auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.46 EUR |
| 1500+ | 0.39 EUR |
| 3000+ | 0.33 EUR |
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Technische Details PSMN6R1-25MLDX Nexperia
Description: MOSFET N-CH 25V 60A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V.
Weitere Produktangebote PSMN6R1-25MLDX nach Preis ab 0.46 EUR bis 0.92 EUR
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PSMN6R1-25MLDX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 60A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V |
auf Bestellung 1516 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R1-25MLDX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 25V 60A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| PSMN6R1-25MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 235A Power dissipation: 42W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.98mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN6R1-25MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 60A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V |
Produkt ist nicht verfügbar |
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| PSMN6R1-25MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 235A Power dissipation: 42W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.98mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |