PSMN1R0-40YSHX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 290A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 333W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
Description: MOSFET N-CH 40V 290A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 333W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 2.84 EUR |
3000+ | 2.68 EUR |
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Technische Details PSMN1R0-40YSHX Nexperia USA Inc.
Description: MOSFET N-CH 40V 290A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 290A (Ta), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 333W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V.
Weitere Produktangebote PSMN1R0-40YSHX nach Preis ab 3.06 EUR bis 5.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PSMN1R0-40YSHX | Hersteller : Nexperia | MOSFET PSMN1R0-40YSH/SOT1023/4 LEADS |
auf Bestellung 1419 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R0-40YSHX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 290A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 333W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V |
auf Bestellung 5856 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R0-40YSHX | Hersteller : NEXPERIA | Trans MOSFET N-CH 40V 290A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN1R0-40YSHX | Hersteller : NEXPERIA | PSMN1R0-40YSHX SMD N channel transistors |
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