![PSMN1R1-25YLC,115 PSMN1R1-25YLC,115](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2228/MFG_LFPAK56_POWER-SO8_SOT669.jpg)
PSMN1R1-25YLC,115 Nexperia USA Inc.
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Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.32 EUR |
3000+ | 1.25 EUR |
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Technische Details PSMN1R1-25YLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V.
Weitere Produktangebote PSMN1R1-25YLC,115 nach Preis ab 1.17 EUR bis 2.78 EUR
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PSMN1R1-25YLC,115 | Hersteller : Nexperia |
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auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R1-25YLC,115 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V |
auf Bestellung 4311 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R1-25YLC,115 | Hersteller : NEXPERIA |
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auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R1-25YLC,115 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 1318A Power dissipation: 215W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN1R1-25YLC,115 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 1318A Power dissipation: 215W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |