![SIHA150N60E-GE3 SIHA150N60E-GE3](https://www.mouser.com/images/vishay/lrg/Thin-TO-220-FULLPAK_t.jpg)
auf Bestellung 950 Stücke:
Lieferzeit 157-161 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.68 EUR |
10+ | 4.77 EUR |
25+ | 4.51 EUR |
100+ | 3.85 EUR |
250+ | 3.63 EUR |
500+ | 3.41 EUR |
1000+ | 2.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHA150N60E-GE3 Vishay / Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V.
Weitere Produktangebote SIHA150N60E-GE3 nach Preis ab 2.78 EUR bis 5.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SIHA150N60E-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|