
Drain current: -4.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB27EP,115 NEXPERIA PMPB27EP.pdf PMPB27EP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB27EPAX NEXPERIA PMPB27EPA.pdf PMPB27EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB29XPE,115 NEXPERIA PMPB29XPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -12A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Pulsed drain current: -12A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -3.2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB29XPEAX NEXPERIA PMPB29XPEA.pdf PMPB29XPEAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB30XPEX NEXPERIA Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB33XP,115 NEXPERIA PMPB33XP.pdf PMPB33XP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB43XPE,115 NEXPERIA PMPB43XPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -12A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB47XP,115 NEXPERIA PMPB47XP.pdf PMPB47XP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB48EP,115 NEXPERIA PMPB48EP.pdf PMPB48EP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB48EPAX NEXPERIA PMPB48EPA.pdf PMPB48EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB55ENEAX NEXPERIA PMPB55ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB55XNEAX NEXPERIA PMPB55XNEA.pdf PMPB55XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEA/FX NEXPERIA PMPB85ENEA.pdf PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEAX NEXPERIA PMPB85ENEA.pdf PMPB85ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB8XNX NEXPERIA PMPB8XN.pdf PMPB8XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEA/FX NEXPERIA PMPB95ENEA.pdf PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEAX NEXPERIA PMPB95ENEA.pdf PMPB95ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMSS3904,115 PMSS3904,115 NEXPERIA PMSS3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
PMSS3906,115 PMSS3906,115 NEXPERIA PMSS3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
404+ 0.18 EUR
898+ 0.08 EUR
1650+ 0.043 EUR
1745+ 0.041 EUR
Mindestbestellmenge: 278
PMST2222A,115 PMST2222A,115 NEXPERIA PMST2222_2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2369,115 PMST2369,115 NEXPERIA PMST2369.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Polarisation: bipolar
Current gain: 20...120
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
379+ 0.19 EUR
870+ 0.082 EUR
1403+ 0.051 EUR
1484+ 0.048 EUR
3000+ 0.046 EUR
Mindestbestellmenge: 264
PMST3904,115 PMST3904,115 NEXPERIA PMST3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
1520+0.047 EUR
2285+ 0.031 EUR
2530+ 0.028 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
PMST5551,115 PMST5551,115 NEXPERIA PMST5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SC70; SOT323
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2730 Stücke:
Lieferzeit 7-14 Tag (e)
660+0.11 EUR
870+ 0.083 EUR
970+ 0.074 EUR
1190+ 0.06 EUR
1260+ 0.057 EUR
3000+ 0.055 EUR
Mindestbestellmenge: 660
PMSTA06,115 NEXPERIA PMSTA05_06.pdf PMSTA06.115 NPN SMD transistors
auf Bestellung 1060 Stücke:
Lieferzeit 7-14 Tag (e)
1060+0.067 EUR
12000+ 0.042 EUR
Mindestbestellmenge: 1060
PMSTA56,115 NEXPERIA PMSTA55_56.pdf PMSTA56.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMT200EPEX PMT200EPEX NEXPERIA PMT200EPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
PMT280ENEAX NEXPERIA PMT280ENEA.pdf PMT280ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMT560ENEAX PMT560ENEAX NEXPERIA PMT560ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.7A
Pulsed drain current: 4.4A
Case: SC73; SOT223
On-state resistance: 1.62Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEAR NEXPERIA PMV100ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100EPAR PMV100EPAR NEXPERIA PMV100EPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.4A
On-state resistance: 276mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9A
Drain-source voltage: -60V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMP5201V,115 PMP5201V.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMP5201Y,115 PMP5201Y.pdf
PMP5201Y,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1645 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
246+ 0.29 EUR
314+ 0.23 EUR
332+ 0.22 EUR
Mindestbestellmenge: 186
PMP5201Y,135 PMP5201Y.pdf
PMP5201Y,135
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMP5501V,115 PMP5501V.pdf
Hersteller: NEXPERIA
PMP5501V.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMP5501Y,115 PMP5501Y.pdf
PMP5501Y,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB100XPEAX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNE,115 PMPB10XNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNEZ PMPB10XNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB10XNX PMPB10XN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB11EN,115 PMPB11EN.pdf
Hersteller: NEXPERIA
PMPB11EN.115 SMD N channel transistors
Produkt ist nicht verfügbar
PMPB12UNEAX PMPB12UNEA.pdf
Hersteller: NEXPERIA
PMPB12UNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB12UNEX PMPB12UNE.pdf
Hersteller: NEXPERIA
PMPB12UNEX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB13XNE,115 PMPB13XNE.pdf
Hersteller: NEXPERIA
PMPB13XNE.115 SMD N channel transistors
Produkt ist nicht verfügbar
PMPB13XNEAX
Hersteller: NEXPERIA
PMPB13XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB14XNX PMPB14XN.pdf
Hersteller: NEXPERIA
PMPB14XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB14XPX PMPB14XP.pdf
Hersteller: NEXPERIA
PMPB14XPX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB15XN,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB15XP,115 PMPB15XP.PDF
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB15XPAX PMPB15XPA.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB15XPH PMPB15XP.PDF
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB16EPX PMPB16EP.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB19XP,115 PMPB19XP.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB20EN,115 PMPB20EN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20ENZ PMPB20EN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20XPE,115 PMPB20XPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Pulsed drain current: -30A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB20XPEAX PMPB20XPEA.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB215ENEA/FX PMPB215ENEA.pdf
Hersteller: NEXPERIA
PMPB215ENEA/FX SMD N channel transistors
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
197+0.36 EUR
276+ 0.26 EUR
292+ 0.25 EUR
3000+ 0.24 EUR
Mindestbestellmenge: 197
PMPB215ENEAX PMPB215ENEA.pdf
Hersteller: NEXPERIA
PMPB215ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB23XNE,115 PHGLS25777-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.4A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.4A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB24EPX PMPB24EP.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Drain-source voltage: -30V
Drain current: -4.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB27EP,115 PMPB27EP.pdf
Hersteller: NEXPERIA
PMPB27EP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB27EPAX PMPB27EPA.pdf
Hersteller: NEXPERIA
PMPB27EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB29XPE,115 PMPB29XPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -12A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Pulsed drain current: -12A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -3.2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB29XPEAX PMPB29XPEA.pdf
Hersteller: NEXPERIA
PMPB29XPEAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB30XPEX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB33XP,115 PMPB33XP.pdf
Hersteller: NEXPERIA
PMPB33XP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB43XPE,115 PMPB43XPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -12A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMPB47XP,115 PMPB47XP.pdf
Hersteller: NEXPERIA
PMPB47XP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB48EP,115 PMPB48EP.pdf
Hersteller: NEXPERIA
PMPB48EP.115 SMD P channel transistors
Produkt ist nicht verfügbar
PMPB48EPAX PMPB48EPA.pdf
Hersteller: NEXPERIA
PMPB48EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB55ENEAX PMPB55ENEA.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB55XNEAX PMPB55XNEA.pdf
Hersteller: NEXPERIA
PMPB55XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEA/FX PMPB85ENEA.pdf
Hersteller: NEXPERIA
PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEAX PMPB85ENEA.pdf
Hersteller: NEXPERIA
PMPB85ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB8XNX PMPB8XN.pdf
Hersteller: NEXPERIA
PMPB8XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEA/FX PMPB95ENEA.pdf
Hersteller: NEXPERIA
PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEAX PMPB95ENEA.pdf
Hersteller: NEXPERIA
PMPB95ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMSS3904,115 PMSS3904.pdf
PMSS3904,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
PMSS3906,115 PMSS3906.pdf
PMSS3906,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
404+ 0.18 EUR
898+ 0.08 EUR
1650+ 0.043 EUR
1745+ 0.041 EUR
Mindestbestellmenge: 278
PMST2222A,115 PMST2222_2222A.pdf
PMST2222A,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2369,115 PMST2369.pdf
PMST2369,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Polarisation: bipolar
Current gain: 20...120
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
264+0.27 EUR
379+ 0.19 EUR
870+ 0.082 EUR
1403+ 0.051 EUR
1484+ 0.048 EUR
3000+ 0.046 EUR
Mindestbestellmenge: 264
PMST3904,115 PMST3904.pdf
PMST3904,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2285+ 0.031 EUR
2530+ 0.028 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
PMST5551,115 PMST5551.pdf
PMST5551,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SC70; SOT323
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2730 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
660+0.11 EUR
870+ 0.083 EUR
970+ 0.074 EUR
1190+ 0.06 EUR
1260+ 0.057 EUR
3000+ 0.055 EUR
Mindestbestellmenge: 660
PMSTA06,115 PMSTA05_06.pdf
Hersteller: NEXPERIA
PMSTA06.115 NPN SMD transistors
auf Bestellung 1060 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1060+0.067 EUR
12000+ 0.042 EUR
Mindestbestellmenge: 1060
PMSTA56,115 PMSTA55_56.pdf
Hersteller: NEXPERIA
PMSTA56.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMT200EPEX PMT200EPE.pdf
PMT200EPEX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
PMT280ENEAX PMT280ENEA.pdf
Hersteller: NEXPERIA
PMT280ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMT560ENEAX PMT560ENEA.pdf
PMT560ENEAX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.7A
Pulsed drain current: 4.4A
Case: SC73; SOT223
On-state resistance: 1.62Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEA.pdf
PMV100ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100EPAR PMV100EPA.pdf
PMV100EPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.4A
On-state resistance: 276mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9A
Drain-source voltage: -60V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 138 276 387 388 389 390 391 392 393 394 395 396 397 414 552 690 828 966 1104 1242 1380  [ Nächste Seite >> ]