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DMTH8012LPSQ-13

DMTH8012LPSQ-13 Diodes Incorporated

DMTH8012LPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 895000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.6 EUR
5000+ 0.57 EUR
12500+ 0.54 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH8012LPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 80V 10A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V, Power Dissipation (Max): 2.6W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH8012LPSQ-13 nach Preis ab 0.61 EUR bis 1.43 EUR

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DMTH8012LPSQ-13 DMTH8012LPSQ-13 Hersteller : Diodes Incorporated DMTH8012LPSQ.pdf MOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 2042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.41 EUR
10+ 1.16 EUR
100+ 0.9 EUR
500+ 0.77 EUR
1000+ 0.63 EUR
2500+ 0.61 EUR
Mindestbestellmenge: 2
DMTH8012LPSQ-13 DMTH8012LPSQ-13 Hersteller : Diodes Incorporated DMTH8012LPSQ.pdf Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 896893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
15+ 1.18 EUR
100+ 0.92 EUR
500+ 0.78 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 13
DMTH8012LPSQ-13 Hersteller : DIODES INCORPORATED DMTH8012LPSQ.pdf DMTH8012LPSQ-13 SMD N channel transistors
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