SIHA6N80AE-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.8 EUR |
| 50+ | 1.45 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHA6N80AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220, Packaging: Cut Tape (CT), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), FET Type: N-Channel, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V.
Weitere Produktangebote SIHA6N80AE-GE3 nach Preis ab 0.83 EUR bis 1.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHA6N80AE-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 800V TO-220FP |
auf Bestellung 562 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SIHA6N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO220 Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V |
auf Bestellung 2136 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SIHA6N80AE-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHA6N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 0.826 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.826ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| SIHA6N80AE-GE3 | Hersteller : Vishay |
Power MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SIHA6N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| SIHA6N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |