PMZB320UPEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 30V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
| 30000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZB320UPEYL Nexperia USA Inc.
Description: MOSFET P-CH 30V 1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1006B-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V.
Weitere Produktangebote PMZB320UPEYL nach Preis ab 0.1 EUR bis 0.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMZB320UPEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 1A DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V |
auf Bestellung 64532 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PMZB320UPEYL | Hersteller : Nexperia |
MOSFET PMZB320UPE/SOT883B/XQFN3 |
auf Bestellung 39026 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PMZB320UPEYL | Hersteller : NEXPERIA |
Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| PMZB320UPEYL | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A Mounting: SMD Drain current: -0.6A On-state resistance: 810mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4A Case: DFN1006B-3; SOT883B Drain-source voltage: -30V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| PMZB320UPEYL | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A Mounting: SMD Drain current: -0.6A On-state resistance: 810mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4A Case: DFN1006B-3; SOT883B Drain-source voltage: -30V |
Produkt ist nicht verfügbar |