auf Bestellung 7915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.33 EUR |
| 1000+ | 0.21 EUR |
| 5000+ | 0.17 EUR |
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Technische Details PMCXB1000UEZ Nexperia
Description: MOSFET N/P-CH 30V 0.59A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.
Weitere Produktangebote PMCXB1000UEZ nach Preis ab 0.2 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMCXB1000UEZ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N/P-CH 30V 0.59A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 3095 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCXB1000UEZ | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 30V 0.59A/0.41A 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |
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| PMCXB1000UEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 590/-410mA Pulsed drain current: -1.7...2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 670mΩ/1.4Ω Mounting: SMD Gate charge: 1.05/1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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PMCXB1000UEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.59A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
Produkt ist nicht verfügbar |
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| PMCXB1000UEZ | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 590/-410mA Pulsed drain current: -1.7...2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 670mΩ/1.4Ω Mounting: SMD Gate charge: 1.05/1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |