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DMNH4006SPSQ-13

DMNH4006SPSQ-13 Diodes Incorporated

DMNH4006SPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.29 EUR
100+ 1.79 EUR
500+ 1.47 EUR
Mindestbestellmenge: 7
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Technische Details DMNH4006SPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 40V 110A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V.

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DMNH4006SPSQ-13 Hersteller : DIODES INCORPORATED DMNH4006SPSQ.pdf DMNH4006SPSQ-13 SMD N channel transistors
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DMNH4006SPSQ-13 DMNH4006SPSQ-13 Hersteller : Diodes Incorporated DMNH4006SPSQ.pdf Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
DMNH4006SPSQ-13 Hersteller : Diodes Incorporated DMNH4006SPSQ-959540.pdf MOSFET MOSFET BVDSS: 31V-40V
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