| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PMEG6030ELPX | NEXPERIA |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Capacitance: 315pF Max. forward voltage: 0.67V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 70A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG6030EP-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Capacitance: 360pF Case: CFP5; SOD128 Max. forward voltage: 0.53V Leakage current: 0.2mA Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 2.1W Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMEG6030EP,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 50A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3726 Stücke: Lieferzeit 7-14 Tag (e) |
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PMEG6030EP/8X | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 50A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 765 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMEG6030ETPX | NEXPERIA |
PMEG6030ETPX SMD Schottky diodes |
auf Bestellung 3180 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMEG6030EVP-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 575pF Max. forward voltage: 0.475V Case: CFP5; SOD128 Kind of package: reel; tape Leakage current: 0.4mA Max. forward impulse current: 70A Power dissipation: 2.5W Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMEG6030EVPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 4.2A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 575pF Max. forward voltage: 0.475V Case: CFP5; SOD128 Kind of package: reel; tape Leakage current: 300mA Max. forward impulse current: 70A Power dissipation: 2.5W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4109 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMEG6045ETP-QX | NEXPERIA | PMEG6045ETP-QX SMD Schottky diodes |
Produkt ist nicht verfügbar |
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| PMEG6045ETPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 4.5A Semiconductor structure: single diode Capacitance: 575pF Max. forward voltage: 0.53V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 70A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T10ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 280pF Max. off-state voltage: 60V Max. forward voltage: 0.59V Load current: 1A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T10ELRX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 13ns Max. forward impulse current: 30A Leakage current: 0.2mA Power dissipation: 1.15W Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Capacitance: 245pF Max. off-state voltage: 60V Max. forward voltage: 0.6V Load current: 1A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T20ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 400pF Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 2A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T20ELRX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 11ns Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Capacitance: 120pF Max. off-state voltage: 60V Max. forward voltage: 0.475V Load current: 2.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2440 Stücke: Lieferzeit 7-14 Tag (e) |
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PMEG60T30ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMEG60T50ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.69V Load current: 5A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMF170XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.36W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 904 Stücke: Lieferzeit 7-14 Tag (e) |
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PMF250XNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Case: SC70; SOT323 On-state resistance: 416mΩ Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 395 Stücke: Lieferzeit 7-14 Tag (e) |
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PMF63UNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Pulsed drain current: 8A Case: SC70; SOT323 On-state resistance: 96mΩ Mounting: SMD Gate charge: 5.85nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1880 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD175XNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Case: SC88; SOT363; TSSOP6 On-state resistance: 411mΩ Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMGD280UN,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.55A Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±8V On-state resistance: 0.66Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2848 Stücke: Lieferzeit 7-14 Tag (e) |
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PMGD290UCEAX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 450/-320mA Pulsed drain current: 3A Power dissipation: 0.99W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±8V On-state resistance: 380/850mΩ Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1505 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMGD780SN,115 | NEXPERIA |
PMGD780SN.115 Multi channel transistors |
auf Bestellung 1654 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMH400UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 570mA Pulsed drain current: 3A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 825mΩ Mounting: SMD Gate charge: 930pC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| PMH600UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: 3.2A Gate-source voltage: ±8V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 500mA On-state resistance: 1Ω Gate charge: 310pC Case: DFN0606-3; SOT8001 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| PMH950UPEH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -360mA Pulsed drain current: -2A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMLL4148L,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 18350 Stücke: Lieferzeit 7-14 Tag (e) |
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PMLL4148L,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMLL4153,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 75V Max. load current: 0.45A Max. forward voltage: 0.88V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMLL4448,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2540 Stücke: Lieferzeit 7-14 Tag (e) |
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PMLL4448,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMMT491A,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 2A Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3485 Stücke: Lieferzeit 7-14 Tag (e) |
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PMMT591A,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Kind of package: reel; tape Polarisation: bipolar Power dissipation: 0.25W Type of transistor: PNP Pulsed collector current: 2A Collector current: 1A Current gain: 300...800 Collector-emitter voltage: 40V Frequency: 150MHz Case: SOT23; TO236AB Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2650 Stücke: Lieferzeit 7-14 Tag (e) |
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PMN100EPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN120ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMN16XNEX | NEXPERIA |
PMN16XNEX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMN20ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 40V Drain current: 4.4A On-state resistance: 44mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN230ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A Mounting: SMD Kind of package: reel; tape Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 7.1A Gate charge: 3.8nC Case: SC74; SOT457; TSOP6 Drain-source voltage: 60V Drain current: 1.1A On-state resistance: 482mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMN25ENEAX | NEXPERIA |
PMN25ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMN25ENEH | NEXPERIA |
PMN25ENEH SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMN25ENEX | NEXPERIA |
PMN25ENEX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMN30ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.8A Pulsed drain current: 22A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30UNX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 18A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 61mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMN30XPAX | NEXPERIA |
PMN30XPAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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PMN30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN30XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.55W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMN40ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 93mΩ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Drain current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN40SNAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 76mΩ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 19A Drain current: 3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A Mounting: SMD Case: SC74; SOT457; TSOP6 Features of semiconductor devices: ESD protected gate Kind of package: reel; tape On-state resistance: 64mΩ Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 17.3nC Kind of channel: enhanced Pulsed drain current: -16A Drain current: -2.9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMN48XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN48XP,125 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN48XPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN52XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape On-state resistance: 91mΩ Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 12nC Kind of channel: enhanced Pulsed drain current: -15A Drain current: -2.3A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN70XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench On-state resistance: 0.13Ω Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Drain current: -2A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMP4201V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| PMP4501V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Frequency: 250MHz Collector-emitter voltage: 45V Current gain: 200...450 Collector current: 0.1A Pulsed collector current: 0.2A Type of transistor: NPN x2 Application: automotive industry Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT666 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
| PMEG6030ELPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 315pF
Max. forward voltage: 0.67V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 315pF
Max. forward voltage: 0.67V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMEG6030EP-QX |
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 360pF
Case: CFP5; SOD128
Max. forward voltage: 0.53V
Leakage current: 0.2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 2.1W
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 360pF
Case: CFP5; SOD128
Max. forward voltage: 0.53V
Leakage current: 0.2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 2.1W
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMEG6030EP,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3726 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 209+ | 0.34 EUR |
| 232+ | 0.31 EUR |
| 291+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| PMEG6030EP/8X |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 765 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 224+ | 0.32 EUR |
| 312+ | 0.23 EUR |
| 330+ | 0.22 EUR |
| PMEG6030ETPX |
|
Hersteller: NEXPERIA
PMEG6030ETPX SMD Schottky diodes
PMEG6030ETPX SMD Schottky diodes
auf Bestellung 3180 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| PMEG6030EVP-QX |
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 0.4mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 0.4mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMEG6030EVPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 4.2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 300mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 4.2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 300mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4109 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.44 EUR |
| 200+ | 0.36 EUR |
| 291+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| PMEG6045ETPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.5A
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.5A
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMEG60T10ELPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 280pF
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 1A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 280pF
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 1A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMEG60T10ELRX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 30A
Leakage current: 0.2mA
Power dissipation: 1.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 245pF
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 1A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 30A
Leakage current: 0.2mA
Power dissipation: 1.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 245pF
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 1A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMEG60T20ELPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 400pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 400pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMEG60T20ELRX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2440 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 272+ | 0.26 EUR |
| 404+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| PMEG60T30ELPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMEG60T50ELPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
Anzahl je Verpackung: 3000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMF170XP,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 904 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 272+ | 0.26 EUR |
| 424+ | 0.17 EUR |
| 516+ | 0.14 EUR |
| 904+ | 0.079 EUR |
| PMF250XNEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC70; SOT323
On-state resistance: 416mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC70; SOT323
On-state resistance: 416mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 395 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 348+ | 0.21 EUR |
| 395+ | 0.19 EUR |
| 512+ | 0.14 EUR |
| PMF63UNEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 8A
Case: SC70; SOT323
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 5.85nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 8A
Case: SC70; SOT323
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 5.85nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1880 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 261+ | 0.27 EUR |
| 323+ | 0.22 EUR |
| 407+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| PMGD175XNEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMGD280UN,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2848 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 338+ | 0.21 EUR |
| 376+ | 0.19 EUR |
| 470+ | 0.15 EUR |
| 497+ | 0.14 EUR |
| PMGD290UCEAX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 450/-320mA
Pulsed drain current: 3A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 380/850mΩ
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 450/-320mA
Pulsed drain current: 3A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 380/850mΩ
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1505 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 472+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| 535+ | 0.13 EUR |
| PMGD780SN,115 |
|
Hersteller: NEXPERIA
PMGD780SN.115 Multi channel transistors
PMGD780SN.115 Multi channel transistors
auf Bestellung 1654 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 343+ | 0.21 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| PMH400UNEH |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| PMH600UNEH |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| PMH950UPEH |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| PMLL4148L,115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 910+ | 0.079 EUR |
| 2140+ | 0.033 EUR |
| 2400+ | 0.03 EUR |
| 2960+ | 0.024 EUR |
| 3130+ | 0.023 EUR |
| PMLL4148L,135 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| PMLL4153,115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PMLL4448,115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2540 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 455+ | 0.16 EUR |
| 589+ | 0.12 EUR |
| 754+ | 0.095 EUR |
| 1316+ | 0.054 EUR |
| 2093+ | 0.034 EUR |
| 2315+ | 0.031 EUR |
| 2540+ | 0.029 EUR |
| PMLL4448,135 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| PMMT491A,215 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3485 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 350+ | 0.21 EUR |
| 645+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 900+ | 0.08 EUR |
| 950+ | 0.075 EUR |
| PMMT591A,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 655+ | 0.11 EUR |
| 730+ | 0.098 EUR |
| 870+ | 0.082 EUR |
| 920+ | 0.078 EUR |
| PMN100EPAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN120ENEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN20ENAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 40V
Drain current: 4.4A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 40V
Drain current: 4.4A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN230ENEAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN30ENEAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN30UNX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN30XPEX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN30XPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMN40ENAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN40SNAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain current: 3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN42XPEAH |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN42XPEAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
On-state resistance: 64mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: -16A
Drain current: -2.9A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
On-state resistance: 64mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: -16A
Drain current: -2.9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMN48XP,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN48XP,125 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN48XPAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
On-state resistance: 80mΩ
Polarisation: unipolar
Drain current: -2.5A
Drain-source voltage: -20V
Gate charge: 13nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN50EPEX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN52XPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
On-state resistance: 91mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 12nC
Kind of channel: enhanced
Pulsed drain current: -15A
Drain current: -2.3A
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
On-state resistance: 91mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 12nC
Kind of channel: enhanced
Pulsed drain current: -15A
Drain current: -2.3A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PMN55ENEAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN55ENEH |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN55ENEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN70XPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Drain current: -2A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Drain current: -2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMP4201V,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| PMP4501V,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Frequency: 250MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Application: automotive industry
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT666
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Frequency: 250MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Application: automotive industry
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT666
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar