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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-80YS,115 NEXPERIA PSMN013-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-40YS,115 PSMN014-40YS,115 NEXPERIA PSMN014-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-80YLX NEXPERIA PSMN014-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100B,118 PSMN015-100B,118 NEXPERIA PSMN015-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100P,127 PSMN015-100P,127 NEXPERIA PSMN015-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
29+ 2.52 EUR
37+ 1.97 EUR
38+ 1.89 EUR
250+ 1.83 EUR
Mindestbestellmenge: 26
PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.72 EUR
50+ 1.44 EUR
73+ 0.99 EUR
77+ 0.93 EUR
500+ 0.9 EUR
Mindestbestellmenge: 42
PSMN015-60PS,127 PSMN015-60PS,127 NEXPERIA PSMN015-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
47+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 37
PSMN016-100BS,118 NEXPERIA PSMN016-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN016-100PS,127 PSMN016-100PS,127 NEXPERIA PSMN016-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.7 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.59 EUR
Mindestbestellmenge: 27
PSMN016-100YS,115 NEXPERIA PSMN016-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30BL,118 NEXPERIA PSMN017-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.1 EUR
42+ 1.7 EUR
50+ 1.43 EUR
Mindestbestellmenge: 34
PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA PSMN017-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1301 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.98 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 74
PSMN017-80BS,118 NEXPERIA PSMN017-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-80PS,127 PSMN017-80PS,127 NEXPERIA PSMN017-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
44+ 1.63 EUR
250+ 1.17 EUR
Mindestbestellmenge: 41
PSMN018-80YS,115 PSMN018-80YS,115 NEXPERIA PSMN018-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 43mΩ
Kind of package: reel; tape
Power dissipation: 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Gate charge: 26nC
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN019-100YLX NEXPERIA PSMN019-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN020-30MLCX NEXPERIA PSMN020-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN021-100YLX NEXPERIA PSMN021-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 65.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30BL,118 NEXPERIA PSMN022-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 50.99mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30PL,127 PSMN022-30PL,127 NEXPERIA PSMN022-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-100D,118 PSMN025-100D,118 NEXPERIA PSMN025-100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-80YLX NEXPERIA PSMN025-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26.5A; Idm: 150A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.5A
Pulsed drain current: 150A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 67.8mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN026-80YS,115 PSMN026-80YS,115 NEXPERIA PSMN026-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 34A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 34A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1472 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
100+ 0.72 EUR
112+ 0.64 EUR
140+ 0.51 EUR
148+ 0.48 EUR
Mindestbestellmenge: 71
PSMN027-100BS,118 NEXPERIA PSMN027-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN027-100PS,127 PSMN027-100PS,127 NEXPERIA PSMN027-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
10+ 7.15 EUR
13+ 5.51 EUR
34+ 2.1 EUR
250+ 1.29 EUR
Mindestbestellmenge: 9
PSMN028-100YS,115 NEXPERIA PSMN028-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 137A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN030-150P,127 PSMN030-150P,127 NEXPERIA PSMN030-150P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 55.5A; Idm: 222A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 55.5A
Pulsed drain current: 222A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Mounting: SMD
Pulsed drain current: 116A
Power dissipation: 56W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 49.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN034-100BS,118 NEXPERIA PSMN034-100BS.pdf PSMN034-100BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN034-100PS,127 NEXPERIA PSMN034-100PS.pdf PSMN034-100PS.127 THT N channel transistors
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.3 EUR
40+ 1.79 EUR
250+ 1.12 EUR
Mindestbestellmenge: 31
PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1418 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
94+ 0.76 EUR
105+ 0.69 EUR
128+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 66
PSMN039-100YS,115 NEXPERIA PSMN039-100YS.pdf PSMN039-100YS.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN040-100MSEX NEXPERIA PSMN040-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 29.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 91W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 121A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN041-80YLX NEXPERIA PSMN041-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 21.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN045-80YS,115 NEXPERIA PSMN045-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 24A; Idm: 86A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 24A
Pulsed drain current: 86A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN057-200B,118 NEXPERIA PSMN057-200B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN057-200P,127 PSMN057-200P,127 NEXPERIA PSMN057-200P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 729 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.79 EUR
22+ 3.4 EUR
28+ 2.63 EUR
29+ 2.49 EUR
Mindestbestellmenge: 19
PSMN059-150Y,115 NEXPERIA PSMN059-150Y.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; Idm: 129A; 113W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Pulsed drain current: 129A
Power dissipation: 113W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 27.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN069-100YS,115 NEXPERIA PSMN069-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN075-100MSEX NEXPERIA PSMN075-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 74A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 74A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 57mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R7-25YLDX PSMN0R7-25YLDX NEXPERIA PSMN0R7-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1409 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
38+ 1.93 EUR
47+ 1.54 EUR
50+ 1.45 EUR
500+ 1.43 EUR
Mindestbestellmenge: 34
PSMN0R9-25YLDX NEXPERIA PSMN0R9-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 285A; Idm: 1614A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 285A
Pulsed drain current: 1614A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.04mΩ
Mounting: SMD
Gate charge: 89.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-30ULDX NEXPERIA PSMN0R9-30ULD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 284A; Idm: 1592A
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1592A
Case: SOT1023A
Drain-source voltage: 30V
Drain current: 284A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 109nC
Technology: NextPowerS3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1448 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.76 EUR
22+ 3.4 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 20
PSMN102-200Y,115 NEXPERIA PSMN102-200Y.pdf PSMN102-200Y.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-25YLDX NEXPERIA PSMN1R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 216A; Idm: 1226A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 216A
Pulsed drain current: 1226A
Power dissipation: 160W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.43mΩ
Mounting: SMD
Gate charge: 71.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1230 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
34+ 2.16 EUR
43+ 1.7 EUR
45+ 1.6 EUR
500+ 1.59 EUR
Mindestbestellmenge: 30
PSMN1R0-30YLDX PSMN1R0-30YLDX NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 2.15mΩ
Kind of package: reel; tape
Power dissipation: 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 255A
Gate charge: 121.35nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 939 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.19 EUR
37+ 1.97 EUR
46+ 1.57 EUR
49+ 1.49 EUR
500+ 1.46 EUR
Mindestbestellmenge: 33
PSMN1R0-40SSHJ NEXPERIA PSMN1R0-40SSH.pdf PSMN1R0-40SSHJ SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-40ULDX NEXPERIA PSMN1R0-40ULD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R0-40YLDX NEXPERIA PSMN1R0-40YLD.pdf PSMN1R0-40YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-40YSHX NEXPERIA PSMN1R0-40YSH.pdf PSMN1R0-40YSHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R1-25YLC,115 NEXPERIA PSMN1R1-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.71 EUR
14+ 5.13 EUR
19+ 3.9 EUR
20+ 3.69 EUR
Mindestbestellmenge: 13
PSMN1R1-40BS,118 NEXPERIA PSMN1R1-40BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-40VLDX PSMN013-40VLD.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-60YLX PSMN013-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-80YS,115 PSMN013-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-40YS,115 PSMN014-40YS.pdf
PSMN014-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-80YLX PSMN014-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100B,118 PSMN015-100B.pdf
PSMN015-100B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100P,127 PSMN015-100P.pdf
PSMN015-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.82 EUR
29+ 2.52 EUR
37+ 1.97 EUR
38+ 1.89 EUR
250+ 1.83 EUR
Mindestbestellmenge: 26
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.72 EUR
50+ 1.44 EUR
73+ 0.99 EUR
77+ 0.93 EUR
500+ 0.9 EUR
Mindestbestellmenge: 42
PSMN015-60PS,127 PSMN015-60PS.pdf
PSMN015-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
47+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 37
PSMN016-100BS,118 PSMN016-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN016-100PS,127 PSMN016-100PS.pdf
PSMN016-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.7 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.59 EUR
Mindestbestellmenge: 27
PSMN016-100YS,115 PSMN016-100YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30BL,118 PSMN017-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.1 EUR
42+ 1.7 EUR
50+ 1.43 EUR
Mindestbestellmenge: 34
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1301 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.98 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 74
PSMN017-80BS,118 PSMN017-80BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-80PS,127 PSMN017-80PS.pdf
PSMN017-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
44+ 1.63 EUR
250+ 1.17 EUR
Mindestbestellmenge: 41
PSMN018-80YS,115 PSMN018-80YS.pdf
PSMN018-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 43mΩ
Kind of package: reel; tape
Power dissipation: 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 45A
Gate charge: 26nC
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN019-100YLX PSMN019-100YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN020-30MLCX PSMN020-30MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN021-100YLX PSMN021-100YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 65.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30BL,118 PSMN022-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 50.99mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30PL,127 PSMN022-30PL.pdf
PSMN022-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-100D,118 PSMN025-100D.pdf
PSMN025-100D,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-80YLX PSMN025-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26.5A; Idm: 150A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.5A
Pulsed drain current: 150A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 67.8mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN026-80YS,115 PSMN026-80YS.pdf
PSMN026-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 34A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 34A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1472 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
100+ 0.72 EUR
112+ 0.64 EUR
140+ 0.51 EUR
148+ 0.48 EUR
Mindestbestellmenge: 71
PSMN027-100BS,118 PSMN027-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN027-100PS,127 PSMN027-100PS.pdf
PSMN027-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
10+ 7.15 EUR
13+ 5.51 EUR
34+ 2.1 EUR
250+ 1.29 EUR
Mindestbestellmenge: 9
PSMN028-100YS,115 PSMN028-100YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 137A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN030-150P,127 PSMN030-150P.pdf
PSMN030-150P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 55.5A; Idm: 222A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 55.5A
Pulsed drain current: 222A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Mounting: SMD
Pulsed drain current: 116A
Power dissipation: 56W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 49.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN034-100BS,118 PSMN034-100BS.pdf
Hersteller: NEXPERIA
PSMN034-100BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN034-100PS,127 PSMN034-100PS.pdf
Hersteller: NEXPERIA
PSMN034-100PS.127 THT N channel transistors
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.3 EUR
40+ 1.79 EUR
250+ 1.12 EUR
Mindestbestellmenge: 31
PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1418 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
94+ 0.76 EUR
105+ 0.69 EUR
128+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 66
PSMN039-100YS,115 PSMN039-100YS.pdf
Hersteller: NEXPERIA
PSMN039-100YS.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN040-100MSEX PSMN040-100MSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 29.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 91W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 121A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN041-80YLX PSMN041-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 21.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN045-80YS,115 PSMN045-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 24A; Idm: 86A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 24A
Pulsed drain current: 86A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN057-200B,118 PSMN057-200B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN057-200P,127 PSMN057-200P.pdf
PSMN057-200P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 729 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.79 EUR
22+ 3.4 EUR
28+ 2.63 EUR
29+ 2.49 EUR
Mindestbestellmenge: 19
PSMN059-150Y,115 PSMN059-150Y.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; Idm: 129A; 113W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Pulsed drain current: 129A
Power dissipation: 113W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 27.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN069-100YS,115 PSMN069-100YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN075-100MSEX PSMN075-100MSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 74A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 74A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 57mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R7-25YLDX PSMN0R7-25YLD.pdf
PSMN0R7-25YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1409 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.14 EUR
38+ 1.93 EUR
47+ 1.54 EUR
50+ 1.45 EUR
500+ 1.43 EUR
Mindestbestellmenge: 34
PSMN0R9-25YLDX PSMN0R9-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 285A; Idm: 1614A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 285A
Pulsed drain current: 1614A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.04mΩ
Mounting: SMD
Gate charge: 89.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-30ULDX PSMN0R9-30ULD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 284A; Idm: 1592A
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1592A
Case: SOT1023A
Drain-source voltage: 30V
Drain current: 284A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 109nC
Technology: NextPowerS3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1448 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.76 EUR
22+ 3.4 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 20
PSMN102-200Y,115 PSMN102-200Y.pdf
Hersteller: NEXPERIA
PSMN102-200Y.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-25YLDX PSMN1R0-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 216A; Idm: 1226A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 216A
Pulsed drain current: 1226A
Power dissipation: 160W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.43mΩ
Mounting: SMD
Gate charge: 71.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R0-30YLC,115 PSMN1R0-30YLD.pdf
PSMN1R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1230 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.4 EUR
34+ 2.16 EUR
43+ 1.7 EUR
45+ 1.6 EUR
500+ 1.59 EUR
Mindestbestellmenge: 30
PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 2.15mΩ
Kind of package: reel; tape
Power dissipation: 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 255A
Gate charge: 121.35nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 939 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.19 EUR
37+ 1.97 EUR
46+ 1.57 EUR
49+ 1.49 EUR
500+ 1.46 EUR
Mindestbestellmenge: 33
PSMN1R0-40SSHJ PSMN1R0-40SSH.pdf
Hersteller: NEXPERIA
PSMN1R0-40SSHJ SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-40ULDX PSMN1R0-40ULD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
Hersteller: NEXPERIA
PSMN1R0-40YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R0-40YSHX PSMN1R0-40YSH.pdf
Hersteller: NEXPERIA
PSMN1R0-40YSHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.71 EUR
14+ 5.13 EUR
19+ 3.9 EUR
20+ 3.69 EUR
Mindestbestellmenge: 13
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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