PSMN9R5-30YLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 44A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.47 EUR |
| 3000+ | 0.42 EUR |
| 7500+ | 0.39 EUR |
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Technische Details PSMN9R5-30YLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 44A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V.
Weitere Produktangebote PSMN9R5-30YLC,115 nach Preis ab 0.36 EUR bis 1.09 EUR
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PSMN9R5-30YLC,115 | Hersteller : Nexperia |
MOSFET PSMN9R5-30YLC/SOT669/LFPAK |
auf Bestellung 1198 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN9R5-30YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 44A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V |
auf Bestellung 11676 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN9R5-30YLC,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 44A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| PSMN9R5-30YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 44A; Idm: 177A; 34W Mounting: SMD Power dissipation: 34W Drain-source voltage: 30V Drain current: 44A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 177A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN9R5-30YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 44A; Idm: 177A; 34W Mounting: SMD Power dissipation: 34W Drain-source voltage: 30V Drain current: 44A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 177A |
Produkt ist nicht verfügbar |