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IRF830BPBF VISHAY irf830b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF830PBF IRF830PBF VISHAY irf830.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1280 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
56+ 1.29 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 40
IRF830SPBF IRF830SPBF VISHAY irf830s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF830STRLPBF IRF830STRLPBF VISHAY irf830s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
10+ 7.15 EUR
12+ 5.96 EUR
32+ 2.23 EUR
50+ 1.43 EUR
250+ 1.3 EUR
Mindestbestellmenge: 3
IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 888 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840ASTRRPBF VISHAY sihf840.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840BPBF VISHAY irf840b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840LCLPBF VISHAY sihf840l.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1474 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 39
IRF840LCSPBF VISHAY sihf840l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840PBF IRF840PBF VISHAY IRF840PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2831 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
84+ 0.86 EUR
Mindestbestellmenge: 33
IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1259 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840STRRPBF VISHAY sihf840s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9510PBF IRF9510PBF VISHAY IRF9510PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.8A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.8A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1379 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.2 EUR
76+ 0.95 EUR
159+ 0.45 EUR
169+ 0.43 EUR
Mindestbestellmenge: 60
IRF9510SPBF IRF9510SPBF VISHAY IRF9510S.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.8A; 43W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.8A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
90+ 0.8 EUR
102+ 0.71 EUR
117+ 0.61 EUR
125+ 0.57 EUR
Mindestbestellmenge: 70
IRF9510STRLPBF VISHAY sihf9510.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9510STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9520PBF IRF9520PBF VISHAY IRF9520PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1225 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
63+ 1.15 EUR
125+ 0.58 EUR
132+ 0.54 EUR
Mindestbestellmenge: 49
IRF9520SPBF IRF9520SPBF VISHAY IRF9520S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9520STRLPBF IRF9520STRLPBF VISHAY IRF9520S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9520STRRPBF VISHAY sihf9520.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9530PBF IRF9530PBF VISHAY irf9530.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1071 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
89+ 0.81 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 79
IRF9530SPBF IRF9530SPBF VISHAY IRF9530S.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; 88W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
57+ 1.26 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 54
IRF9530STRLPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9530STRRPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540PBF IRF9540PBF VISHAY IRF9540PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 461 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
54+ 1.33 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 36
IRF9540SPBF IRF9540SPBF VISHAY IRF9540S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1312 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
57+ 1.27 EUR
80+ 0.9 EUR
85+ 0.84 EUR
Mindestbestellmenge: 52
IRF9540STRLPBF IRF9540STRLPBF VISHAY IRF9540S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -19A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9610PBF IRF9610PBF VISHAY IRF9610PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 366 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
100+ 0.72 EUR
113+ 0.64 EUR
139+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRF9610SPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9610STRRPBF VISHAY sihf9610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9620PBF IRF9620PBF VISHAY IRF9620PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1094 Stücke:
Lieferzeit 7-14 Tag (e)
47+1.54 EUR
66+ 1.1 EUR
109+ 0.66 EUR
117+ 0.61 EUR
Mindestbestellmenge: 47
IRF9620SPBF VISHAY sihf9620.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9630PBF IRF9630PBF VISHAY IRF9630PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 757 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.84 EUR
42+ 1.71 EUR
81+ 0.89 EUR
86+ 0.84 EUR
1000+ 0.82 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 39
IRF9630SPBF IRF9630SPBF VISHAY IRF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.23 EUR
55+ 1.32 EUR
87+ 0.83 EUR
91+ 0.79 EUR
Mindestbestellmenge: 23
IRF9630STRLPBF VISHAY IRF9630S_SiHF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -11A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9640PBF IRF9640PBF VISHAY IRF9640PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 972 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.37 EUR
56+ 1.29 EUR
103+ 0.69 EUR
109+ 0.66 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 53
IRF9640SPBF IRF9640SPBF VISHAY IRF9640SPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.99 EUR
40+ 1.82 EUR
68+ 1.06 EUR
72+ 1 EUR
2000+ 0.97 EUR
Mindestbestellmenge: 24
IRF9640STRLPBF IRF9640STRLPBF VISHAY IRF9640SPBF.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9640STRRPBF IRF9640STRRPBF VISHAY IRF9640SPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z10PBF VISHAY irf9z10.pdf IRF9Z10PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z14PBF VISHAY 91088.pdf IRF9Z14PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z14SPBF VISHAY sihf9z14.pdf IRF9Z14SPBF SMD P channel transistors
Produkt ist nicht verfügbar
IRF9Z14STRLPBF VISHAY sihf9z14.pdf IRF9Z14STRLPBF SMD P channel transistors
Produkt ist nicht verfügbar
IRF9Z20PBF VISHAY sihf9z20.pdf IRF9Z20PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z24PBF IRF9Z24PBF VISHAY IRF9Z24.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 316 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
75+ 0.97 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 46
IRF9Z24SPBF IRF9Z24SPBF VISHAY IRF9Z24S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.22 EUR
69+ 1.04 EUR
112+ 0.64 EUR
117+ 0.61 EUR
Mindestbestellmenge: 33
IRF9Z24STRLPBF VISHAY sihf9z24.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z30PBF VISHAY irf520.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z34PBF IRF9Z34PBF VISHAY irf9z34.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1227 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.04 EUR
60+ 1.2 EUR
105+ 0.69 EUR
112+ 0.64 EUR
Mindestbestellmenge: 35
IRF9Z34SPBF IRF9Z34SPBF VISHAY IRF9Z34S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 88W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 583 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.27 EUR
59+ 1.22 EUR
105+ 0.69 EUR
112+ 0.64 EUR
Mindestbestellmenge: 32
IRF9Z34STRLPBF VISHAY sihf9z34.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9Z34STRRPBF VISHAY sihf9z34.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFB11N50APBF IRFB11N50APBF VISHAY IRFB11N50APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 639 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
42+ 1.72 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 36
IRF830BPBF irf830b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF830PBF irf830.pdf
IRF830PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1280 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.79 EUR
56+ 1.29 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 40
IRF830SPBF irf830s.pdf
IRF830SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF830STRLPBF irf830s.pdf
IRF830STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
10+ 7.15 EUR
12+ 5.96 EUR
32+ 2.23 EUR
50+ 1.43 EUR
250+ 1.3 EUR
Mindestbestellmenge: 3
IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 888 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840ASTRRPBF sihf840.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF840BPBF irf840b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840LCLPBF description sihf840l.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1474 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 39
IRF840LCSPBF sihf840l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840PBF IRF840PBF.pdf
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2831 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
84+ 0.86 EUR
Mindestbestellmenge: 33
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1259 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF840STRRPBF sihf840s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9510PBF IRF9510PBF.pdf
IRF9510PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.8A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.8A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1379 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
60+1.2 EUR
76+ 0.95 EUR
159+ 0.45 EUR
169+ 0.43 EUR
Mindestbestellmenge: 60
IRF9510SPBF description IRF9510S.pdf
IRF9510SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.8A; 43W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.8A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
90+ 0.8 EUR
102+ 0.71 EUR
117+ 0.61 EUR
125+ 0.57 EUR
Mindestbestellmenge: 70
IRF9510STRLPBF sihf9510.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9510STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9520PBF IRF9520PBF.pdf
IRF9520PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1225 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
63+ 1.15 EUR
125+ 0.58 EUR
132+ 0.54 EUR
Mindestbestellmenge: 49
IRF9520SPBF IRF9520S.pdf
IRF9520SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9520STRLPBF IRF9520S.pdf
IRF9520STRLPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9520STRRPBF sihf9520.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9530PBF irf9530.pdf
IRF9530PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1071 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
79+0.92 EUR
89+ 0.81 EUR
132+ 0.54 EUR
139+ 0.51 EUR
Mindestbestellmenge: 79
IRF9530SPBF description IRF9530S.pdf
IRF9530SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; 88W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
57+ 1.26 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 54
IRF9530STRLPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9530STRRPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540PBF IRF9540PBF.pdf
IRF9540PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 461 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+1.99 EUR
54+ 1.33 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 36
IRF9540SPBF IRF9540S.pdf
IRF9540SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1312 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.39 EUR
57+ 1.27 EUR
80+ 0.9 EUR
85+ 0.84 EUR
Mindestbestellmenge: 52
IRF9540STRLPBF IRF9540S.pdf
IRF9540STRLPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -19A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9610PBF IRF9610PBF.pdf
IRF9610PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 366 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.12 EUR
100+ 0.72 EUR
113+ 0.64 EUR
139+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRF9610SPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9610STRRPBF sihf9610.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.8A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9620PBF IRF9620PBF.pdf
IRF9620PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1094 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
47+1.54 EUR
66+ 1.1 EUR
109+ 0.66 EUR
117+ 0.61 EUR
Mindestbestellmenge: 47
IRF9620SPBF sihf9620.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9630PBF IRF9630PBF.pdf
IRF9630PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 757 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.84 EUR
42+ 1.71 EUR
81+ 0.89 EUR
86+ 0.84 EUR
1000+ 0.82 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 39
IRF9630SPBF IRF9630S.pdf
IRF9630SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.23 EUR
55+ 1.32 EUR
87+ 0.83 EUR
91+ 0.79 EUR
Mindestbestellmenge: 23
IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.5A; Idm: -26A; 74W
Case: D2PAK; TO263
Drain-source voltage: -200V
Drain current: -6.5A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -11A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9640PBF IRF9640PBF.pdf
IRF9640PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 972 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
56+ 1.29 EUR
103+ 0.69 EUR
109+ 0.66 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 53
IRF9640SPBF IRF9640SPBF.pdf
IRF9640SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+2.99 EUR
40+ 1.82 EUR
68+ 1.06 EUR
72+ 1 EUR
2000+ 0.97 EUR
Mindestbestellmenge: 24
IRF9640STRLPBF description IRF9640SPBF.pdf
IRF9640STRLPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9640STRRPBF IRF9640SPBF.pdf
IRF9640STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z10PBF irf9z10.pdf
Hersteller: VISHAY
IRF9Z10PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z14PBF 91088.pdf
Hersteller: VISHAY
IRF9Z14PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z14SPBF sihf9z14.pdf
Hersteller: VISHAY
IRF9Z14SPBF SMD P channel transistors
Produkt ist nicht verfügbar
IRF9Z14STRLPBF sihf9z14.pdf
Hersteller: VISHAY
IRF9Z14STRLPBF SMD P channel transistors
Produkt ist nicht verfügbar
IRF9Z20PBF sihf9z20.pdf
Hersteller: VISHAY
IRF9Z20PBF THT P channel transistors
Produkt ist nicht verfügbar
IRF9Z24PBF IRF9Z24.pdf
IRF9Z24PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 316 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
75+ 0.97 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 46
IRF9Z24SPBF IRF9Z24S.pdf
IRF9Z24SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.22 EUR
69+ 1.04 EUR
112+ 0.64 EUR
117+ 0.61 EUR
Mindestbestellmenge: 33
IRF9Z24STRLPBF sihf9z24.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z30PBF description irf520.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9Z34PBF irf9z34.pdf
IRF9Z34PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1227 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.04 EUR
60+ 1.2 EUR
105+ 0.69 EUR
112+ 0.64 EUR
Mindestbestellmenge: 35
IRF9Z34SPBF IRF9Z34S.pdf
IRF9Z34SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 88W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 583 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.27 EUR
59+ 1.22 EUR
105+ 0.69 EUR
112+ 0.64 EUR
Mindestbestellmenge: 32
IRF9Z34STRLPBF sihf9z34.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9Z34STRRPBF sihf9z34.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFB11N50APBF IRFB11N50APBF.pdf
IRFB11N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 639 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
42+ 1.72 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 36
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