PSMN8R5-40MLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.63 EUR |
| 3000+ | 0.59 EUR |
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Technische Details PSMN8R5-40MLDX Nexperia USA Inc.
Description: MOSFET N-CH 40V 60A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 20 V.
Weitere Produktangebote PSMN8R5-40MLDX nach Preis ab 0.53 EUR bis 1.43 EUR
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PSMN8R5-40MLDX | Hersteller : Nexperia |
MOSFET PSMN8R5-40MLD/SOT1210/mLFPAK |
auf Bestellung 4409 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R5-40MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 60A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R5-40MLDX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 60A 8-Pin LFPAK EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN8R5-40MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Mounting: SMD Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 42A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN8R5-40MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Mounting: SMD Case: LFPAK33; SOT1210 Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 239A Drain-source voltage: 40V Drain current: 42A On-state resistance: 21.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |