![PSMN022-30BL,118 PSMN022-30BL,118](https://static6.arrow.com/aropdfconversion/arrowimages/9f20d59391c6a60c7f10d747a6029a1d99970516/sot404_3d.jpg)
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
393+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN022-30BL,118 Nexperia
Description: MOSFET N-CH 30V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V.
Weitere Produktangebote PSMN022-30BL,118
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PSMN022-30BL,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 125A Power dissipation: 41W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 50.99mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
PSMN022-30BL,118 | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
PSMN022-30BL,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V |
Produkt ist nicht verfügbar |
|
![]() |
PSMN022-30BL,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V |
Produkt ist nicht verfügbar |
|
![]() |
PSMN022-30BL,118 | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|
PSMN022-30BL,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 125A Power dissipation: 41W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 50.99mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |