SIHD6N80E-GE3 Vishay Semiconductors
auf Bestellung 1347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.90 EUR |
| 100+ | 2.13 EUR |
| 250+ | 1.97 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.64 EUR |
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Technische Details SIHD6N80E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 5.4A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V.
Weitere Produktangebote SIHD6N80E-GE3 nach Preis ab 1.61 EUR bis 4.82 EUR
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SIHD6N80E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 800V 5.4A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V |
auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD6N80E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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| SIHD6N80E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Pulsed drain current: 15A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHD6N80E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Pulsed drain current: 15A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |