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PMBT3904MB,315 NEXPERIA PMBT3904MB.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT3904RAZ NEXPERIA PMBT3904RA.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 480mW; DFN1412-6,SOT1268-1
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.48W
Case: DFN1412-6; SOT1268-1
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMBT3904VS,115 PMBT3904VS,115 NEXPERIA PMBT3904VS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMBT3906,215 PMBT3906,215 NEXPERIA PMBT3906.215.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7015 Stücke:
Lieferzeit 7-14 Tag (e)
1345+0.053 EUR
2451+ 0.029 EUR
2841+ 0.025 EUR
3572+ 0.02 EUR
3788+ 0.019 EUR
Mindestbestellmenge: 1345
PMBT3906M,315 NEXPERIA PMBT3906M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006-3,SOT883
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006-3; SOT883
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMBT3906MB,315 NEXPERIA PMBT3906MB.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMBT3906VS,115 PMBT3906VS,115 NEXPERIA PMBT3906VS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT3946VPN,115 NEXPERIA PMBT3946VPN.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMBT3946YPN,115 PMBT3946YPN,115 NEXPERIA PMBT3946YPN.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT4401,215 PMBT4401,215 NEXPERIA PMBT4401.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 0.6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 250MHz
Collector-emitter voltage: 40V
Current gain: 300
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4274 Stücke:
Lieferzeit 7-14 Tag (e)
1900+0.038 EUR
2100+ 0.034 EUR
2325+ 0.031 EUR
3025+ 0.024 EUR
3200+ 0.022 EUR
Mindestbestellmenge: 1900
PMBT4403,215 PMBT4403,215 NEXPERIA PMBT4403.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT4403YSX PMBT4403YSX NEXPERIA PMBT4403YS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT5550,215 PMBT5550,215 NEXPERIA PMBT5550.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 140V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5260 Stücke:
Lieferzeit 7-14 Tag (e)
1195+0.06 EUR
1330+ 0.054 EUR
1735+ 0.041 EUR
1835+ 0.039 EUR
Mindestbestellmenge: 1195
PMBT5551,215 PMBT5551,215 NEXPERIA PMBT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 160V
Current gain: 30...250
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT6429,215 PMBT6429,215 NEXPERIA PMBT6429.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Application: automotive industry
Collector-emitter voltage: 45V
Current gain: 1250
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 700MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBTA06-QR PMBTA06-QR NEXPERIA PMBTA06-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PMBTA06,215 PMBTA06,215 NEXPERIA PMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
1405+0.051 EUR
1640+ 0.044 EUR
2045+ 0.035 EUR
2160+ 0.033 EUR
12000+ 0.032 EUR
Mindestbestellmenge: 1405
PMBTA13,215 PMBTA13,215 NEXPERIA PMBTA13_PMBTA14.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SOT23; TO236AB
Frequency: 125MHz
Collector-emitter voltage: 30V
Current gain: 5000...10000
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.25W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBTA14,215 PMBTA14,215 NEXPERIA PMBTA14.215.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2805 Stücke:
Lieferzeit 7-14 Tag (e)
944+0.076 EUR
1069+ 0.067 EUR
1117+ 0.064 EUR
Mindestbestellmenge: 944
PMBTA42,215 PMBTA42,215 NEXPERIA PMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2315 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
500+ 0.14 EUR
719+ 0.1 EUR
1007+ 0.071 EUR
1200+ 0.06 EUR
1707+ 0.042 EUR
1806+ 0.04 EUR
Mindestbestellmenge: 264
PMBTA42DS,125 PMBTA42DS,125 NEXPERIA PMBTA42DS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Collector-emitter voltage: 300V
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMBTA44,215 PMBTA44,215 NEXPERIA PMBTA44.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 20MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
203+0.35 EUR
272+ 0.26 EUR
380+ 0.19 EUR
401+ 0.18 EUR
Mindestbestellmenge: 203
PMBTA45,215
+1
 		PMBTA45,215 NEXPERIA PMBTA45.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Pulsed collector current: 0.5A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 35MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 783 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
242+ 0.3 EUR
341+ 0.21 EUR
379+ 0.19 EUR
Mindestbestellmenge: 193
PMBTA56-QR PMBTA56-QR NEXPERIA PMBTA56-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PMBTA56,215 PMBTA56,215 NEXPERIA PMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
835+0.086 EUR
1310+ 0.054 EUR
Mindestbestellmenge: 835
PMBTA64,215 PMBTA64,215 NEXPERIA PMBTA64.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2781 Stücke:
Lieferzeit 7-14 Tag (e)
736+0.097 EUR
910+ 0.079 EUR
1009+ 0.071 EUR
1257+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 736
PMBTA92,215 PMBTA92,215 NEXPERIA PMBTA92.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
432+ 0.17 EUR
650+ 0.11 EUR
776+ 0.092 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 250
PMBTA92,235 PMBTA92,235 NEXPERIA PMBTA92.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMCM4401UNEZ NEXPERIA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Case: WLCSP4
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 17A
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 71mΩ
Drain current: 2.7A
Drain-source voltage: 20V
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM4401UPEZ NEXPERIA PMCM4401UPE.pdf PMCM4401UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMCM4401VNEAZ NEXPERIA PMCM4401VNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3A
Pulsed drain current: 19A
Case: WLCSP4
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM4401VPEZ NEXPERIA PMCM4401VPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.5A; Idm: -16A; WLCSP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Pulsed drain current: -16A
