SIHF15N60E-GE3 Vishay / Siliconix
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.27 EUR |
| 25+ | 3.40 EUR |
| 100+ | 3.12 EUR |
| 250+ | 3.08 EUR |
| 500+ | 2.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF15N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 15A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote SIHF15N60E-GE3 nach Preis ab 2.61 EUR bis 6.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHF15N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 15A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SIHF15N60E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHF15N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 15 A, 0.23 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 34W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.23ohm |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
|
SIHF15N60E-GE3 Produktcode: 127335 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||
 |
SIHF15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
|||||||||||
 |
SIHF15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
|||||||||||
|
|
SIHF15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
|||||||||||
| SIHF15N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| SIHF15N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |