auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.06 EUR |
10+ | 0.9 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1500+ | 0.37 EUR |
3000+ | 0.33 EUR |
9000+ | 0.31 EUR |
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Technische Details PSMN6R0-25YLDX Nexperia
Description: MOSFET N-CH 25V 61A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V.
Weitere Produktangebote PSMN6R0-25YLDX
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PSMN6R0-25YLDX | Hersteller : Nexperia | Trans MOSFET N-CH 25V 61A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN6R0-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 61A Pulsed drain current: 244A Power dissipation: 43W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.29mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN6R0-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
Produkt ist nicht verfügbar |
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PSMN6R0-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
Produkt ist nicht verfügbar |
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PSMN6R0-25YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 61A Pulsed drain current: 244A Power dissipation: 43W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.29mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |