PSMN9R0-25MLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 25V 55A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 1.07 EUR |
| 20+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.54 EUR |
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Technische Details PSMN9R0-25MLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 25V 55A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V.
Weitere Produktangebote PSMN9R0-25MLC,115 nach Preis ab 0.25 EUR bis 1.08 EUR
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PSMN9R0-25MLC,115 | Hersteller : Nexperia |
MOSFETs PSMN9R0-25MLC/SOT1210/mLFPAK |
auf Bestellung 1273 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN9R0-25MLC,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 25V 55A 8-Pin LFPAK EP T/R |
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| PSMN9R0-25MLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 55A; Idm: 219A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 55A Pulsed drain current: 219A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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PSMN9R0-25MLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 55A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V |
Produkt ist nicht verfügbar |
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| PSMN9R0-25MLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 55A; Idm: 219A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 55A Pulsed drain current: 219A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |