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PMXB43UNEZ NEXPERIA PMXB43UNE.pdf PMXB43UNEZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB56ENZ NEXPERIA PMXB56EN.pdf PMXB56ENZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB65ENEZ NEXPERIA PMXB65ENE.pdf NEXP-S-A0003059383-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB65UPEZ NEXPERIA PMXB65UPE.pdf PMXB65UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB75UPEZ NEXPERIA PMXB75UPE.pdf PMXB75UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMZ1000UN,315 NEXPERIA PMZ1000UN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 480mA; Idm: 1.8A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ1200UPEYL NEXPERIA PMZ1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ130UNEYL NEXPERIA PMZ130UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ200UNEYL NEXPERIA PMZ200UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ290UNE2YL NEXPERIA PMZ290UNE2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ320UPEYL NEXPERIA PMZ320UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006-3; SOT883
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ350UPEYL NEXPERIA PMZ350UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Pulsed drain current: -2.8A
Case: DFN1006-3; SOT883
On-state resistance: 645mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9835 Stücke:
Lieferzeit 7-14 Tag (e)
368+0.19 EUR
763+ 0.094 EUR
844+ 0.085 EUR
1060+ 0.067 EUR
1122+ 0.064 EUR
Mindestbestellmenge: 368
PMZ370UNEYL NEXPERIA PMZ370UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Pulsed drain current: 3.6A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 1.16nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ390UN,315 NEXPERIA PMZ390UN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ550UNEYL NEXPERIA PMZ550UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNELYL NEXPERIA PMZ600UNEL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEYL NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEZ NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPELYL NEXPERIA PMZ950UPEL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPEYL NEXPERIA PMZ950UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB1200UPEYL NEXPERIA PMZB1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PMZB150UNEYL NEXPERIA PMZB150UNE.pdf PMZB150UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZB200UNEYL NEXPERIA PMZB200UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB290UNE2YL NEXPERIA PMZB290UNE2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7290 Stücke:
Lieferzeit 7-14 Tag (e)
675+0.11 EUR
855+ 0.084 EUR
1080+ 0.066 EUR
1140+ 0.063 EUR
5000+ 0.062 EUR
Mindestbestellmenge: 675
PMZB320UPEYL NEXPERIA PMZB320UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006B-3; SOT883B
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB350UPE,315 NEXPERIA PMZB350UPE.pdf PMZB350UPE.315 SMD P channel transistors
Produkt ist nicht verfügbar
PMZB390UNEYL NEXPERIA PMZB390UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB550UNEYL NEXPERIA PMZB550UNE.pdf PMZB550UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZB600UNELYL NEXPERIA PMZB600UNEL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB670UPE,315 NEXPERIA PMZB670UPE.pdf PMZB670UPE.315 SMD P channel transistors
Produkt ist nicht verfügbar
PMZB950UPEYL NEXPERIA PMZB950UPE.pdf PMZB950UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PNE20010ERX PNE20010ERX NEXPERIA PNE20010ERX.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123W; Ufmax: 0.93V; 1.43W
Kind of package: reel; tape
Power dissipation: 1.43W
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 200V
Max. forward voltage: 0.93V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 38A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PNS40010ER,115 PNS40010ER,115 NEXPERIA PNS40010ER.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1955 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
840+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 315
PQMD16Z NEXPERIA PQMD16.pdf PQMD16Z Complementary transistors
Produkt ist nicht verfügbar
PRTR5V0U2AX,215 PRTR5V0U2AX,215 NEXPERIA PRTR5V0U2AX.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Case: SOT143B
Mounting: SMD
Semiconductor structure: unidirectional
Breakdown voltage: 6...9V
Leakage current: 0.1µA
Type of diode: TVS array
Max. off-state voltage: 5.5V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2752 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
202+ 0.35 EUR
262+ 0.27 EUR
278+ 0.26 EUR
Mindestbestellmenge: 167
PRTR5V0U2F,115 NEXPERIA PRTR5V0U2F_PRTR5V0U2K.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4581 Stücke:
Lieferzeit 7-14 Tag (e)
198+0.36 EUR
228+ 0.31 EUR
274+ 0.26 EUR
290+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 198
PRTR5V0U2X,215 PRTR5V0U2X,215 NEXPERIA PRTR5V0U2X-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)
191+0.38 EUR
218+ 0.33 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 191
PRTR5V0U4D,125 PRTR5V0U4D,125 NEXPERIA PRTR5V0U4D.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3673 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
228+ 0.31 EUR
323+ 0.22 EUR
342+ 0.21 EUR
Mindestbestellmenge: 179
PSC1065KQ PSC1065KQ NEXPERIA PSC1065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Mounting: THT
Case: TO220-2
Leakage current: 120µA
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 2.6V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.08 EUR
19+ 3.9 EUR
23+ 3.25 EUR
24+ 3.06 EUR
1000+ 2.93 EUR
Mindestbestellmenge: 18
PSMN004-60B,118 PSMN004-60B,118 NEXPERIA PSMN004-60B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 769 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.6 EUR
23+ 3.17 EUR
26+ 2.76 EUR
28+ 2.6 EUR
800+ 2.5 EUR
Mindestbestellmenge: 20
PSMN005-75B,118 NEXPERIA PSMN005-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN008-75B,118 NEXPERIA PSMN008-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100B,118 NEXPERIA PSMN009-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+ 3.55 EUR
26+ 2.79 EUR
28+ 2.65 EUR
250+ 2.62 EUR
Mindestbestellmenge: 19
PSMN010-80YLX NEXPERIA PSMN010-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-100YSFX NEXPERIA PSMN011-100YSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-30YLC,115 NEXPERIA PSMN011-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MLX NEXPERIA PSMN011-60ML.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MSX PSMN011-60MSX NEXPERIA PSMN011-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1326 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
91+ 0.79 EUR
100+ 0.72 EUR
111+ 0.64 EUR
118+ 0.61 EUR
500+ 0.59 EUR
Mindestbestellmenge: 70
PSMN011-80YS,115 NEXPERIA PSMN011-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YLX NEXPERIA PSMN012-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60MSX NEXPERIA PSMN012-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60YS,115 PSMN012-60YS,115 NEXPERIA PSMN012-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80BS,118 NEXPERIA PSMN012-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80PS,127 PSMN012-80PS,127 NEXPERIA PSMN012-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4561 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
39+ 1.87 EUR
44+ 1.66 EUR
50+ 1.46 EUR
53+ 1.37 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 35
PSMN013-100BS,118 PSMN013-100BS,118 NEXPERIA PSMN013-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+ 1.56 EUR
53+ 1.36 EUR
56+ 1.29 EUR
800+ 1.23 EUR
Mindestbestellmenge: 41
PSMN013-100PS,127 PSMN013-100PS,127 NEXPERIA PSMN013-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100YSEX NEXPERIA PSMN013-100YSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
150+ 0.48 EUR
167+ 0.43 EUR
211+ 0.34 EUR
223+ 0.32 EUR
Mindestbestellmenge: 67
PMXB43UNEZ PMXB43UNE.pdf
Hersteller: NEXPERIA
PMXB43UNEZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB56ENZ PMXB56EN.pdf
Hersteller: NEXPERIA
PMXB56ENZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB65ENEZ PMXB65ENE.pdf NEXP-S-A0003059383-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB65UPEZ PMXB65UPE.pdf
Hersteller: NEXPERIA
PMXB65UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB75UPEZ PMXB75UPE.pdf
Hersteller: NEXPERIA
PMXB75UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMZ1000UN,315 PMZ1000UN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 480mA; Idm: 1.8A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ1200UPEYL PMZ1200UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ130UNEYL PMZ130UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ200UNEYL PMZ200UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ290UNE2YL PMZ290UNE2.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ320UPEYL PMZ320UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006-3; SOT883
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ350UPEYL PMZ350UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Pulsed drain current: -2.8A
Case: DFN1006-3; SOT883
On-state resistance: 645mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
368+0.19 EUR
763+ 0.094 EUR
844+ 0.085 EUR
1060+ 0.067 EUR
1122+ 0.064 EUR
Mindestbestellmenge: 368
PMZ370UNEYL PMZ370UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Pulsed drain current: 3.6A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 1.16nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ390UN,315 PMZ390UN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ550UNEYL PMZ550UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNELYL PMZ600UNEL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEYL PMZ600UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEZ PMZ600UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPELYL PMZ950UPEL.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPEYL PMZ950UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB1200UPEYL PMZB1200UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PMZB150UNEYL PMZB150UNE.pdf
Hersteller: NEXPERIA
PMZB150UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZB200UNEYL PMZB200UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB290UNE2YL PMZB290UNE2.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7290 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
675+0.11 EUR
855+ 0.084 EUR
1080+ 0.066 EUR
1140+ 0.063 EUR
5000+ 0.062 EUR
Mindestbestellmenge: 675
PMZB320UPEYL PMZB320UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006B-3; SOT883B
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB350UPE,315 PMZB350UPE.pdf
Hersteller: NEXPERIA
PMZB350UPE.315 SMD P channel transistors
Produkt ist nicht verfügbar
PMZB390UNEYL PMZB390UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB550UNEYL PMZB550UNE.pdf
Hersteller: NEXPERIA
PMZB550UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZB600UNELYL PMZB600UNEL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZB670UPE,315 PMZB670UPE.pdf
Hersteller: NEXPERIA
PMZB670UPE.315 SMD P channel transistors
Produkt ist nicht verfügbar
PMZB950UPEYL PMZB950UPE.pdf
Hersteller: NEXPERIA
PMZB950UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PNE20010ERX PNE20010ERX.pdf
PNE20010ERX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123W; Ufmax: 0.93V; 1.43W
Kind of package: reel; tape
Power dissipation: 1.43W
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 200V
Max. forward voltage: 0.93V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 38A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PNS40010ER,115 PNS40010ER.pdf
PNS40010ER,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1955 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
840+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 315
PQMD16Z PQMD16.pdf
Hersteller: NEXPERIA
PQMD16Z Complementary transistors
Produkt ist nicht verfügbar
PRTR5V0U2AX,215 PRTR5V0U2AX.pdf
PRTR5V0U2AX,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Case: SOT143B
Mounting: SMD
Semiconductor structure: unidirectional
Breakdown voltage: 6...9V
Leakage current: 0.1µA
Type of diode: TVS array
Max. off-state voltage: 5.5V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2752 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
202+ 0.35 EUR
262+ 0.27 EUR
278+ 0.26 EUR
Mindestbestellmenge: 167
PRTR5V0U2F,115 PRTR5V0U2F_PRTR5V0U2K.pdf
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
228+ 0.31 EUR
274+ 0.26 EUR
290+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 198
PRTR5V0U2X,215 PRTR5V0U2X-DTE.pdf
PRTR5V0U2X,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
218+ 0.33 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 191
PRTR5V0U4D,125 PRTR5V0U4D.pdf
PRTR5V0U4D,125
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3673 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
228+ 0.31 EUR
323+ 0.22 EUR
342+ 0.21 EUR
Mindestbestellmenge: 179
PSC1065KQ PSC1065K.pdf
PSC1065KQ
Hersteller: NEXPERIA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Mounting: THT
Case: TO220-2
Leakage current: 120µA
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 2.6V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.08 EUR
19+ 3.9 EUR
23+ 3.25 EUR
24+ 3.06 EUR
1000+ 2.93 EUR
Mindestbestellmenge: 18
PSMN004-60B,118 PSMN004-60B.pdf
PSMN004-60B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 769 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.6 EUR
23+ 3.17 EUR
26+ 2.76 EUR
28+ 2.6 EUR
800+ 2.5 EUR
Mindestbestellmenge: 20
PSMN005-75B,118 PSMN005-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN008-75B,118 PSMN008-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100B,118 PSMN009-100B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.93 EUR
21+ 3.55 EUR
26+ 2.79 EUR
28+ 2.65 EUR
250+ 2.62 EUR
Mindestbestellmenge: 19
PSMN010-80YLX PSMN010-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-100YSFX PSMN011-100YSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-30YLC,115 PSMN011-30YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MLX PSMN011-60ML.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MSX PSMN011-60MS.pdf
PSMN011-60MSX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1326 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
91+ 0.79 EUR
100+ 0.72 EUR
111+ 0.64 EUR
118+ 0.61 EUR
500+ 0.59 EUR
Mindestbestellmenge: 70
PSMN011-80YS,115 PSMN011-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YLX PSMN012-100YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60MSX PSMN012-60MS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60YS,115 PSMN012-60YS.pdf
PSMN012-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80BS,118 PSMN012-80BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80PS,127 PSMN012-80PS.pdf
PSMN012-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4561 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.09 EUR
39+ 1.87 EUR
44+ 1.66 EUR
50+ 1.46 EUR
53+ 1.37 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 35
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
46+ 1.56 EUR
53+ 1.36 EUR
56+ 1.29 EUR
800+ 1.23 EUR
Mindestbestellmenge: 41
PSMN013-100PS,127 PSMN013-100PS.pdf
PSMN013-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100YSEX PSMN013-100YSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30MLC,115 PSMN013-30MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
150+ 0.48 EUR
167+ 0.43 EUR
211+ 0.34 EUR
223+ 0.32 EUR
Mindestbestellmenge: 67
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