![IRF9610STRRPBF IRF9610STRRPBF](https://www.mouser.com/images/vishay/lrg/TO_263_AC_3_SPL.jpg)
IRF9610STRRPBF Vishay / Siliconix
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.42 EUR |
10+ | 1.16 EUR |
100+ | 0.9 EUR |
500+ | 0.73 EUR |
800+ | 0.61 EUR |
2400+ | 0.59 EUR |
4800+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF9610STRRPBF Vishay / Siliconix
Description: N-CHANNEL200V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V, Power Dissipation (Max): 3W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRF9610STRRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IRF9610STRRPBF | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IRF9610STRRPBF | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|
IRF9610STRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
IRF9610STRRPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
|
IRF9610STRRPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1.8A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.8A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |