![PSMN013-100YSEX PSMN013-100YSEX](https://static6.arrow.com/aropdfconversion/arrowimages/40e5d18affd70487398d7ee35e182af9bae7cc40/sot669_3d.jpg)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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1500+ | 1.12 EUR |
3000+ | 0.99 EUR |
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Technische Details PSMN013-100YSEX Nexperia
Description: MOSFET N-CH 100V 82A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tj), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V.
Weitere Produktangebote PSMN013-100YSEX nach Preis ab 0.97 EUR bis 2.9 EUR
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PSMN013-100YSEX | Hersteller : Nexperia |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V |
auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V |
auf Bestellung 52886 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia |
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auf Bestellung 7231 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-100YSEX | Hersteller : NEXPERIA |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-100YSEX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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PSMN013-100YSEX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Pulsed drain current: 330A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 36mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN013-100YSEX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Pulsed drain current: 330A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 36mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |