Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 361 nach 1259

Wählen Sie Seite:   [  << Vorherige Seite ]  1 125 250 356 357 358 359 360 361 362 363 364 365 366 375 500 625 750 875 1000 1125 1250 1259  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
B0540WQ-7-F B0540WQ-7-F Diodes Incorporated B0540WQ.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 951000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.095 EUR
9000+ 0.079 EUR
30000+ 0.078 EUR
75000+ 0.07 EUR
150000+ 0.06 EUR
Mindestbestellmenge: 3000
B1100BQ-13-F B1100BQ-13-F Diodes Incorporated B170BQ-B180BQ-B190BQ-B1100BQ.pdf Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.14 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
B230AQ-13-F B230AQ-13-F Diodes Incorporated B220AQ-Q-B260AQ-Q.pdf Description: DIODE SCHOTTKY 30V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.18 EUR
10000+ 0.16 EUR
Mindestbestellmenge: 5000
B360BQ-13-F B360BQ-13-F Diodes Incorporated B340BQ-B360BQ.pdf Description: DIODE SCHOTTKY 60V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
B520CQ-13-F B520CQ-13-F Diodes Incorporated B520CQ-B560CQ.pdf Description: DIODE SCHOTTKY 20V 5A SMC
Produkt ist nicht verfügbar
B560CQ-13-F B560CQ-13-F Diodes Incorporated B520CQ-B560CQ.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
BAT54LP-7B BAT54LP-7B Diodes Incorporated BAT54LP.pdf Description: DIODE SCHOTTKY 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 640000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.077 EUR
Mindestbestellmenge: 10000
BAT760Q-7 BAT760Q-7 Diodes Incorporated BAT760.pdf Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 633000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
9000+ 0.12 EUR
75000+ 0.1 EUR
Mindestbestellmenge: 3000
BAV23SQ-7-F BAV23SQ-7-F Diodes Incorporated BAV23A_C_S.pdf Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.095 EUR
9000+ 0.079 EUR
30000+ 0.078 EUR
75000+ 0.07 EUR
Mindestbestellmenge: 3000
BC56-16PA-7 BC56-16PA-7 Diodes Incorporated BC56_16PA.pdf Description: TRANS NPN 80V 1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
BC807-40Q-7-F BC807-40Q-7-F Diodes Incorporated BC807-16_-25_-40.pdf Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 957000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BC817-16Q-7-F BC817-16Q-7-F Diodes Incorporated BC817-16Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1062000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BC817-40Q-13-F BC817-40Q-13-F Diodes Incorporated BC817-16Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.032 EUR
Mindestbestellmenge: 10000
BC817-40Q-7-F BC817-40Q-7-F Diodes Incorporated BC817-16Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6438000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BCR420UW6Q-7 BCR420UW6Q-7 Diodes Incorporated BCR420UW6Q_BCR421UW6Q.pdf Description: IC LED DRVR LIN PWM 350MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 909000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
15000+ 0.19 EUR
30000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
BSN20Q-7 BSN20Q-7 Diodes Incorporated ds31898.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
9000+ 0.1 EUR
75000+ 0.083 EUR
150000+ 0.082 EUR
Mindestbestellmenge: 3000
BSS138DWQ-7 BSS138DWQ-7 Diodes Incorporated BSS138DWQ.pdf Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1749000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
Mindestbestellmenge: 3000
BZT52HC9V1WF-7 BZT52HC9V1WF-7 Diodes Incorporated BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Description: DIODE ZENER 9.1V SOD123F T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.069 EUR
6000+ 0.064 EUR
9000+ 0.053 EUR
30000+ 0.052 EUR
75000+ 0.047 EUR
Mindestbestellmenge: 3000
DGD2118S8-13 DGD2118S8-13 Diodes Incorporated DGD2117-2118.pdf Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.58 EUR
5000+ 1.52 EUR
Mindestbestellmenge: 2500
DMC1030UFDBQ-7 DMC1030UFDBQ-7 Diodes Incorporated DMC1030UFDBQ_Rev2-3_Aug2022.pdf Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.33 EUR
6000+ 0.31 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
DMC4050SSDQ-13 DMC4050SSDQ-13 Diodes Incorporated DMC4050SSDQ_Web.pdf Description: MOSFET N/P-CH 40V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.52 EUR
Mindestbestellmenge: 2500
DMG1012TQ-7 DMG1012TQ-7 Diodes Incorporated DMG1012T.pdf Description: MOSFET N-CH 20V 630MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3093000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
6000+ 0.052 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
DMG1026UVQ-7 Diodes Incorporated Description: MOSFET 2 N-CH 60V 440MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
DMG2301LK-13 DMG2301LK-13 Diodes Incorporated DMG2301LK.pdf Description: MOSFET P-CH 20V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.13 EUR
50000+ 0.11 EUR
Mindestbestellmenge: 10000
DMMT3906WQ-7-F DMMT3906WQ-7-F Diodes Incorporated ds30312.pdf Description: TRANS 2PNP 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1122000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
DMN3008SFGQ-13 DMN3008SFGQ-13 Diodes Incorporated DMN3008SFGQ.pdf Description: MOSFET N-CH 30V PWRDI3333
Produkt ist nicht verfügbar
DMN3008SFGQ-7 DMN3008SFGQ-7 Diodes Incorporated DMN3008SFGQ.pdf Description: MOSFET N-CH 30V PWRDI3333
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.6 EUR
6000+ 0.56 EUR
10000+ 0.53 EUR
Mindestbestellmenge: 2000
DMN6013LFGQ-13 DMN6013LFGQ-13 Diodes Incorporated DMN6013LFGQ.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.56 EUR
6000+ 0.53 EUR
9000+ 0.49 EUR
Mindestbestellmenge: 3000
DMN6013LFGQ-7 DMN6013LFGQ-7 Diodes Incorporated DMN6013LFGQ.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.56 EUR
6000+ 0.53 EUR
10000+ 0.49 EUR
Mindestbestellmenge: 2000
DMN601WKQ-13 DMN601WKQ-13 Diodes Incorporated DMN601WKQ.pdf Description: MOSFET N-CH 60V SOT323
Produkt ist nicht verfügbar
DMN6040SVTQ-13 DMN6040SVTQ-13 Diodes Incorporated DMN6040SVTQ.pdf Description: MOSFET N-CH 60V 5A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Produkt ist nicht verfügbar
DMNH4006SPSQ-13 DMNH4006SPSQ-13 Diodes Incorporated DMNH4006SPSQ.pdf Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
DMNH4011SPS-13 DMNH4011SPS-13 Diodes Incorporated DMNH4011SPS.pdf Description: MOSFET NCH 40V 13A POWERDI
Produkt ist nicht verfügbar
DMNH4011SPSQ-13 DMNH4011SPSQ-13 Diodes Incorporated DMNH4011SPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
Produkt ist nicht verfügbar
DMP4013LFGQ-7 DMP4013LFGQ-7 Diodes Incorporated DMP4013LFGQ.pdf Description: MOSFET P-CH 40V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.56 EUR
Mindestbestellmenge: 2000
DMP6185SE-13 DMP6185SE-13 Diodes Incorporated DMP6185SE.pdf Description: MOSFET P-CH 60V 3A SOT223
Produkt ist nicht verfügbar
DMP6185SE-7 DMP6185SE-7 Diodes Incorporated DMP6185SE.pdf Description: MOSFET P-CH 60V 3A SOT223
Produkt ist nicht verfügbar
DMT2004UFDF-13 DMT2004UFDF-13 Diodes Incorporated DMT2004UFDF.pdf Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT2004UFDF-7 DMT2004UFDF-7 Diodes Incorporated DMT2004UFDF.pdf Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 3000
DMT3003LFG-13 DMT3003LFG-13 Diodes Incorporated DMT3003LFG.pdf Description: MOSFET NCH 30V 22A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-13 DMT3004LFG-13 Diodes Incorporated DMT3004LFG.pdf Description: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-7 DMT3004LFG-7 Diodes Incorporated DMT3004LFG.pdf Description: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3006LFDF-7 DMT3006LFDF-7 Diodes Incorporated DMT3006LFDF.pdf Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 3000
DMT3020LFDF-13 DMT3020LFDF-13 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET NCH 30V 8.4A UDFN2020
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
DMT6005LCT DMT6005LCT Diodes Incorporated DMT6005LCT.pdf Description: MOSFET NCH 60V 100A TO220AB
Produkt ist nicht verfügbar
DMTH4004LK3-13 DMTH4004LK3-13 Diodes Incorporated DMTH4004LK3.pdf Description: MOSFET N-CH 40V 100A TO252-4L
Produkt ist nicht verfügbar
DMTH4004LK3Q-13 DMTH4004LK3Q-13 Diodes Incorporated DMTH4004LK3Q.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.03 EUR
Mindestbestellmenge: 2500
DMTH4005SK3Q-13 DMTH4005SK3Q-13 Diodes Incorporated DMTH4005SK3Q.pdf Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.57 EUR
5000+ 0.54 EUR
12500+ 0.52 EUR
Mindestbestellmenge: 2500
DMTH6004LPSQ-13 DMTH6004LPSQ-13 Diodes Incorporated DMTH6004LPSQ.pdf Description: MOSFET N-CH 60V 100A POWERDI5060
Produkt ist nicht verfügbar
DMTH8012LK3Q-13 DMTH8012LK3Q-13 Diodes Incorporated DMTH8012LK3Q.pdf Description: MOSFET NCH 80V 50A TO252
Produkt ist nicht verfügbar
DMTH8012LPSQ-13 DMTH8012LPSQ-13 Diodes Incorporated DMTH8012LPSQ.pdf Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 895000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.6 EUR
5000+ 0.57 EUR
12500+ 0.54 EUR
Mindestbestellmenge: 2500
DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODE 13V 21.5V SOD123F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
DZTA42Q-13 DZTA42Q-13 Diodes Incorporated DZTA42Q.pdf Description: TRANS NPN 300V 500MA SOT223
Produkt ist nicht verfügbar
LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR QUAD DIFF TSSOP-14
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.34 EUR
Mindestbestellmenge: 2500
LM2903QS-13 LM2903QS-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 507500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.15 EUR
Mindestbestellmenge: 2500
LM2904QS-13 LM2904QS-13 Diodes Incorporated LM2902Q-04Q.pdf Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.14 EUR
Mindestbestellmenge: 2500
LM4040B30QFTA LM4040B30QFTA Diodes Incorporated Description: IC VREF SHUNT 0.2% SOT23
Produkt ist nicht verfügbar
MBR10100CD-E1 Diodes Incorporated MBR10100C.pdf Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
MBR10100CD-G1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
MBR10100CDTR-E1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
B0540WQ-7-F B0540WQ.pdf
B0540WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 951000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.095 EUR
9000+ 0.079 EUR
30000+ 0.078 EUR
75000+ 0.07 EUR
150000+ 0.06 EUR
Mindestbestellmenge: 3000
B1100BQ-13-F B170BQ-B180BQ-B190BQ-B1100BQ.pdf
B1100BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.14 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
B230AQ-13-F B220AQ-Q-B260AQ-Q.pdf
B230AQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.18 EUR
10000+ 0.16 EUR
Mindestbestellmenge: 5000
B360BQ-13-F B340BQ-B360BQ.pdf
B360BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
B520CQ-13-F B520CQ-B560CQ.pdf
B520CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 5A SMC
Produkt ist nicht verfügbar
B560CQ-13-F B520CQ-B560CQ.pdf
B560CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
BAT54LP-7B BAT54LP.pdf
BAT54LP-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 640000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.077 EUR
Mindestbestellmenge: 10000
BAT760Q-7 BAT760.pdf
BAT760Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 633000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
9000+ 0.12 EUR
75000+ 0.1 EUR
Mindestbestellmenge: 3000
BAV23SQ-7-F BAV23A_C_S.pdf
BAV23SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.095 EUR
9000+ 0.079 EUR
30000+ 0.078 EUR
75000+ 0.07 EUR
Mindestbestellmenge: 3000
BC56-16PA-7 BC56_16PA.pdf
BC56-16PA-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
BC807-40Q-7-F BC807-16_-25_-40.pdf
BC807-40Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 957000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BC817-16Q-7-F BC817-16Q_40Q.pdf
BC817-16Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1062000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BC817-40Q-13-F BC817-16Q_40Q.pdf
BC817-40Q-13-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.032 EUR
Mindestbestellmenge: 10000
BC817-40Q-7-F BC817-16Q_40Q.pdf
BC817-40Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6438000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.058 EUR
6000+ 0.054 EUR
9000+ 0.045 EUR
30000+ 0.044 EUR
75000+ 0.039 EUR
150000+ 0.034 EUR
Mindestbestellmenge: 3000
BCR420UW6Q-7 BCR420UW6Q_BCR421UW6Q.pdf
BCR420UW6Q-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 909000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
15000+ 0.19 EUR
30000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
BSN20Q-7 ds31898.pdf
BSN20Q-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
9000+ 0.1 EUR
75000+ 0.083 EUR
150000+ 0.082 EUR
Mindestbestellmenge: 3000
BSS138DWQ-7 BSS138DWQ.pdf
BSS138DWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1749000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
Mindestbestellmenge: 3000
BZT52HC9V1WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
BZT52HC9V1WF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V SOD123F T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.069 EUR
6000+ 0.064 EUR
9000+ 0.053 EUR
30000+ 0.052 EUR
75000+ 0.047 EUR
Mindestbestellmenge: 3000
DGD2118S8-13 DGD2117-2118.pdf
DGD2118S8-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.58 EUR
5000+ 1.52 EUR
Mindestbestellmenge: 2500
DMC1030UFDBQ-7 DMC1030UFDBQ_Rev2-3_Aug2022.pdf
DMC1030UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.31 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
DMC4050SSDQ-13 DMC4050SSDQ_Web.pdf
DMC4050SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.52 EUR
Mindestbestellmenge: 2500
DMG1012TQ-7 DMG1012T.pdf
DMG1012TQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3093000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.056 EUR
6000+ 0.052 EUR
9000+ 0.045 EUR
Mindestbestellmenge: 3000
DMG1026UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2 N-CH 60V 440MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
DMG2301LK-13 DMG2301LK.pdf
DMG2301LK-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
50000+ 0.11 EUR
Mindestbestellmenge: 10000
DMMT3906WQ-7-F ds30312.pdf
DMMT3906WQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1122000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
75000+ 0.16 EUR
Mindestbestellmenge: 3000
DMN3008SFGQ-13 DMN3008SFGQ.pdf
DMN3008SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Produkt ist nicht verfügbar
DMN3008SFGQ-7 DMN3008SFGQ.pdf
DMN3008SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
auf Bestellung 312000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.6 EUR
6000+ 0.56 EUR
10000+ 0.53 EUR
Mindestbestellmenge: 2000
DMN6013LFGQ-13 DMN6013LFGQ.pdf
DMN6013LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.53 EUR
9000+ 0.49 EUR
Mindestbestellmenge: 3000
DMN6013LFGQ-7 DMN6013LFGQ.pdf
DMN6013LFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.56 EUR
6000+ 0.53 EUR
10000+ 0.49 EUR
Mindestbestellmenge: 2000
DMN601WKQ-13 DMN601WKQ.pdf
DMN601WKQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V SOT323
Produkt ist nicht verfügbar
DMN6040SVTQ-13 DMN6040SVTQ.pdf
DMN6040SVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Produkt ist nicht verfügbar
DMNH4006SPSQ-13 DMNH4006SPSQ.pdf
DMNH4006SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
DMNH4011SPS-13 DMNH4011SPS.pdf
DMNH4011SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 40V 13A POWERDI
Produkt ist nicht verfügbar
DMNH4011SPSQ-13 DMNH4011SPSQ.pdf
DMNH4011SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Produkt ist nicht verfügbar
DMP4013LFGQ-7 DMP4013LFGQ.pdf
DMP4013LFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.56 EUR
Mindestbestellmenge: 2000
DMP6185SE-13 DMP6185SE.pdf
DMP6185SE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Produkt ist nicht verfügbar
DMP6185SE-7 DMP6185SE.pdf
DMP6185SE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Produkt ist nicht verfügbar
DMT2004UFDF-13 DMT2004UFDF.pdf
DMT2004UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT2004UFDF-7 DMT2004UFDF.pdf
DMT2004UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 3000
DMT3003LFG-13 DMT3003LFG.pdf
DMT3003LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 30V 22A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-13 DMT3004LFG.pdf
DMT3004LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3004LFG-7 DMT3004LFG.pdf
DMT3004LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET NCH 30V 10.4A POWERDI
Produkt ist nicht verfügbar
DMT3006LFDF-7 DMT3006LFDF.pdf
DMT3006LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 3000
DMT3020LFDF-13 DMT3020LFDF.pdf
DMT3020LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 30V 8.4A UDFN2020
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
DMT6005LCT DMT6005LCT.pdf
DMT6005LCT
Hersteller: Diodes Incorporated
Description: MOSFET NCH 60V 100A TO220AB
Produkt ist nicht verfügbar
DMTH4004LK3-13 DMTH4004LK3.pdf
DMTH4004LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252-4L
Produkt ist nicht verfügbar
DMTH4004LK3Q-13 DMTH4004LK3Q.pdf
DMTH4004LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.03 EUR
Mindestbestellmenge: 2500
DMTH4005SK3Q-13 DMTH4005SK3Q.pdf
DMTH4005SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.57 EUR
5000+ 0.54 EUR
12500+ 0.52 EUR
Mindestbestellmenge: 2500
DMTH6004LPSQ-13 DMTH6004LPSQ.pdf
DMTH6004LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A POWERDI5060
Produkt ist nicht verfügbar
DMTH8012LK3Q-13 DMTH8012LK3Q.pdf
DMTH8012LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET NCH 80V 50A TO252
Produkt ist nicht verfügbar
DMTH8012LPSQ-13 DMTH8012LPSQ.pdf
DMTH8012LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 895000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.6 EUR
5000+ 0.57 EUR
12500+ 0.54 EUR
Mindestbestellmenge: 2500
DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 13V 21.5V SOD123F
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
DZTA42Q-13 DZTA42Q.pdf
DZTA42Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 500MA SOT223
Produkt ist nicht verfügbar
LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR QUAD DIFF TSSOP-14
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.34 EUR
Mindestbestellmenge: 2500
LM2903QS-13 LM2901Q_03Q.pdf
LM2903QS-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 507500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.15 EUR
Mindestbestellmenge: 2500
LM2904QS-13 LM2902Q-04Q.pdf
LM2904QS-13
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.14 EUR
Mindestbestellmenge: 2500
LM4040B30QFTA
LM4040B30QFTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Produkt ist nicht verfügbar
MBR10100CD-E1 MBR10100C.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
MBR10100CD-G1 MBR10100C_Rev2018.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
MBR10100CDTR-E1 MBR10100C_Rev2018.pdf
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 125 250 356 357 358 359 360 361 362 363 364 365 366 375 500 625 750 875 1000 1125 1250 1259  [ Nächste Seite >> ]