SIHF074N65E-GE3 Vishay / Siliconix
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.37 EUR |
| 10+ | 10.61 EUR |
| 25+ | 9.63 EUR |
| 100+ | 8.84 EUR |
| 250+ | 8.31 EUR |
| 500+ | 7.8 EUR |
| 1000+ | 7.02 EUR |
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Technische Details SIHF074N65E-GE3 Vishay / Siliconix
Description: E SERIES POWER MOSFET TO-220 FUL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V.
Weitere Produktangebote SIHF074N65E-GE3 nach Preis ab 7.83 EUR bis 12.43 EUR
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SIHF074N65E-GE3 | Hersteller : Vishay Siliconix |
 Description: E SERIES POWER MOSFET TO-220 FULPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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