Technische Details DMN3008SFGQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W, Drain-source voltage: 30V, Drain current: 18.4A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 86nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 150A, Mounting: SMD, Case: PowerDI3333-8, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMN3008SFGQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN3008SFGQ-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN3008SFGQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V PWRDI3333 |
Produkt ist nicht verfügbar |
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DMN3008SFGQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |
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| DMN3008SFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |