PMCM4401UNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Description: MOSFET N-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9000+ | 0.17 EUR |
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Technische Details PMCM4401UNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj), Power Dissipation (Max): 400mW, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V.
Weitere Produktangebote PMCM4401UNEZ nach Preis ab 0.16 EUR bis 0.72 EUR
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PMCM4401UNEZ | Hersteller : Nexperia |
 MOSFET PMCM4401UNE/NAX000/NONE |
auf Bestellung 78945 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM4401UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj) Power Dissipation (Max): 400mW Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V |
auf Bestellung 46160 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM4401UNEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCM4401UNEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 139829 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMCM4401UNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 9nC Case: WLCSP4 Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 17A Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 71mΩ Drain current: 2.7A Drain-source voltage: 20V Anzahl je Verpackung: 9000 Stücke |
Produkt ist nicht verfügbar |
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| PMCM4401UNEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 9nC Case: WLCSP4 Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 17A Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 71mΩ Drain current: 2.7A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |