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SIHB24N80AE-GE3 Vishay / Siliconix
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.17 EUR |
10+ | 4.79 EUR |
50+ | 4.44 EUR |
100+ | 3.8 EUR |
250+ | 3.68 EUR |
500+ | 3.38 EUR |
1000+ | 2.75 EUR |
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Technische Details SIHB24N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 21A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V.
Weitere Produktangebote SIHB24N80AE-GE3 nach Preis ab 3.76 EUR bis 5.54 EUR
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SIHB24N80AE-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB24N80AE-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHB24N80AE-GE3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |