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PMCM6501UPEZ Nexperia USA Inc.
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Description: MOSFET P-CH 20V 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.35 EUR |
9000+ | 0.31 EUR |
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Technische Details PMCM6501UPEZ Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj), Power Dissipation (Max): 556mW, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V.
Weitere Produktangebote PMCM6501UPEZ nach Preis ab 0.35 EUR bis 0.93 EUR
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PMCM6501UPEZ | Hersteller : Nexperia |
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auf Bestellung 7062 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM6501UPEZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj) Power Dissipation (Max): 556mW Supplier Device Package: 6-WLCSP (1.48x0.98) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V |
auf Bestellung 12278 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM6501UPEZ | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A Drain-source voltage: -20V Drain current: -3.5A Case: WLCSP6 Polarisation: unipolar On-state resistance: 43mΩ Pulsed drain current: -22A Technology: Trench Kind of channel: enhanced Gate charge: 29nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
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PMCM6501UPEZ | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PMCM6501UPEZ | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A Drain-source voltage: -20V Drain current: -3.5A Case: WLCSP6 Polarisation: unipolar On-state resistance: 43mΩ Pulsed drain current: -22A Technology: Trench Kind of channel: enhanced Gate charge: 29nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |