IRF9640SPBF VISHAY
Hersteller: VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 386 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.69 EUR |
| 35+ | 2.06 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
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Technische Details IRF9640SPBF VISHAY
Description: MOSFET P-CH 200V 11A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF9640SPBF nach Preis ab 0.99 EUR bis 4.66 EUR
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IRF9640SPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK |
auf Bestellung 3663 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK |
auf Bestellung 3663 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Hersteller : Vishay Semiconductors |
MOSFETs P-Chan 200V 11 Amp |
auf Bestellung 1963 Stücke: Lieferzeit 178-182 Tag (e) |
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IRF9640SPBF | Hersteller : VISHAY |
Description: VISHAY - IRF9640SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 11 A, 0.5 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: Lead (07-Nov-2024) |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9640S | Hersteller : Siliconix |
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9640S | Hersteller : Siliconix |
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640S Produktcode: 22419
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Lieblingsprodukt
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Hersteller : IR |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SMD-220 Uds,V: 200 Id,A: 11 Rds(on),Om: 0.5 Ciss, pF/Qg, nC: 1200/44 |
Produkt ist nicht verfügbar
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IRF9640S | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IRF9640S | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRF9 |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF9640SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |