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SIHA15N80AEF-GE3 Vishay Siliconix
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Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.35 EUR |
50+ | 3.48 EUR |
100+ | 2.87 EUR |
500+ | 2.43 EUR |
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Technische Details SIHA15N80AEF-GE3 Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V.
Weitere Produktangebote SIHA15N80AEF-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHA15N80AEF-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHA15N80AEF-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHA15N80AEF-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
||
SIHA15N80AEF-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |