PSMN6R5-80PS,127 NEXPERIA
Hersteller: NEXPERIACategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Power dissipation: 210W
Polarisation: unipolar
Kind of package: tube
Gate charge: 71nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 470A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.99 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.23 EUR |
| 1000+ | 2.14 EUR |
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Technische Details PSMN6R5-80PS,127 NEXPERIA
Description: MOSFET N-CH 80V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V.
Weitere Produktangebote PSMN6R5-80PS,127 nach Preis ab 1.93 EUR bis 4.47 EUR
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PSMN6R5-80PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W Power dissipation: 210W Polarisation: unipolar Kind of package: tube Gate charge: 71nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 470A Mounting: THT Case: SOT78; TO220AB Drain-source voltage: 80V Drain current: 100A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN6R5-80PS,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R5-80PS,127 | Hersteller : Nexperia |
MOSFET PSMN6R5-80PS/SOT78/SIL3P |
auf Bestellung 5290 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R5-80PS,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220AB Rail |
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