Technische Details PMN120ENEX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A, Case: SC74; SOT457; TSOP6, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 7.4nC, Technology: Trench, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 10A, Drain-source voltage: 60V, Drain current: 1.5A, On-state resistance: 246mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote PMN120ENEX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMN120ENEX | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN120ENEX | Hersteller : Nexperia USA Inc. |
Description: PMN120ENE - 60V, N-CHANNEL TRENC |
Produkt ist nicht verfügbar |
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PMN120ENEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |