Produkte > SIH
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| SIH-34ST3FL | Rohm Semiconductor | Description: INFRARED EMITTER | Produkt ist nicht verfügbar | |||||||||||||||
| SIH-34ST3FM | Rohm Semiconductor | Description: INFRARED EMITTER | Produkt ist nicht verfügbar | |||||||||||||||
| SIH-34ST3FN | Rohm Semiconductor | Description: INFRARED EMITTER | Produkt ist nicht verfügbar | |||||||||||||||
| SIH-34ST3FP | Rohm Semiconductor | Description: INFRARED EMITTER | Produkt ist nicht verfügbar | |||||||||||||||
| SIH2131 | auf Bestellung 140 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH2131X01 | auf Bestellung 162 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH2131X01-XO | auf Bestellung 6487 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH2131X01-XOBL | auf Bestellung 36 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH2915 | auf Bestellung 338 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH2985B01-SO | auf Bestellung 193 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH32A-101 | auf Bestellung 545 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH34ST3F | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH42-101 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH42-151 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH42-331 | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIH42-4R7 | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHA100N60E-GE3 | VISHAY | Description: VISHAY - SIHA100N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 30 A, 0.086 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.086ohm SVHC: To Be Advised | auf Bestellung 833 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA100N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA100N60E-GE3 | VISHAY | SIHA100N60E-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA100N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V | auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA100N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA105N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V | auf Bestellung 1033 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA105N60EF-GE3 | Vishay / Siliconix | MOSFETs E Series Pwr MOSFET w/Fast Body Diode | auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA105N60EF-GE3 | VISHAY | Description: VISHAY - SIHA105N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.088 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 35W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF IV Gen productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.088ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.088ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA105N60EF-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80AE-GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 800V TO-220FP | auf Bestellung 2733 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA11N80AE-GE3 | VISHAY | Description: VISHAY - SIHA11N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.391 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 31W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.391ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA11N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 42nC Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 42nC Pulsed drain current: 22A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80AE-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80AE-GE3 | VISHAY | Description: VISHAY - SIHA11N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.391 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 31W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.391ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA11N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 391 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA11N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA11N80E-GE3 | VISHAY | Description: VISHAY - SIHA11N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.38 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm SVHC: To Be Advised | auf Bestellung 905 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA11N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA11N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V | auf Bestellung 1081 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA11N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 1061 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA11N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 88nC Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA11N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 88nC Pulsed drain current: 32A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA120N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 25A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA120N60E-GE3 | Vishay Semiconductors | MOSFETs 650V Vds; 30V Vgs TO-220 | auf Bestellung 1149 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA120N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA120N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA120N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab ) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF | Vishay | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: tube Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 7A On-state resistance: 0.125Ω | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V | auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA125N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | Vishay Semiconductors | MOSFETs TO220 600V 11A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA125N60EF-GE3 | VISHAY | Description: VISHAY - SIHA125N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 11 A, 0.109 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.109ohm SVHC: To Be Advised | auf Bestellung 918 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA125N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: tube Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 7A On-state resistance: 0.125Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N50E-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 10.5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V | auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N50E-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N50E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 32W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N50E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 32W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N50E-E3 | Vishay | Trans MOSFET N-CH 500V 10.5A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N50E-GE3 | Vishay / Siliconix | MOSFETs TO220 500V 10.5A N-CH | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V | auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | auf Bestellung 923 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N60E-E3 | VISHAY | Description: VISHAY - SIHA12N60E-E3 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.32 ohm, TO-220F, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220F Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.32ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA12N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 12A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA12N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA12N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA14N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA14N60E-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 13A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA14N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 13A N-CH MOSFET | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA14N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA150N60E-GE3 | Vishay / Siliconix | MOSFETs 600Vds 30V Vgs TO-220 | auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA150N60E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET THIN-LEAD Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA155N60EF | Vishay / Siliconix | MOSFET E Series Power MOSFET Thin-Lead TO-220 FULLPAK, 157 mohm a. 10V | auf Bestellung 50 Stücke: Lieferzeit 375-379 Tag (e) |
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| SIHA155N60EF-GE3 | Vishay / Siliconix | MOSFETs E Series Power MOSFET Thin-Lead TO-220 FULLPAK, 157 mohm a. 10V | auf Bestellung 2529 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA155N60EF-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET THIN-LEAD Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V | auf Bestellung 1845 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N50E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N50E-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 14.5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V | auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N50E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N50E-E3 | Vishay | Trans MOSFET N-CH 500V 14.5A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N50E-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N50E-GE3 | Vishay / Siliconix | MOSFETs TO220 500V 14.5A N-CH MOSFET | auf Bestellung 944 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| SIHA15N60E-E3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N60E-E3 | VISHAY | Description: VISHAY - SIHA15N60E-E3 - MOSFET, N CHANNEL, 600V, 15A, TO-220F Transistormontage: Through Hole Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 15 Qualifikation: - Verlustleistung Pd: 34 Gate-Source-Schwellenspannung, max.: 4 Verlustleistung: 34 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: N Channel Kanaltyp: N Channel Betriebswiderstand, Rds(on): 0.23 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.23 SVHC: Lead | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N60E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 478 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIHA15N60E-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA15N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N60E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 15A N-CH MOSFET | auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 812 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP | auf Bestellung 971 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA15N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP Tube | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA15N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 53nC Pulsed drain current: 29A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V | auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 53nC Pulsed drain current: 29A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AE-GE3 | VISHAY | Description: VISHAY - SIHA15N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 6 A, 0.304 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.304ohm SVHC: To Be Advised | auf Bestellung 946 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA15N80AE-GE3 | Vishay / Siliconix | MOSFETs TO220 800V 6A N-CH MOSFET | auf Bestellung 3919 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N80AEF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V | auf Bestellung 931 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA15N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 54nC Pulsed drain current: 28A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AEF-GE3 | Vishay | Trans MOSFET N-CH 800V 6A Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AEF-GE3 | Vishay | MOSFETs TO220 800V 6A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA15N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 54nC Pulsed drain current: 28A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AE-GE3 | Vishay / Siliconix | MOSFETs TO220 800V 7A N-CH MOSFET | auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AE-GE3 | VISHAY | Description: VISHAY - SIHA17N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7 A, 0.25 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm SVHC: To Be Advised | auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA17N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-220FP | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA17N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AEF | Vishay | Trans MOSFET N-CH 800V 6.5A | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA17N80AEF | Vishay | Trans MOSFET N-CH 800V 6.5A | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA17N80AEF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80AEF-GE3 | Vishay | Trans MOSFET N-CH 800V 6.5A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 32A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AEF-GE3 | Vishay | MOSFETs TO220 800V 6.5A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 32A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80AEF-GE3 | VISHAY | Description: VISHAY - SIHA17N80AEF-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 6.5 A, 0.263 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 34W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.263ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.263ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA17N80E-E3 | Vishay | SIHA17N80E-E3 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80E-E3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80E-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 800V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80E-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 45A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 45A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80E-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA17N80E-GE3 | VISHAY | Description: VISHAY - SIHA17N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 15 A, 0.25 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm SVHC: To Be Advised | auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA17N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA17N80E-GE3 | Vishay / Siliconix | MOSFETs TO220 800V 15A N-CH MOSFET | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA180N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA180N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 1186 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA180N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA180N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA180N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF | Vishay | Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF-GE3 | VISHAY | Description: VISHAY - SIHA186N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 8.4 A, 0.168 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 8.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.168ohm SVHC: To Be Advised | auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA186N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 8.4A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA186N60EF-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 8.4A N-CH MOSFET | auf Bestellung 1540 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA18N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 933 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA18N60E-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA18N60E-E3 | Vishay | EL Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA18N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 18A N-CH MOSFET | auf Bestellung 872 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA18N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA18N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA20N50E-E3 | Vishay | Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA20N50E-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 19A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA20N50E-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA20N50E-GE3 | Vishay | Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA20N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA20N50E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA20N50E-GE3 | Vishay / Siliconix | MOSFETs TO220 500V 19A N-CH MOSFET | auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA20N50E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA20N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 1048 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N60EF-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N60EF-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N60EF-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 9A N-CH MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 143-147 Tag (e) |
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| SIHA21N60EF-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V | auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N65EF-E3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N65EF-E3 | Vishay Siliconix | Description: MOSFET N-CH 650V 21A TO220 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N65EF-E3 | Vishay | POWER MOSFET WITH FAST BODY DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N65EF-E3 | VISHAY | SIHA21N65EF-E3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N65EF-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N65EF-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 600V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N65EF-GE3 | VISHAY | Description: VISHAY - SIHA21N65EF-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 21 A, 0.15 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA21N65EF-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N80AE-GE3 | Vishay / Siliconix | MOSFETs TO220 800V 7.5A N-CH MOSFET | auf Bestellung 869 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N80AE-GE3 | VISHAY | Description: VISHAY - SIHA21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7.5 A, 0.205 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.205ohm SVHC: To Be Advised | auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA21N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 7.5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V | auf Bestellung 1001 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA21N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 33W Gate charge: 71nC Pulsed drain current: 37A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N80AEF-GE3 | Vishay | Trans MOSFET N-CH 800V 7A Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N80AEF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 33W Gate charge: 71nC Pulsed drain current: 37A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N80AEF-GE3 | Vishay | MOSFETs TO220 800V 7A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA21N80AEF-GE3 | VISHAY | Description: VISHAY - SIHA21N80AEF-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7 A, 0.22 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1043 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA21N80AEF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V | auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA22N60AE-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 634 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA22N60AE-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60AE-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60AE-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 8A N-CH MOSFET | auf Bestellung 1792 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 49A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60AE-GE3 | VISHAY | Description: VISHAY - SIHA22N60AE-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.156 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.156ohm SVHC: To Be Advised | auf Bestellung 781 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA22N60AE-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V | auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 49A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60AE-GE3 | Vishay | E Series Power MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA22N60AEL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60AEL-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 1558 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60E-E3 | Vishay | Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60E-GE3 | Vishay | Trans MOSFET N-CH Si 600V 221A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60E-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 8A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EF | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220FP | auf Bestellung 4691 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA22N60EF | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220FP | auf Bestellung 4691 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA22N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V | auf Bestellung 929 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60EF-GE3 | VISHAY | Description: VISHAY - SIHA22N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 19 A, 0.158 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.158ohm SVHC: To Be Advised | auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA22N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EF-GE3 | Vishay / Siliconix | MOSFETs Nch 600V Vds 30V Vgs TO-220; w/diode | auf Bestellung 1283 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EL-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EL-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EL-GE3 | Vishay | EL Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EL-GE3 | Vishay Siliconix | Description: N-CHANNEL600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA22N60EL-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 21A N-CH MOSFET | auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA22N60EL-GE3 | Vishay Siliconix | Description: N-CHANNEL600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V | auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA240N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA240N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds; +/-30V Vgs TO-220 FULLPAK | auf Bestellung 776 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA240N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA240N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA240N60E-GE3 | VISHAY | Description: VISHAY - SIHA240N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.208 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 12 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 31 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 31 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: E Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.208 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.208 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA240N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA240N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA240N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA24N65EF-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 650V 24A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N65EF-E3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA24N65EF-E3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N65EF-GE3 | VISHAY | Description: VISHAY - SIHA24N65EF-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.13 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: To Be Advised | auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA24N65EF-GE3 | Vishay / Siliconix | MOSFETs TO220 650V 10A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N65EF-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V | auf Bestellung 1769 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA24N65EF-GE3 | VISHAY | SIHA24N65EF-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N65EF-GE3 | Vishay | E Series Power MOSFET with Fast Body Diode | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N80AE-GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | auf Bestellung 861 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA24N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V | auf Bestellung 752 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA24N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 51A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 51A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 9A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA24N80AE-GE3 | VISHAY | Description: VISHAY - SIHA24N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 9 A, 0.16 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.16ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 855 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA25N50E-E3 | Vishay | Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-220 FULLPAK Thin Lead | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA25N50E-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHA25N50E-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 26A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA25N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V | auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA25N50E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA25N50E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA25N50E-GE3 | Vishay / Siliconix | MOSFETs TO220 500V 26A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA25N50E-GE3 | Vishay Siliconix | Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA25N50E-GE3 | VISHAY | Description: VISHAY - SIHA25N50E-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 26 A, 0.125 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 1003 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA25N50E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA25N60EFL-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 25A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA25N60EFL-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA25N60EFL-GE3 | VISHAY | Description: VISHAY - SIHA25N60EFL-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.127 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.127ohm SVHC: To Be Advised | auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA25N60EFL-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA25N60EFL-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 25A N-CH MOSFET | auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA25N60EFL-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V | auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA2N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA2N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 2.8A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA2N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 2.8A TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA2N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 29W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA2N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 29W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA2N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 2.8A TO220 Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA30N60AEL-GE3 | Vishay | SIHA30N60AEL-GE3 Vishay MOSFETs Transistor N-CH 600V 28A 3-Pin(3+Tab) TO-220 FULLPAK Thin Lead - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA30N60AEL-GE3 | Vishay | SIHA30N60AEL-GE3 Vishay MOSFETs Transistor N-CH 600V 28A 3-Pin(3+Tab) TO-220 FULLPAK Thin Lead - Arrow.com | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA30N60AEL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 28A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA30N60AEL-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA30N60AEL-GE3 | VISHAY | Description: VISHAY - SIHA30N60AEL-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 28 A, 0.105 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 28 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 39 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: EL Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.105 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA4N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 4.3A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA4N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA4N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA4N80E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA4N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA5N80AE-GE3 | VISHAY | Description: VISHAY - SIHA5N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 3 A, 1.17 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.17ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 893 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA5N80AE-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET THIN-LEAD Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V | auf Bestellung 328 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA5N80AE-GE3 | Vishay / Siliconix | MOSFETs TO220 800V 3A E SERIES | auf Bestellung 1870 Stücke: Lieferzeit 136-140 Tag (e) |
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| SIHA5N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 7A; 29W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 16.5nC Pulsed drain current: 7A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA5N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 7A; 29W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 16.5nC Pulsed drain current: 7A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA690N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 4.3A TO220 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA690N60E-GE3 | Vishay Semiconductors | MOSFETs TO220 600V 4.3A N-CH MOSFET | auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA690N60E-GE3 | VISHAY | SIHA690N60E-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA690N60E-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N65E-E3 | Vishay | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP | auf Bestellung 984 Stücke: Lieferzeit 14-21 Tag (e) |
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| SiHA6N65E-E3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHA6N65E-E3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N65E-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA6N65E-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA6N65E-GE3 | Vishay / Siliconix | MOSFETs TO220 650V 7A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80AE-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80AE-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 800V TO-220FP | auf Bestellung 1438 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA6N80AE-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V | auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA6N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 5A TO220 Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V | auf Bestellung 1910 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHA6N80AE-GE3 | VISHAY | Description: VISHAY - SIHA6N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 0.826 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.826ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHA6N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 5.4A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHA6N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) TO-220FP | auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB053N60E-GE3 | Vishay | MOSFETs TO263 600V 47A N-CH MOSFET | auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB053N60E-GE3 | VISHAY | Description: VISHAY - SIHB053N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.047 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB053N60E-GE3 | VISHAY | SIHB053N60E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB053N60E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V | auf Bestellung 1005 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB053N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 47A Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB055N60EF-GE3 | VISHAY | Description: VISHAY - SIHB055N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 46 A, 0.048 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 46A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: EF Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 634 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB055N60EF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V | auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB055N60EF-GE3 | Vishay | Power MOSFET With Fast Body Diode | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB055N60EF-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 600V | auf Bestellung 1332 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB065N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W Drain-source voltage: 600V Drain current: 25A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Gate charge: 74nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Mounting: SMD Case: D2PAK; TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB065N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W Drain-source voltage: 600V Drain current: 25A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Gate charge: 74nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Mounting: SMD Case: D2PAK; TO263 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB065N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 40A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB065N60E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | auf Bestellung 9917 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB065N60E-GE3 | VISHAY | Description: VISHAY - SIHB065N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 40 A, 0.057 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.057ohm SVHC: To Be Advised | auf Bestellung 2849 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB065N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 40A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB065N60E-T1-GE3 | Vishay | MOSFETs TO263 600V 40A N-CH MOSFET | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB068N60EF | Vishay | Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | VISHAY | Description: VISHAY - SIHB068N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 41 A, 0.059 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.059ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1997 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB068N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 41A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V | auf Bestellung 4073 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W Mounting: SMD Drain-source voltage: 600V Drain current: 26A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 115A Case: D2PAK; TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | Vishay Semiconductors | MOSFETs TO263 600V 41A N-CH MOSFET | auf Bestellung 3787 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W Mounting: SMD Drain-source voltage: 600V Drain current: 26A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 115A Case: D2PAK; TO263 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB080N60E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V | auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB080N60E-GE3 | Vishay Semiconductors | MOSFETs E Series Power MOSFET, 80mO 10V | auf Bestellung 4338 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB080N60E-GE3 | VISHAY | Description: VISHAY - SIHB080N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 35 A, 0.07 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 227W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: To Be Advised | auf Bestellung 1938 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB085N60EF-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB085N60EF-GE3 | Vishay / Siliconix | MOSFETs 600Vds 30V Vgs TO-263 | auf Bestellung 894 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB100N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V | auf Bestellung 1004 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB100N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB100N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB100N60E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds; 30V Vgs D2PAK (TO-263) | auf Bestellung 1161 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB100N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB100N65E-GE3 | Vishay | MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB105N60EF-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB105N60EF-GE3 | Vishay | Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB105N60EF-GE3 | VISHAY | Description: VISHAY - SIHB105N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.088 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 208W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 208W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: EF IV Gen productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.088ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.088ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 6930 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB105N60EF-GE3 | Vishay / Siliconix | MOSFETs EF Series Pwr MOSFET w/Fast Body Diode | auf Bestellung 8103 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB105N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V | auf Bestellung 5691 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB10N40D-GE3 | Vishay / Siliconix | MOSFETs 400V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 2914 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB10N40D-GE3 | Vishay Siliconix | Description: MOSFET N-CH 400V 10A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 42nC Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 8A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 972 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB11N80AE-GE3 | VISHAY | Description: VISHAY - SIHB11N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.391 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 78W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.391ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.391ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB11N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB11N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 42nC Pulsed drain current: 22A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80AE-GE3 | Vishay / Siliconix | MOSFETs TO263 800V 8A N-CH MOSFET | auf Bestellung 1124 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB11N80E-GE3 | VISHAY | Description: VISHAY - SIHB11N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.38 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm SVHC: To Be Advised | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB11N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 88nC Pulsed drain current: 32A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80E-GE3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB11N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 88nC Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB11N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 12A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB11N80E-GE3 | VISHAY | Description: VISHAY - SIHB11N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.38 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm SVHC: To Be Advised | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB120N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB120N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | auf Bestellung 906 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB120N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 25A Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB120N60E-T1-GE3 | VISHAY | Description: VISHAY - SIHB120N60E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.104 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.104ohm SVHC: To Be Advised | auf Bestellung 1584 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB120N60E-T1-GE3 | Vishay / Siliconix | MOSFETs TO263 600V 25A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T1-GE3 | VISHAY | Description: VISHAY - SIHB120N60E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.104 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.104ohm SVHC: To Be Advised | auf Bestellung 1582 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB120N60E-T5-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T5-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T5-GE3 | Vishay / Siliconix | MOSFETs TO263 600V 25A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T5-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB120N60E-T5-GE3 | VISHAY | Description: VISHAY - SIHB120N60E-T5-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.104 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.104ohm SVHC: To Be Advised | auf Bestellung 1544 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB120N60E-T5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB120N60E-T5-GE3 | VISHAY | Description: VISHAY - SIHB120N60E-T5-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.104 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.104ohm SVHC: To Be Advised | auf Bestellung 1544 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB125N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB125N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V | auf Bestellung 2720 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB125N60EF-GE3 | VISHAY | Description: VISHAY - SIHB125N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.109 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.109ohm SVHC: To Be Advised | auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB125N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.125Ω | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB125N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.125Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB125N60EF-GE3 | Vishay Semiconductors | MOSFETs TO263 600V 25A N-CH MOSFET | auf Bestellung 821 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB125N65E-GE3 | Vishay | MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB12N50C-E3 | Vishay / Siliconix | MOSFETs N-Channel 500V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N50C-E3 | Vishay | Trans MOSFET N-CH Si 500V 12A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N50C-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N50E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 10.5A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N50E-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 1039 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 5153 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB12N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB12N60E-GE3 | VISHAY | Description: VISHAY - SIHB12N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.32 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 147W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.32ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 734 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB12N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB12N60E-GE3-X | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET1-GE3 | Vishay / Siliconix | MOSFETs N-Channel 600V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET1-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET5-GE3 | Vishay / Siliconix | MOSFETs N-Channel 600V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N60ET5-GE3 | Vishay | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 28A Gate charge: 70nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 28A Gate charge: 70nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB12N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB12N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 12A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V | auf Bestellung 675 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB150N60E-GE3 | Vishay / Siliconix | MOSFETs E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V | auf Bestellung 1777 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB150N60E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V | auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB155N60EF-GE3 | Vishay | MOSFETs EF Series Power MOSFET D2PAK | auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB15N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N50E-GE3 | VISHAY | Description: VISHAY - SIHB15N50E-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 14.5 A, 0.243 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 14.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.243ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1246 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB15N50E-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N50E-GE3 | Vishay | Trans MOSFET N-CH 500V 14.5A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N50E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 14.5A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N50E-GE3 | VISHAY | Description: VISHAY - SIHB15N50E-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 14.5 A, 0.243 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 14.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 156W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.243ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.243ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1246 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB15N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N60E-E3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 15A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 | auf Bestellung 1347 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB15N60E-GE3 | VISHAY | Description: VISHAY - SIHB15N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 15 A, 0.23 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 2662 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB15N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB15N60E-GE3-X | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 15A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N65E-GE3 | VISHAY | Description: VISHAY - SIHB15N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.23 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm SVHC: To Be Advised | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB15N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB15N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 13A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V | auf Bestellung 1065 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB15N80AE-GE3 | Vishay / Siliconix | MOSFETs TO263 800V 13A N-CH MOSFET | auf Bestellung 1401 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB16N50C-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 16A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB16N50C-E3 | Vishay Semiconductors | MOSFET N-Channel 500V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB16N50C-E3 | Vishay | Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 15A 3-Pin(2+Tab) D2PAK | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB17N80AE-GE3 | VISHAY | Description: VISHAY - SIHB17N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 15 A, 0.25 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 179W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.25ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB17N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V | auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB17N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80AE-GE3 | Vishay / Siliconix | MOSFETs TO263 800V 15A N-CH MOSFET | auf Bestellung 9878 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB17N80AE-T1-GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80AE-T1-GE3 | Vishay | SIHB17N80AE-T1-GE3 | auf Bestellung 11200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB17N80E-GE3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 7459 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB17N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 15A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB17N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80E-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80E-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB17N80E-T1-GE3 | Vishay / Siliconix | MOSFETs E Series Power | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB180N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB180N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB180N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB180N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB180N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK | auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB180N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB186N60EF-GE3 | VISHAY | Description: VISHAY - SIHB186N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 8.4 A, 0.168 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 8.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.168ohm SVHC: To Be Advised | auf Bestellung 1364 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB186N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 8.4A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V | auf Bestellung 3284 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB186N60EF-GE3 | Vishay / Siliconix | MOSFETs TO263 600V 8.4A N-CH MOSFET | auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB18N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 18A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB18N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB18N60E-GE3 | Vishay | EL Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB190N65E-GE3 | Vishay | MOSFETs | auf Bestellung 980 Stücke: Lieferzeit 143-147 Tag (e) |
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| SIHB20N50E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 19A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | auf Bestellung 2422 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB20N50E-GE3 | Vishay | Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB20N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB20N50E-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB20N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB20N50E-T1-GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 84nC Pulsed drain current: 53A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate charge: 84nC Pulsed drain current: 53A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) TO-263AB | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N60EF-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N65EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 21A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V | auf Bestellung 143 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N65EF-GE3 | Vishay | Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N65EF-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 1011 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N65EF-GE3 | VISHAY | Description: VISHAY - SIHB21N65EF-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 21 A, 0.15 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 208W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: To Be Advised | auf Bestellung 967 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB21N65EF-GE3 | VISHAY | SIHB21N65EF-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N80AE-GE3 | Vishay / Siliconix | MOSFETs TO263 800V 17.4A N-CH MOSFET | auf Bestellung 18821 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N80AE-GE3 | VISHAY | Description: VISHAY - SIHB21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 17.4 A, 0.205 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 17.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.205ohm SVHC: To Be Advised | auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB21N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 179W Gate charge: 72nC Pulsed drain current: 38A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 17.4A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V | auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB21N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 179W Gate charge: 72nC Pulsed drain current: 38A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB21N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 17.4A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: SMD Gate charge: 443nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 20A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: SMD Gate charge: 443nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AE-GE3 | Vishay | Commercial High Voltage Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AE-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60AEL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60AEL-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB22N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB22N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60E-GE3 | VISHAY | Description: VISHAY - SIHB22N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 21 A, 0.15 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 227W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 227W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.15ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB22N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB22N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 8484 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 50 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60E-GE3-X | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EF | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EF-GE3 | Vishay / Siliconix | MOSFETs Nch 600V Vds 30V Vgs TO-263; w/diode | auf Bestellung 1730 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EL-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 45A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 197mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 45A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 197mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60EL-GE3 | Vishay | EL Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET1-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60ET1-GE3 | Vishay / Siliconix | MOSFETs 600V Vds E Series D2PAK TO-263 | auf Bestellung 818 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60ET1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET5-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET5-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET5-GE3 | Vishay / Siliconix | MOSFETs 600V Vds E Series D2PAK TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60ET5-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60S-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60S-E3 | Vishay | Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 22A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60S-GE3 | Vishay | Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N60S-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 22A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-GE3 | VISHAY | SIHB22N65E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 22A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65E-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V | auf Bestellung 752 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N65E-T1-GE3 | Vishay | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB22N65E-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB22N65ET1-GE3 | Vishay | MOSFETs TO263 650V 21A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB23N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB23N60E-GE3 | VISHAY | SIHB23N60E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB23N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 23A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB23N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 1010 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHB24N65E-E3 | Vishay Siliconix | Description: MOSFET N-CH 650V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB24N65E-E3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65E-E3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65E-GE3 | VISHAY | SIHB24N65E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65E-GE3 | VISHAY | Description: VISHAY - SIHB24N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.12 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.12ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1986 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB24N65E-GE3 | auf Bestellung 1970 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHB24N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V | auf Bestellung 1868 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 3333 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65E-GE3-X | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 65A; 250W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 65A Drain-source voltage: 650V Drain current: 15A On-state resistance: 156mΩ | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 65A; 250W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 65A Drain-source voltage: 650V Drain current: 15A On-state resistance: 156mΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 837 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65EF-GE3 | VISHAY | Description: VISHAY - SIHB24N65EF-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.13 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: To Be Advised | auf Bestellung 715 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB24N65EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EF-GE3 | Vishay | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EFT1-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65EFT1-GE3 | Vishay | E Series Power MOSFET with Fast Body Diode | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EFT1-GE3 | Vishay | E Series Power MOSFET with Fast Body Diode | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EFT1-GE3 | VISHAY | SIHB24N65EFT1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N65EFT1-GE3 | Vishay Siliconix | Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V | auf Bestellung 2817 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65EFT1-GE3 | Vishay / Siliconix | MOSFETs TO263 650V 24A N-CH MOSFET | auf Bestellung 3973 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N65EFT5-GE3 | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB24N65ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 24A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB24N65ET1-GE3 | Vishay / Siliconix | MOSFETs N-Channel 650V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB24N65ET5-GE3 | Vishay / Siliconix | MOSFETs N-Channel 650V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB24N65ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 24A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 21A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N80AE-GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | auf Bestellung 1217 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB24N80AE-GE3 | VISHAY | SIHB24N80AE-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB24N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 21A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V | auf Bestellung 1036 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB25N50E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 26A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB25N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB25N50E-GE3 | Vishay | Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB25N50E-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 2983 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB25N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB25N50E-GE3 | VISHAY | Description: VISHAY - SIHB25N50E-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 26 A, 0.125 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.125ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB28N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB28N60EF-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB28N60EF-GE3 | VISHAY | SIHB28N60EF-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB28N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 28A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | auf Bestellung 1229 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB28N60EF-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB28N60EF-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB28N60EF-T1-GE3 | Vishay | MOSFETs TO263 600V 28A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB28N60EF-T5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB28N60EF-T5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB28N60EF-T5-GE3 | Vishay | MOSFETs TO263 600V 28A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60AEL-GE3 | VISHAY | Description: VISHAY - SIHB30N60AEL-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 28 A, 0.105 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 28 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: EL Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.105 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60AEL-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60AEL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 28A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60AEL-GE3 | VISHAY | Description: VISHAY - SIHB30N60AEL-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 28 A, 0.105 ohm, TO-263 (D2PAK), Oberflächenmontage MSL: MSL 1 - unbegrenzt Transistormontage: Oberflächenmontage Wandlerpolarität: n-Kanal Bauform - Transistor: TO-263 (D2PAK) Betriebstemperatur, max.: 150 Produktpalette: EL | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60AEL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 28A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60AEL-GE3 | Vishay | EL Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SiHB30N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 76A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 250W Gate charge: 130nC Pulsed drain current: 76A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 76A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 250W Gate charge: 130nC Pulsed drain current: 76A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | auf Bestellung 706 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60E-GE3 | VISHAY | Description: VISHAY - SIHB30N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.104 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.104ohm SVHC: No SVHC (17-Dec-2014) | auf Bestellung 1466 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB30N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 1101 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60ET1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60ET1-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60ET1-GE3 | Vishay / Siliconix | MOSFETs TO263 600V 29A N-CH MOSFET | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60ET1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | auf Bestellung 1112 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60ET5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60ET5-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB30N60ET5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB30N60ET5-GE3 | Vishay / Siliconix | MOSFETs TO263 600V 29A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 2962 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB33N60E-GE3 | VISHAY | Description: VISHAY - SIHB33N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 33 A, 0.083 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.083ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB33N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 33A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V | auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB33N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB33N60E-GE3 | VISHAY | SIHB33N60E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60E-GE3 | VISHAY | Description: VISHAY - SIHB33N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 33 A, 0.083 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.083ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB33N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60EF-GE3 | VISHAY | SIHB33N60EF-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60EF-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB33N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 33A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V | auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB33N60ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 33A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60ET1-GE3 | Vishay Semiconductors | MOSFETs N-Channel 600V | auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB33N60ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 33A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 33A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB33N60ET5-GE3 | Vishay / Siliconix | MOSFETs 600V Vds E Series D2PAK TO-263 | auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB35N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 32A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V | auf Bestellung 93 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB35N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB35N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 132nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 132nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | VISHAY | Description: VISHAY - SIHB35N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 32 A, 0.084 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 250 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.084 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (19-Jan-2021) | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 134nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 134nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | VISHAY | Description: VISHAY - SIHB35N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 32 A, 0.084 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600 rohsCompliant: YES Dauer-Drainstrom Id: 32 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 250 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 250 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: EF productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.084 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.084 SVHC: Lead (19-Jan-2021) | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 32A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB4N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB4N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 4.3A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB4N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB4N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB4N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB5N80AE-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V | auf Bestellung 655 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB5N80AE-GE3 | Vishay | MOSFETs TO263 800V 4.4A N-CH MOSFET | auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB5N80AE-GE3 | VISHAY | Description: VISHAY - SIHB5N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 4.4 A, 1.17 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 4.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.17ohm SVHC: To Be Advised | auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB6N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 7A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N80AE-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V | auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB6N80AE-GE3 | Vishay | MOSFETs Unclassified | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N80E-GE3 | Vishay / Siliconix | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB6N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.4A Pulsed drain current: 15A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.4A Pulsed drain current: 15A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V D2PAK TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB6N80E-GE3 | Vishay | E Series Power MOSFET | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHB8N50D-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 8.7A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB8N50D-GE3 | Vishay | Trans MOSFET N-CH 500V 8.7A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB8N50D-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB8N50D-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHB8N50D-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD11N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 8A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 2659 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-GE3 | Vishay / Siliconix | MOSFETs TO252 800V 8A N-CH MOSFET | auf Bestellung 8420 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-GE3 | VISHAY | Description: VISHAY - SIHD11N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.391 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.391ohm SVHC: To Be Advised | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD11N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD11N80AE-GE3 | VISHAY | Description: VISHAY - SIHD11N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.391 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.391ohm SVHC: To Be Advised | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD11N80AE-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-T1-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-T1-GE3 | Vishay | MOSFETs TO252 800V 8A N-CH MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-T4-GE3 | Vishay | MOSFETs TO252 800V 8A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD11N80AE-T4-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD11N80AE-T4-GE3 | Vishay Siliconix | Description: N-CHANNEL 800V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD12N50E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 550V 10.5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V | auf Bestellung 2939 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD12N50E-GE3 | Vishay | Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD12N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 114W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD12N50E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 114W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD12N50E-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 4931 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD12N50E-T1-GE3 | Vishay | Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60E-BE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 600V | auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD14N60E-BE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 13A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SiHD14N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 11815 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiHD14N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 13A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD14N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SiHD14N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 147W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 32A Gate charge: 64nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SiHD14N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 147W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 32A Gate charge: 64nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | auf Bestellung 1597 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD14N60ET1-GE3 | Vishay / Siliconix | MOSFETs TO252 600V 13A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET1-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET1-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET4-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET4-GE3 | Vishay / Siliconix | MOSFETs TO252 600V 13A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET4-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD14N60ET5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD14N60ET5-GE3 | Vishay Siliconix | Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V | auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD14N60ET5-GE3 | Vishay / Siliconix | MOSFETs TO252 600V 13A N-CH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD180N60E-GE3 | VISHAY | Description: VISHAY - SIHD180N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 19 A, 0.17 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.17ohm SVHC: To Be Advised | auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD180N60E-GE3 | VISHAY | Description: VISHAY - SIHD180N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 19 A, 0.17 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.17ohm SVHC: To Be Advised | auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD180N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 100 V | auf Bestellung 2857 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD180N60E-GE3 | Vishay Semiconductors | MOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | auf Bestellung 3773 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD180N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD180N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD180N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD186N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 19A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V | auf Bestellung 6140 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD186N60EF-GE3 | Vishay Semiconductors | MOSFETs TO252 600V 19A N-CH MOSFET | auf Bestellung 1245 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD186N60EF-GE3 | VISHAY | SIHD186N60EF-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD186N60EF-GE3 | VISHAY | Description: VISHAY - SIHD186N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 19 A, 0.175 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 156W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.175ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.175ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 2234 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD186N60EF-GE3 | VISHAY | Description: VISHAY - SIHD186N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 19 A, 0.175 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 156W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.175ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.175ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 2234 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD186N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD186N60EFT1-GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD1K4N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD1K4N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 4.2A TO252AA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD1K4N60E-GE3 | VISHAY | SIHD1K4N60E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD1K4N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 4.2A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD240N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD240N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V | auf Bestellung 2977 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD240N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD240N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD240N60E-GE3 | VISHAY | Description: VISHAY - SIHD240N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.208 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.208ohm SVHC: To Be Advised | auf Bestellung 2701 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD240N60E-GE3 | VISHAY | Description: VISHAY - SIHD240N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.208 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.208ohm SVHC: To Be Advised | auf Bestellung 2701 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD240N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD240N65E-GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 650V | auf Bestellung 2950 Stücke: Lieferzeit 143-147 Tag (e) |
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| SIHD2N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD2N80AE-GE3 | Vishay / Siliconix | MOSFETs Nch 800V Vds 30V Vgs TO-252 (DPAK) | auf Bestellung 7979 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD2N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHD2N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD Case: DPAK; TO252 Mounting: SMD On-state resistance: 2.5Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Version: ESD Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 3.6A | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHD2N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 2.9A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD2N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD Case: DPAK; TO252 Mounting: SMD On-state resistance: 2.5Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Version: ESD Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 3.6A Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIHD2N80AE-GE3 | Vishay | Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD2N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD2N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 2.8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| SIHD2N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD2N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD2N80E-GE3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 77326 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-BE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 500V | auf Bestellung 23845 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-BE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50D-E3 | Vishay | Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50D-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50D-E3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 3105 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-GE3 | VISHAY | SIHD3N50D-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50D-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-GE3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 3102 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50D-GE3 | VISHAY | Description: VISHAY - SIHD3N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 3 A, 2.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 104W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: D productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.6ohm SVHC: No SVHC (17-Dec-2014) | auf Bestellung 2664 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD3N50D-GE3 | Vishay | Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50D-GE3 | VISHAY | Description: VISHAY - SIHD3N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 3 A, 2.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 104W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: D productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.6ohm SVHC: No SVHC (17-Dec-2014) | auf Bestellung 2664 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD3N50DT1-GE3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50DT1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50DT4-GE3 | Vishay | D Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50DT4-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50DT4-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD3N50DT5-GE3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD3N50DT5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD4N80E-GE3 | VISHAY | Description: VISHAY - SIHD4N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 4.3 A, 1.1 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800 Dauer-Drainstrom Id: 4.3 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 69 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: E Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1.1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: Lead (19-Jan-2021) | auf Bestellung 1053 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD4N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 4.3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V | auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD4N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD4N80E-GE3 | VISHAY | Description: VISHAY - SIHD4N80E-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 4.3 A, 1.1 ohm, TO-252 (DPAK), Oberflächenmontage SVHC: Lead (19-Jan-2021) | auf Bestellung 1053 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD4N80E-GE3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 2321 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD4N80E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD4N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD4N80ET4-GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD5N50D-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 5.3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-E3 | Vishay | Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-GE3 | Vishay | Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 104W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-GE3 | VISHAY | Description: VISHAY - SIHD5N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 5.3 A, 1.2 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 104W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 104W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: D productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.2ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD5N50D-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 104W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-GE3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 5974 Stücke: Lieferzeit 190-194 Tag (e) |
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| SIHD5N50D-GE3 | Vishay Siliconix | Description: MOSFET N-CH 500V 5.3A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD5N50D-GE3 | VISHAY | Description: VISHAY - SIHD5N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 5.3 A, 1.2 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 104W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 1.2ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (19-Jan-2021) | auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD5N80AE-GE3 | Vishay / Siliconix | MOSFETs DPAK 800V 4.4A E SERIES | auf Bestellung 3024 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD5N80AE-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET DPAK (TO-2 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V | auf Bestellung 3006 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD690N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 6.4A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD690N60E-GE3 | Vishay Semiconductors | MOSFETs 600V DPAK (TO-252) N-CHANNEL | auf Bestellung 2165 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD690N60E-GE3 | VISHAY | SIHD690N60E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD690N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 6.4A DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62E-GE3 | Vishay | Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62E-GE3 | Vishay Semiconductors | MOSFET 620V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N62E-GE3 | VISHAY | SIHD6N62E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 620V 6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62E-GE3 | VISHAY | Description: VISHAY - SIHD6N62E-GE3 - Leistungs-MOSFET, n-Kanal, 620 V, 6 A, 0.78 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 620 Dauer-Drainstrom Id: 6 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 78 Gate-Source-Schwellenspannung, max.: - Verlustleistung: 78 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.78 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.78 SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62ET1-GE3 | Vishay / Siliconix | MOSFET 620V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 620V 6A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 620V 6A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N62ET1-GE3 | Vishay | N-CHANNEL 620V MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65E-GE3 | VISHAY | Description: VISHAY - SIHD6N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 7 A, 0.5 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: To Be Advised | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD6N65E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 8995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N65E-GE3 | VISHAY | Description: VISHAY - SIHD6N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 7 A, 0.5 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 78W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.5ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: To Be Advised | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD6N65ET1-GE3 | Vishay / Siliconix | MOSFETs 650V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65ET1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65ET4-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65ET4-GE3 | Vishay / Siliconix | MOSFETs 650V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N65ET5-GE3 | Vishay / Siliconix | MOSFETs 650V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80AE-GE3 | Vishay | Power MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD6N80AE-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V | auf Bestellung 3014 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80AE-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80AE-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 800V DPAK (TO-252) | auf Bestellung 3239 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 800V 5.4A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V | auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Pulsed drain current: 15A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Pulsed drain current: 15A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD6N80E-GE3 | Vishay Semiconductors | MOSFETs 800V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 1347 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD6N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA | auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHD6N80E-GE3 | Vishay | Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-E3 | Vishay / Siliconix | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-E3 | Vishay | TRANS MOSFET N-CH 600V 7A 3-PIN(2+TAB) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-GE3 | VISHAY | Description: VISHAY - SIHD7N60E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 7 A, 0.5 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 3654 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD7N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 7A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD7N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 3436 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD7N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK | auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHD7N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60E-GE3-X | Vishay | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET-GE3 | Vishay / Siliconix | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET1-GE3 | Vishay Semiconductors | MOSFETs 600V 600mOhm@10V 7A N-Ch E-SRS | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET4-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET4-GE3 | Vishay Semiconductors | MOSFET 600V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET5-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD7N60ET5-GE3 | Vishay / Siliconix | MOSFET 600V Vds E Series DPAK TO-252 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD9N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 9A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD9N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) | auf Bestellung 2685 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHD9N60E-GE3 | Vishay | E Series Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD9N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 22A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 368mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 22A Gate charge: 52nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHD9N60E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 22A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 368mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 22A Gate charge: 52nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHDGGA120A01 | Amphenol Socapex | Rectangular Mil Spec Connectors THERMAL CLAMP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF065N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab ) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF065N60E-GE3 | VISHAY | SIHF065N60E-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF065N60E-GE3 | Vishay | SIHF065N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 40A 3-Pin(3+Tab ) TO-220FP - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF065N60E-GE3 | Vishay Semiconductors | MOSFETs 650V Vds; 30V Vgs TO-220 | auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF065N60E-GE3 | Vishay | SIHF065N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 40A 3-Pin(3+Tab ) TO-220FP - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF065N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 40A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V | auf Bestellung 602 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF065N60E-GE3 | Vishay | SIHF065N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 40A 3-Pin(3+Tab ) TO-220FP - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF068N60EF | Vishay | Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF068N60EF-GE3 | Vishay Semiconductors | MOSFETs TO220 600V 16A N-CH MOSFET | auf Bestellung 502 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF068N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 16A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V | auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF068N60EF-GE3 | VISHAY | SIHF068N60EF-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF068N60EF-GE3 | VISHAY | Description: VISHAY - SIHF068N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 16 A, 0.059 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: EF productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.059ohm SVHC: To Be Advised | auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF068N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF074N65E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET TO-220 FUL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF074N65E-GE3 | VISHAY | Description: VISHAY - SIHF074N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 14 A, 0.07 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: To Be Advised | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF074N65E-GE3 | VISHAY | Description: VISHAY - SIHF074N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 14 A, 0.07 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: To Be Advised | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF074N65E-GE3 | Vishay / Siliconix | MOSFETs E Series Power MOSFET TO-220 FULLPAK, 79 mohm a. 10V | auf Bestellung 2209 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF080N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 14A Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF080N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 14A Tube | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF080N60E-GE3 | Vishay / Siliconix | MOSFETs TO220 600V 14A E SERIES | auf Bestellung 3584 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF080N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 14A Tube | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF080N60E-GE3 | Vishay Siliconix | Description: E SERIES POWER MOSFET TO-220 FUL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V | auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF080N60E-GE3 | VISHAY | Description: VISHAY - SIHF080N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 14 A, 0.07 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: To Be Advised | auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF080N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 14A Tube | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF085N60EF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET TO-220 FU Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF085N60EF-GE3 | Vishay Siliconix | Description: EF SERIES POWER MOSFET TO-220 FU Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF085N60EF-GE3 | Vishay / Siliconix | MOSFETs EF Series Power MOSFET TO-220 FULLPAK, 84 mohm a. 10V | auf Bestellung 1865 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF10N40D-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 23A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF10N40D-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 23A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF10N40D-E3 | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220FP | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHF10N40D-E3 | Vishay Siliconix | Description: MOSFET N-CH 400V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V | auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF10N40D-E3 | Vishay / Siliconix | MOSFETs 400V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF10N40D-E3 | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF10N40D-E3 | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N50C-E3 | Vishay Semiconductors | MOSFETs N-Channel 500V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N50C-E3 | Vishay | Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N50C-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V | auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF12N60E-E3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-E3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF12N60E-E3 Produktcode: 171580 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF12N60E-E3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF12N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 6598 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N65E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Pulsed drain current: 28A Gate charge: 70nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N65E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Pulsed drain current: 28A Gate charge: 70nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF12N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V | auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF12N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF15N60E-E3 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHF15N60E-E3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-E3 | VISHAY | Description: VISHAY - SIHF15N60E-E3 - Leistungs-MOSFET, n-Kanal, 600 V, 15 A, 0.23 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 15 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 34 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 34 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: E Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.23 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.23 SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 15A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-E3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SI71 | Produkt ist nicht verfügbar | |||||||||||||||
| SiHF15N60E-E3 Produktcode: 117209 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF15N60E-E3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-E3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF15N60E-GE3 Produktcode: 127335 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF15N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | VISHAY | Description: VISHAY - SIHF15N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 15 A, 0.23 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm | auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF15N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 | auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF15N65E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N65E-GE3 | VISHAY | Description: VISHAY - SIHF15N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.23 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm SVHC: To Be Advised | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF15N65E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF15N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF16N50C-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 16A TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF16N50C-E3 | Vishay / Siliconix | MOSFET N-Channel 500V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF16N50C-E3 | Vishay | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF16N50C-E3 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHF18N50C-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 | Vishay | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 | VISHAY | Description: VISHAY - SIHF18N50D-E3 - Leistungs-MOSFET, n-Kanal, 500 V, 18 A, 0.23 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 39W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: D productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF18N50D-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 53A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 | Vishay | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 | Vishay Siliconix | Description: MOSFET N-CH 500V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V | auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF18N50D-E3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 53A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 53A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 | Vishay / Siliconix | MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 894 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF18N50D-E3 | Vishay | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF18N50D-E3 Produktcode: 188008 | Vishay | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 550 V Idd,A: 18 A Rds(on), Ohm: 0,28 Ohm Ciss, pF/Qg, nC: 1500/38 JHGF: THT | auf Bestellung 18 Stück: Lieferzeit 21-28 Tag (e)erwartet 9 Stück: | |||||||||||||||
| SIHF22N60E-E3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SIR4 | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-E3 | Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-E3 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHF22N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V | auf Bestellung 946 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF22N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 1348 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF22N60E-GE3 | VISHAY | Description: VISHAY - SIHF22N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 21 A, 0.15 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 35W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm | auf Bestellung 959 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF22N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60S-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N60S-E3 | auf Bestellung 82 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIHF22N60S-E3 | Vishay | Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N65E-GE3 | Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N65E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 650V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF22N65E-GE3 | VISHAY | SIHF22N65E-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF23N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF23N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 23A TO220 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF23N60E-GE3 | VISHAY | SIHF23N60E-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF23N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 950 Stücke: Lieferzeit 136-140 Tag (e) |
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| SIHF28N60EF-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF28N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Full-Pak | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF28N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 28A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF28N60EF-GE3 | VISHAY | SIHF28N60EF-GE3 THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF2X0.5 Produktcode: 108027 | Kabel, Draht, Flachbandkabel, Netzkabel > Kabel | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF30N60E-E3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SiHF30N60E-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 29A TO220 | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| SIHF30N60E-E3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SiHF30N60E-E3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF30N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 29A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V | auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF30N60E-GE3 | VISHAY | Description: VISHAY - SIHF30N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.104 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 29 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 37 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 37 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.104 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.104 SVHC: Lead (19-Jan-2021) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| SIHF30N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 37W Gate charge: 130nC Pulsed drain current: 676A | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF30N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF30N60E-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 37W Gate charge: 130nC Pulsed drain current: 676A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF30N60E-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF30N60E-GE3 | Vishay | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60E-GE3 | Vishay | SIHF35N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 32A 3-Pin(3+Tab) TO-220FP - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60E-GE3 | Vishay / Siliconix | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60E-GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 600V 32A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 134nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | Vishay Siliconix | Description: MOSFET N-CH 600V 32A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220FP | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF35N60EF-GE3 | Vishay Semiconductors | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF35N60EF-GE3 | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Pulsed drain current: 80A Gate charge: 134nC | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF3X0.5 Produktcode: 123726 | Kabel, Draht, Flachbandkabel, Netzkabel > Litze | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF3X0.75 Produktcode: 104161 | HELUKABEL | Kabel, Draht, Flachbandkabel, Netzkabel > Kabel | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF4X0.5 Produktcode: 115638 | Kabel, Draht, Flachbandkabel, Netzkabel > Kabel | Produkt ist nicht verfügbar | ||||||||||||||||
| SIHF510STRL-GE3 | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF520STRL-GE3 | Vishay / Siliconix | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF520STRL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 9.2A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF520STRR-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 9.2A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF520STRR-GE3 | Vishay / Siliconix | MOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF530-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 14A TO220AB Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| SIHF530-GE3 | Vishay / Siliconix | MOSFETs 100V Vds 20V Vgs TO-220AB | Produkt ist nicht verfügbar |