PMN48XPAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
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Technische Details PMN48XPAX Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 530mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Weitere Produktangebote PMN48XPAX nach Preis ab 0.22 EUR bis 0.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PMN48XPAX | Hersteller : Nexperia | MOSFET PMN48XPA/SOT457/SC-74 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN48XPAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.1A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V Power Dissipation (Max): 530mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN48XPAX | Hersteller : NEXPERIA | Trans MOSFET P-CH 20V 4.1A Automotive 6-Pin TSOP |
Produkt ist nicht verfügbar |
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PMN48XPAX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN48XPAX | Hersteller : NXP Semiconductors |
Description: NEXPERIA PMN48XP - 20V, P-CHANNE Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V Power Dissipation (Max): 530mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMN48XPAX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.5A; Idm: -20A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 80mΩ Polarisation: unipolar Drain current: -2.5A Drain-source voltage: -20V Gate charge: 13nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A |
Produkt ist nicht verfügbar |