Case: WLCSP4
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMCM4402UPEZ NEXPERIA PMCM4402UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM6501UPEZ NEXPERIA PMCM6501UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM6501VNEZ NEXPERIA PMCM6501VNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 4.6A; Idm: 29A; WLCSP6
Drain-source voltage: 12V
Drain current: 4.6A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 25mΩ
Pulsed drain current: 29A
Technology: Trench
Kind of channel: enhanced
Gate charge: 24nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM6501VPEZ NEXPERIA PMCM6501VPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6
Drain-source voltage: -12V
Drain current: -4A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: -25A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29.4nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM650CUNEZ NEXPERIA PMCM650CUNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCPB5530X,115 NEXPERIA PMCPB5530X.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMCXB1000UEZ NEXPERIA PMCXB1000UE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMCXB900UELZ NEXPERIA PMCXB900UEL.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMCXB900UEZ NEXPERIA PMCXB900UE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMD2001D,115 PMD2001D,115 NEXPERIA PMD2001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMD3001D,115 PMD3001D,115 NEXPERIA PMD3001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Semiconductor structure: common base; common emitter
Polarisation: bipolar
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
Collector-emitter voltage: 40V
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMDPB30XN,115 NEXPERIA PMDPB30XN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB30XNZ NEXPERIA PMDPB30XN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB55XP,115 NEXPERIA PMDPB55XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB56XNEAX NEXPERIA PMDPB56XNEA.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB58UPE,115 NEXPERIA PMDPB58UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB70XP,115 NEXPERIA PMDPB70XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB70XPE,115 NEXPERIA PMDPB70XPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB80XP,115 NEXPERIA PMDPB80XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB85UPE,115 NEXPERIA PMDPB85UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB95XNE2X NEXPERIA PMDPB95XNE2.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDT290UCE,115 NEXPERIA PMDT290UCE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UCEH NEXPERIA PMDT290UCE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UNE,115 NEXPERIA PMDT290UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDXB1200UPEZ NEXPERIA PMDXB1200UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB550UNEZ NEXPERIA PMDXB550UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB600UNELZ NEXPERIA PMDXB600UNEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB600UNEZ NEXPERIA PMDXB600UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMBT3904MB,315 PMBT3904MB.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT3904RAZ PMBT3904RA.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 480mW; DFN1412-6,SOT1268-1
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.48W
Case: DFN1412-6; SOT1268-1
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMBT3904VS,115 PMBT3904VS.pdf
PMBT3904VS,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMBT3906,215 PMBT3906.215.pdf
PMBT3906,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7015 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1345+0.053 EUR
2451+ 0.029 EUR
2841+ 0.025 EUR
3572+ 0.02 EUR
3788+ 0.019 EUR
Mindestbestellmenge: 1345
PMBT3906M,315 PMBT3906M.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006-3,SOT883
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006-3; SOT883
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMBT3906MB,315 PMBT3906MB.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMBT3906VS,115 PMBT3906VS.pdf
PMBT3906VS,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT3946VPN,115 PMBT3946VPN.pdf
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMBT3946YPN,115 PMBT3946YPN.pdf
PMBT3946YPN,115
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT4401,215 PMBT4401.pdf
PMBT4401,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 0.6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 250MHz
Collector-emitter voltage: 40V
Current gain: 300
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4274 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
2100+ 0.034 EUR
2325+ 0.031 EUR
3025+ 0.024 EUR
3200+ 0.022 EUR
Mindestbestellmenge: 1900
PMBT4403,215 PMBT4403.pdf
PMBT4403,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT4403YSX PMBT4403YS.pdf
PMBT4403YSX
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT5550,215 PMBT5550.pdf
PMBT5550,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 140V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5260 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1195+0.06 EUR
1330+ 0.054 EUR
1735+ 0.041 EUR
1835+ 0.039 EUR
Mindestbestellmenge: 1195
PMBT5551,215 PMBT5551.pdf
PMBT5551,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 160V
Current gain: 30...250
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBT6429,215 PMBT6429.pdf
PMBT6429,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Application: automotive industry
Collector-emitter voltage: 45V
Current gain: 1250
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 700MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBTA06-QR PMBTA06-Q.pdf
PMBTA06-QR
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PMBTA06,215 PMBTA06.pdf
PMBTA06,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1405+0.051 EUR
1640+ 0.044 EUR
2045+ 0.035 EUR
2160+ 0.033 EUR
12000+ 0.032 EUR
Mindestbestellmenge: 1405
PMBTA13,215 PMBTA13_PMBTA14.pdf
PMBTA13,215
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SOT23; TO236AB
Frequency: 125MHz
Collector-emitter voltage: 30V
Current gain: 5000...10000
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.25W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMBTA14,215 PMBTA14.215.pdf
PMBTA14,215
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2805 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
944+0.076 EUR
1069+ 0.067 EUR
1117+ 0.064 EUR
Mindestbestellmenge: 944
PMBTA42,215 PMBTA42.pdf
PMBTA42,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2315 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
264+0.27 EUR
500+ 0.14 EUR
719+ 0.1 EUR
1007+ 0.071 EUR
1200+ 0.06 EUR
1707+ 0.042 EUR
1806+ 0.04 EUR
Mindestbestellmenge: 264
PMBTA42DS,125 PMBTA42DS.pdf
PMBTA42DS,125
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Collector-emitter voltage: 300V
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMBTA44,215 PMBTA44.pdf
PMBTA44,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 20MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
203+0.35 EUR
272+ 0.26 EUR
380+ 0.19 EUR
401+ 0.18 EUR
Mindestbestellmenge: 203
PMBTA45,215 PMBTA45.pdf
PMBTA45,215
+1
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Pulsed collector current: 0.5A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 35MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 783 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
193+0.37 EUR
242+ 0.3 EUR
341+ 0.21 EUR
379+ 0.19 EUR
Mindestbestellmenge: 193
PMBTA56-QR PMBTA56-Q.pdf
PMBTA56-QR
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
PMBTA56,215 PMBTA56.pdf
PMBTA56,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
835+0.086 EUR
1310+ 0.054 EUR
Mindestbestellmenge: 835
PMBTA64,215 PMBTA64.pdf
PMBTA64,215
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2781 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
736+0.097 EUR
910+ 0.079 EUR
1009+ 0.071 EUR
1257+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 736
PMBTA92,215 PMBTA92.pdf
PMBTA92,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
432+ 0.17 EUR
650+ 0.11 EUR
776+ 0.092 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 250
PMBTA92,235 PMBTA92.pdf
PMBTA92,235
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMCM4401UNEZ
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Case: WLCSP4
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 17A
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 71mΩ
Drain current: 2.7A
Drain-source voltage: 20V
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM4401UPEZ PMCM4401UPE.pdf
Hersteller: NEXPERIA
PMCM4401UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMCM4401VNEAZ PMCM4401VNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3A
Pulsed drain current: 19A
Case: WLCSP4
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM4401VPEZ PMCM4401VPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.5A; Idm: -16A; WLCSP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Pulsed drain current: -16A
Case: WLCSP4
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMCM4402UPEZ PMCM4402UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
Anzahl je Verpackung: 9000 Stücke
Produkt ist nicht verfügbar
PMCM6501UPEZ PMCM6501UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM6501VNEZ PMCM6501VNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 4.6A; Idm: 29A; WLCSP6
Drain-source voltage: 12V
Drain current: 4.6A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 25mΩ
Pulsed drain current: 29A
Technology: Trench
Kind of channel: enhanced
Gate charge: 24nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM6501VPEZ PMCM6501VPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6
Drain-source voltage: -12V
Drain current: -4A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: -25A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29.4nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCM650CUNEZ PMCM650CUNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
PMCPB5530X,115 PMCPB5530X.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMCXB1000UEZ PMCXB1000UE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMCXB900UELZ PMCXB900UEL.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMCXB900UEZ PMCXB900UE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMD2001D,115 PMD2001D.pdf
PMD2001D,115
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMD3001D,115 PMD3001D.pdf
PMD3001D,115
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Semiconductor structure: common base; common emitter
Polarisation: bipolar
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
Collector-emitter voltage: 40V
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMDPB30XN,115 PMDPB30XN.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB30XNZ PMDPB30XN.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB55XP,115 PMDPB55XP.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB56XNEAX PMDPB56XNEA.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB58UPE,115 PMDPB58UPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB70XP,115 PMDPB70XP.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB70XPE,115 PMDPB70XPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB80XP,115 PMDPB80XP.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB85UPE,115 PMDPB85UPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDPB95XNE2X PMDPB95XNE2.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMDT290UCE,115 PMDT290UCE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UCEH PMDT290UCE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UNE,115 PMDT290UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDXB1200UPEZ PMDXB1200UPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB550UNEZ PMDXB550UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB600UNELZ PMDXB600UNEL.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMDXB600UNEZ PMDXB600UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
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