![PMV100ENEAR PMV100ENEAR](https://www.mouser.com/images/nexperia/lrg/Nexperia_SOT23_236AB-3_SPL.jpg)
auf Bestellung 20644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 0.28 EUR |
14+ | 0.22 EUR |
100+ | 0.21 EUR |
3000+ | 0.18 EUR |
24000+ | 0.17 EUR |
45000+ | 0.16 EUR |
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Technische Details PMV100ENEAR Nexperia
Description: MOSFET N-CH 30V 3A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, Power Dissipation (Max): 460mW (Ta), 4.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV100ENEAR nach Preis ab 0.22 EUR bis 0.76 EUR
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PMV100ENEAR | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Power Dissipation (Max): 460mW (Ta), 4.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 1647 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV100ENEAR | Hersteller : NEXPERIA |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV100ENEAR | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 12A Case: SOT23; TO236AB On-state resistance: 0.118Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV100ENEAR | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Power Dissipation (Max): 460mW (Ta), 4.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMV100ENEAR | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 12A Case: SOT23; TO236AB On-state resistance: 0.118Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
Produkt ist nicht verfügbar |