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SIHB12N65E-GE3 Vishay / Siliconix
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.59 EUR |
10+ | 3.84 EUR |
100+ | 3.04 EUR |
250+ | 2.82 EUR |
500+ | 2.55 EUR |
1000+ | 2.18 EUR |
2000+ | 2.08 EUR |
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Technische Details SIHB12N65E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 12A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V.
Weitere Produktangebote SIHB12N65E-GE3 nach Preis ab 3.72 EUR bis 4.63 EUR
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SIHB12N65E-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB12N65E-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHB12N65E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 28A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHB12N65E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 28A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |