IRF840ALPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Description: MOSFET N-CH 500V 8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.04 EUR |
50+ | 2.41 EUR |
100+ | 2.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF840ALPBF Vishay Siliconix
Description: MOSFET N-CH 500V 8A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V.
Weitere Produktangebote IRF840ALPBF nach Preis ab 1.33 EUR bis 23.84 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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IRF840ALPBF | Hersteller : Vishay Semiconductors | MOSFETs TO262 500V 8A N-CH MOSFET |
auf Bestellung 8256 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF840ALPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840ALPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ALPBF | Hersteller : VISHAY |
Description: VISHAY - IRF840ALPBF - Leistungs-MOSFET, n-Kanal, 500 V, 8 A, 0.85 ohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: 0 Drain-Source-Spannung Vds: 500V rohsCompliant: Y-EX Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 3.1W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: 0 Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0.85ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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IRF840ALPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |