Produkte > IRL
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| IRL 80 A | OSRAM Opto Semiconductors | Infrared Emitter 950nm 3.5mW/sr Circular Right Angle 2-Pin | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 80A | ams-OSRAM USA INC. | Description: EMITTER IR 950NM 60MA RADIAL Packaging: Bulk Package / Case: Radial Wavelength: 950nm Mounting Type: Through Hole Type: Infrared (IR) Orientation: Side View Operating Temperature: -40°C ~ 100°C (TA) Voltage - Forward (Vf) (Typ): 1.5V Viewing Angle: 60° Current - DC Forward (If) (Max): 60mA Radiant Intensity (Ie) Min @ If: 0.4mW/sr @ 20mA Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A Produktcode: 169185 | LEDs > LED Infrarot (IR) | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL 81A | ams-OSRAM USA INC. | Description: EMITTER IR 860NM 100MA RADIAL Packaging: Bulk Package / Case: Radial Wavelength: 860nm Mounting Type: Through Hole Type: Infrared (IR) Orientation: Side View Operating Temperature: -40°C ~ 100°C (TA) Voltage - Forward (Vf) (Typ): 1.3V Viewing Angle: 24° Current - DC Forward (If) (Max): 100mA Radiant Intensity (Ie) Min @ If: 25mW/sr @ 20mA | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A | AMS OSRAM GROUP | Description: AMS OSRAM GROUP - IRL 81A - Infrarot-Emitter, 860 nm, 24 °, Radial bedrahtet, 25 mW/Sr, 12 ns, 12 ns Bauform - Diode: Radial bedrahtet Durchlassspannung Vf max.: 1.6 Abfallzeit tf: 12 Spitzenwellenlänge: 860 Betriebstemperatur, min.: -40 Strahlungsintensität (Ie): 25 Halbwertswinkel: 24 Qualifizierungsstandard der Automobilindustrie: - Durchlassstrom (mittlerer) If(AV): 100 Produktpalette: - Betriebstemperatur, max.: 100 Anstiegszeit: 12 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 3089 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL 81A | OSRAM Opto Semiconductors | Infrared Emitter 860nm 2.5mW/sr Circular Right Angle 2-Pin Side Looker | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A | OSRAM Opto Semiconductors | Infrared Emitter 860nm 2.5mW/sr Circular Right Angle 2-Pin Side Looker | auf Bestellung 1817 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL 81A | ams OSRAM | Infrared Emitters Infrared 850nm Half Angle +/-12DEG | auf Bestellung 89934 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL 81A E9545 | OSRAM Opto Semiconductors Inc. | Description: EMITTER IR 860NM 100MA RADIAL | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A E9553 | OSRAM Opto (ams OSRAM) | Description: SENSOR | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A-RS | OSRAM Opto Semiconductors | Infrared Emitter Circular Top Mount 4-Pin | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL 81A-RS | OSRAM Opto Semiconductors Inc. | Description: HIGH POWER INFRARED EMITTER 850N | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL-5-D-D-2 | LORLIN | Description: LORLIN - IRL-5-D-D-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 24V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: IRL Series SVHC: Lead (23-Jan-2024) | auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-D-S-2 | LORLIN | Description: LORLIN - IRL-5-D-S-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° rohsCompliant: Y-EX Schalteranschlüsse: Lötanschluss hazardous: false rohsPhthalatesCompliant: YES Kontaktstrom, max.: 1A Schalterfunktion: Tastend mit Federrückführung usEccn: EAR99 Anzahl der Schalterpositionen: 3 Positionen AC-Kontaktspannung, nom.: 24V euEccn: NLR DC-Kontaktspannung, nom.: 24V Produktpalette: IRL Series productTraceability: No Kontaktkonfiguration: SP3T SVHC: No SVHC (16-Jul-2019) | auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-K-D-2 | LORLIN | Description: LORLIN - IRL-5-K-D-2 - Schlüsselschalter, Aus-(Ein), DPDT, IRL Impulsion, 1 Position, Lötanschluss, 1 A tariffCode: 85365015 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 115V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: IRL Impulsion SVHC: Lead (23-Jan-2024) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-K-S-2 | LORLIN | Description: LORLIN - IRL-5-K-S-2 - Schlüsselschalter, DPDT, IRL Impulsion, 2 Positionen, Lötanschluss, 1 A Schaltwinkel: 60 Schalterfunktion: - AC-Kontaktspannung, nom.: 115 Kontaktkonfiguration: DPDT DC-Kontaktspannung, nom.: 24 Anzahl der Schalterpositionen: 2 Positionen Schalteranschlüsse: Lötanschluss Kontaktstrom, max.: 1 Produktpalette: IRL Impulsion SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL-5-L-D-2 | LORLIN | Description: LORLIN - IRL-5-L-D-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° rohsCompliant: Y-EX Schalteranschlüsse: Lötanschluss hazardous: false rohsPhthalatesCompliant: YES Kontaktstrom, max.: 1A Schalterfunktion: Tastend mit Federrückführung usEccn: EAR99 Anzahl der Schalterpositionen: 3 Positionen AC-Kontaktspannung, nom.: 24V euEccn: NLR DC-Kontaktspannung, nom.: 24V Produktpalette: IRL Series productTraceability: No Kontaktkonfiguration: SP3T SVHC: No SVHC (16-Jul-2019) | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-L-S-2 | LORLIN | Description: LORLIN - IRL-5-L-S-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° rohsCompliant: Y-EX Schalteranschlüsse: Lötanschluss hazardous: false rohsPhthalatesCompliant: YES Kontaktstrom, max.: 1A Schalterfunktion: Tastend mit Federrückführung usEccn: EAR99 Anzahl der Schalterpositionen: 3 Positionen AC-Kontaktspannung, nom.: 24V euEccn: NLR DC-Kontaktspannung, nom.: 24V Produktpalette: IRL Series productTraceability: No Kontaktkonfiguration: SP3T SVHC: No SVHC (16-Jul-2019) | auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-M-D-2 | LORLIN | Description: LORLIN - IRL-5-M-D-2 - Schlüsselschalter, Aus-(Ein), DPDT, IRL Impulsion, 1 Position, Lötanschluss, 1 A tariffCode: 85365080 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 115V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-M-S-2 | LORLIN | Description: LORLIN - IRL-5-M-S-2 - Schlüsselschalter, Aus-(Ein), DPDT, IRL Impulsion, 1 Position, Lötanschluss, 1 A tariffCode: 85365080 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 115V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: IRL Impulsion SVHC: Lead (23-Jan-2024) | auf Bestellung 381 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-R-D-2 | LORLIN | Description: LORLIN - IRL-5-R-D-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 24V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: IRL Series SVHC: Lead (23-Jan-2024) | auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-5-R-S-2 | LORLIN | Description: LORLIN - IRL-5-R-S-2 - Schlüsselschalter, Tastend mit Federrückführung, SP3T, IRL Series, 3 Positionen, Lötanschluss tariffCode: 85365015 Schaltwinkel: 60° productTraceability: No rohsCompliant: Y-EX AC-Kontaktspannung, nom.: 24V DC-Kontaktspannung, nom.: 24V euEccn: NLR Kontaktstrom, max.: 1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: IRL Series SVHC: Lead (23-Jan-2024) | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL-CL2-01 | MEAN WELL | LED Lighting Bars and Strips SW/WW 12V 3M LED RL 5700-6500/2900-3200K | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL-P212E50 | SICK, Inc. | Description: REF PHOTOELEC SWITCH Packaging: Bulk Adjustment Type: Adjustable, 9-Turn Potentiometer Sensing Distance: 9.843" ~ 59.055" (250mm ~ 1.5m) Sensing Method: Retroreflective Operating Temperature: -10°C ~ 55°C Output Configuration: PNP Voltage - Supply: 19.2V ~ 27.6V Response Time: 2ms Ingress Protection: IP65 Connection Method: Connector, M12 Light Source: Red LED | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL-RGB-01 | MEAN WELL | LED Lighting Bars and Strips RGB 12V 3M LED Reel 620/515/460nm IP65 | auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL-RGBW-01 | MEAN WELL | LED Lighting Bars and Strips RGBW 12V 3M LED Reel 620/515/460nm 5500K | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL02 200X200X1 | TDK Corporation | Description: RF EMI ABSORB SHEET 7.874X7.874" Packaging: Bulk Material: Polymer Resin, Magnetic Powder Length: 7.874" (200.00mm) Shape: Square Type: Absorbing Sheet Width: 7.874" (200.00mm) Operating Temperature: -40°C ~ 85°C Adhesive: Non-Conductive, Single Sided Thickness - Overall: 0.039" (1.00mm) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL02 200X200X2 | TDK Corporation | Description: RF EMI ABSORB SHEET 7.874X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024B10 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024B20 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024B40 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024F10 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024F20 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024F40 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024P10 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024P20 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL024P40 | Amphenol Pcd | Standard Circular Contacts DIN-rail interface module product -see catalog | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL02A 200X200X1 | TDK Corporation | Description: RF EMI ABSORB SHEET 7.874X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL02A 200X200X2 | TDK Corporation | Description: RF EMI ABSORB SHEET 7.874X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL02AB 300X200X0.05 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL03AB 300X200X0.25 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL03AB 300X200X0.5 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB 300X200X0.25 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB 300X200X0.5 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB300X200X0.25 | TDK - Teridian | SHEET FERRITE 200X300MM | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB300X200X0.5 | TDK | EMI Gaskets, Sheets & Absorbers 50MHz-10GHz | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB300X200X0.50 | TDK | EMI Gaskets, Sheets, Absorbers & Shielding | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL04EAB300X200X0.50 | TDK - Teridian | NOISE SUPPRESION SHEET FLEXIELD | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL05AB 300X200X0.1 | TDK Corporation | Description: RF ABSORB SHEET 11.811"X7.874" | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004 | Infineon Technologies | Description: MOSFET N-CH 40V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004 | Infineon | N-MOSFET 130A 40V 200W IRL1004 IRL1004 TIRL1004 Anzahl je Verpackung: 10 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL1004 | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004L | Infineon Technologies | Description: MOSFET N-CH 40V 130A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004LPBF | Infineon Technologies | Description: MOSFET N-CH 40V 130A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3630 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF | Infineon Technologies | MOSFETs MOSFT 130A 66.7nC 6.5mOhm LogLvAB | auf Bestellung 804 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Description: MOSFET N-CH 40V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1004PBF | INFINEON | Description: INFINEON - IRL1004PBF - Leistungs-MOSFET, n-Kanal, 40 V, 130 A, 0.0065 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 130A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2176 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1004PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL1004PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1004PBF транзистор Produktcode: 198530 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL1004S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1004S | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1004SPBF | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004SPBF | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004SPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRL | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRR | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRRPBF | Infineon Technologies | Description: MOSFET N-CH 40V 130A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1004STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL100HS121 | Infineon Technologies | Description: MOSFET N-CH 100V 11A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL100HS121 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | auf Bestellung 3639 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL100HS121 | Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL100HS121 | Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL100HS121 | Infineon Technologies | Description: MOSFET N-CH 100V 11A 6PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V | auf Bestellung 5771 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL100HS121 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Drain-source voltage: 100V Drain current: 7.8A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 3.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL100HS121 | Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL100HS121 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Drain-source voltage: 100V Drain current: 7.8A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 3.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104 | Infineon Technologies | Trans MOSFET N-CH Si 40V 104A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104 | Infineon Technologies | Description: MOSFET N-CH 40V 104A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104 Produktcode: 99524 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 104 Rds(on), Ohm: 01.08.2000 Ciss, pF/Qg, nC: 3445/68 Bem.: Керування логічним рівнем JHGF: THT | Produkt ist nicht verfügbar |
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| IRL1104L | Infineon Technologies | Description: MOSFET N-CH 40V 104A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104LPBF | Infineon Technologies | Description: MOSFET N-CH 40V 104A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104LPBF | Infineon / IR | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 104A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104PBF | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 104A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104PBF | Infineon Technologies | Description: MOSFET N-CH 40V 104A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1104S | Infineon Technologies | Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1104SPBF | Infineon Technologies | Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104SPBF | Infineon / IR | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104SPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 104A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104SPBF Produktcode: 15420 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak Uds,V: 40 Idd,A: 104 Rds(on), Ohm: 01.08.2000 Ciss, pF/Qg, nC: 3445/68 Bem.: Керування логічним рівнем JHGF: SMD | Produkt ist nicht verfügbar |
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| IRL1104STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRL | Infineon Technologies | Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 104A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRLPBF | Infineon / IR | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRR | Infineon Technologies | Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1104STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404L | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404LPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404LPBF | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 879 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3819 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404PBF Produktcode: 57532 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 160 Rds(on), Ohm: 01.04.2000 Ciss, pF/Qg, nC: 6590/140 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 49 Stück: Lieferzeit 21-28 Tag (e) |
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| IRL1404PBF | INFINEON | Description: INFINEON - IRL1404PBF - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 0.004 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 93.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2085 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404PBF | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404PBF | Infineon Technologies | MOSFETs 40V 1 N-CH HEXFET 4mOhms 93.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404PBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404PBF-INF | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V | auf Bestellung 879 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1404S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1404S | Infineon Technologies | Description: MOSFET N-CH 40V 160A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404SPBF | Infineon / IR | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404SPBF | Infineon Technologies | Description: MOSFET N-CH 40V 160A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | INFINEON | Description: INFINEON - IRL1404STRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 0.004 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 160A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404STRLPBF | INFINEON | Description: INFINEON - IRL1404STRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 0.004 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 160A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 160A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | MOSFETs MOSFT 40V 160A 4mOhm 93.3nC Log Lvl | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404Z | International Rectifier | N-MOSFET HEXFET 40V 75A 200W 0.0031Ω IRL1404Z TIRL1404z Anzahl je Verpackung: 10 Stücke | auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL1404ZL | Infineon Technologies | Description: MOSFET N-CH 40V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZPBF Produktcode: 34998 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 160 Rds(on), Ohm: 01.04.2000 Ciss, pF/Qg, nC: 6590/110 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 169 Stück: Lieferzeit 21-28 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2724 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZPBF | INFINEON | Description: INFINEON - IRL1404ZPBF - Leistungs-MOSFET, Kfz-Anwendungen, n-Kanal, 40 V, 200 A, 0.0031 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0031ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1088 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2724 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404ZPBF | Infineon Technologies | Description: MOSFET N-CH 40V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | auf Bestellung 1626 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404ZPBF | Infineon Technologies | MOSFETs MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | auf Bestellung 934 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 931 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZS | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1404ZS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL1404ZSPBF | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZSPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSPBF | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZSPBF Produktcode: 27885 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 40 V Idd,A: 120 A Rds(on), Ohm: 3,1 mOhm Ciss, pF/Qg, nC: 5080/75 Bem.: Управління логічним рівнем JHGF: SMD | Produkt ist nicht verfügbar |
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| IRL1404ZSTRL | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1684 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 732 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | auf Bestellung 3185 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404ZSTRLPBF | INFINEON | Description: INFINEON - IRL1404ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0025 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 53900 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 732 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1684 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | MOSFETs MOSFT 40V 200A 3.1mOhm 75nC Log Lvl | auf Bestellung 10746 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL1404ZSTRLPBF | INFINEON | Description: INFINEON - IRL1404ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0025 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL1404ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL1N12L | HAR | TO-39; | auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2203 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2203N | International Rectifier | Transistor N-Channel MOSFET; 30V; 16V; 10mOhm; 116A; 180W; -55°C ~ 175°C; IRL2203N TIRL2203n Anzahl je Verpackung: 10 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2203N | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203N | International Rectifier | Transistor N-Channel MOSFET; 30V; 16V; 10mOhm; 116A; 180W; -55°C ~ 175°C; IRL2203N TIRL2203n Anzahl je Verpackung: 10 Stücke | auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2203N | International Rectifier | Transistor N-Channel MOSFET; 30V; 16V; 10mOhm; 116A; 180W; -55°C ~ 175°C; IRL2203N TIRL2203n Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2203N(Transistor) Produktcode: 46039 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL2203N-029 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203N-029HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NL | Infineon Technologies | Description: MOSFET N-CH 30V 116A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NLPBF | Infineon / IR | MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL2203NPBF - IRL2203 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 357361 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2203NPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NPBF | Infineon Technologies | MOSFETs MOSFT 30V 100A 7mOhm 40nC Log LvlAB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 316411 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2203NPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2203NPBF Produktcode: 74311 | IR | Transistoren > MOSFET N-CH Uds,V: 30 V Idd,A: 116 A Rds(on), Ohm: 7 mOhm Ciss, pF/Qg, nC: 3290/60 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 576 Stück: Lieferzeit 21-28 Tag (e)erwartet 20 Stück: | |||||||||||||||||
| IRL2203NPBF-INF | Infineon Technologies | Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NS | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSPBF | International Rectifier Corporation | auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) | ||||||||||||||||||
| IRL2203NSPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSPBF Produktcode: 1761 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL2203NSPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTR | auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL2203NSTRL | auf Bestellung 272 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL2203NSTRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 116A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | Infineon / IR | MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 116A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRR | Infineon Technologies | Description: MOSFET N-CH 30V 116A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRR | IR | 0310+ | auf Bestellung 6400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2203NSTRR | IR | 0310+ | auf Bestellung 6400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2203NSTRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 116A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRRPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2203STRL | Vishay Siliconix | Description: MOSFET N-CH 30V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203STRL | Vishay / Siliconix | MOSFET Discrete Semiconductor Products | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203STRR | Vishay | Vishay | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2203STRR | Vishay Siliconix | Description: MOSFET N-CH 30V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2230NS | IR | auf Bestellung 2360 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL2505 | Infineon Technologies | Trans MOSFET N-CH Si 55V 104A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505 | International Rectifier | N-MOSFET HEXFET 55V 104A 200W 0.008Ω IRL2505 TIRL2505 Anzahl je Verpackung: 10 Stücke | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2505L | Infineon Technologies | Description: MOSFET N-CH 55V 104A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505LPBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505PBF Produktcode: 27992 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 55 Idd,A: 104 Rds(on), Ohm: 01.08.2000 Ciss, pF/Qg, nC: 5000/130 Bem.: Керування логічним рівнем JHGF: THT ZCODE: 8541290010 | auf Bestellung 109 Stück: Lieferzeit 21-28 Tag (e)erwartet 30 Stück: |
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| IRL2505PBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505PBF | IR | Транз. Пол. БМ N-HEXFET logik TO220AB Udss=55V; Id=104A; Pdmax=200W; Rds=0,008 Ohm | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505PBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505PBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 4225 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 104A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of channel: enhanced Kind of package: tube Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505PBF | International Rectifier/Infineon | N-канальний ПТ; Udss, В = 55; Id = 104; Ptot, Вт = 200; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 5000 @ 25; Qg, нКл = 130 @ 5 В; Rds = 8 мОм @ 54 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 2 В @ 250 мкА; TO-220AB | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505PBF Produktcode: 191359 | JSMicro | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 60 V Idd,A: 68 A Rds(on), Ohm: 7,5 mOhm Ciss, pF/Qg, nC: 1204/17,9 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 255 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2505PBF | Infineon Technologies | MOSFETs MOSFT 55V 104A 8mOhm 86.7nC LogLvAB | auf Bestellung 1598 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2505PBF | INFINEON | Description: INFINEON - IRL2505PBF - Leistungs-MOSFET, n-Kanal, 55 V, 104 A, 0.008 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2505PBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505PBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | auf Bestellung 7247 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2505PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 104A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of channel: enhanced Kind of package: tube Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505PBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505PBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2012 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505S | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2505S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2505S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2505SPBF Produktcode: 18630 | IR | Transistoren > MOSFET N-CH Uds,V: 55 Idd,A: 104 Rds(on), Ohm: 01.08.2000 Ciss, pF/Qg, nC: 5000/130 | Produkt ist nicht verfügbar |
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| IRL2505SPBF | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 86.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505SPBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2505SPBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRL | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505STRLPBF | INFINEON | Description: INFINEON - IRL2505STRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 104 A, 0.008 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2505STRLPBF | Infineon Technologies | MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl | auf Bestellung 2953 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2505STRLPBF | INFINEON | Description: INFINEON - IRL2505STRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 104 A, 0.008 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2505STRR | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2505STRRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703 | International Rectifier | N-MOSFET 30V 24A IRL2703 TIRL2703 Anzahl je Verpackung: 50 Stücke | auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2703 | Infineon Technologies | Trans MOSFET N-CH Si 30V 24A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF | Infineon / IR | MOSFET MOSFT 30V 24A 400mOhm 10nC LogLvAB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF | International Rectifier Corporation | auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) | ||||||||||||||||||
| IRL2703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 24A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF | INFINEON | Description: INFINEON - IRL2703PBF - Leistungs-MOSFET, n-Kanal, 30 V, 24 A, 0.04 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 24 Qualifikation: - Verlustleistung Pd: 45 Gate-Source-Schwellenspannung, max.: 1 Verlustleistung: 45 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.04 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.04 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF | Infineon Technologies | Description: MOSFET N-CH 30V 24A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF | Infineon Technologies | Trans MOSFET N-CH 30V 24A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703PBF Produktcode: 114363 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL2703S | Infineon Technologies | Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2703S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2703SPBF | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL2703SPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 24A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703SPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 40mOhms 10nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703STRL | Infineon Technologies | Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703STRR | Infineon Technologies | Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2703STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910 | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910L | Infineon Technologies | Description: MOSFET N-CH 100V 55A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910L | auf Bestellung 503 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL2910LPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910NS | IR | auf Bestellung 2470 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL2910PBF | INFINEON | Description: INFINEON - IRL2910PBF - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (23-Jan-2024) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910 Produktcode: 99525 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 Idd,A: 55 Rds(on), Ohm: 0.026 Ciss, pF/Qg, nC: 3700/140 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 52 Stück: Lieferzeit 21-28 Tag (e) |
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| IRL2910PBF | Infineon Technologies | Description: MOSFET N-CH 100V 55A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910PBF | Infineon Technologies | MOSFET MOSFT 48A 93.3nC 26mOhm LogLvAB | auf Bestellung 2161 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2910PBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910PBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2910S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2910S | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2910S | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL2910SHR | IR - ASA only Supplier | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910SHR | International Rectifier | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK | auf Bestellung 7147 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910SHR | International Rectifier | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK | auf Bestellung 7147 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910SPBF Produktcode: 118889 | IR | Transistoren > MOSFET N-CH Gehäuse: D2PAK (TO-263) Uds,V: 100 V Idd,A: 55 A Rds(on), Ohm: 0,025 Ohm Bem.: Керування логічним рівнем JHGF: SMD | auf Bestellung 7 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL2910SPBF | Infineon Technologies | Description: MOSFET N-CH 100V 55A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910SPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910SPBF | International Rectifier HiRel Products | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910SPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRL | Infineon | Transistor N-MOSFET; 100V; 16V; 40mOhm; 55A; 200W; -55°C ~ 175°C; Replacement: IRL2910S; IRL2910STRL; IRL2910STRR; IRL2910S-GURT; IRL2910S; IRL2910STRL TIRL2910s Anzahl je Verpackung: 10 Stücke | auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2910STRL | Infineon Technologies | Description: MOSFET N-CH 100V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRL | Infineon | Transistor N-MOSFET; 100V; 16V; 40mOhm; 55A; 200W; -55°C ~ 175°C; Replacement: IRL2910S; IRL2910STRL; IRL2910STRR; IRL2910S-GURT; IRL2910S; IRL2910STRL TIRL2910s Anzahl je Verpackung: 10 Stücke | auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL2910STRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 55A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | auf Bestellung 7222 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2910STRLPBF | INFINEON | Description: INFINEON - IRL2910STRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | MOSFETs MOSFT 100V 55A 26mOhm 93.3nC LogLvl | auf Bestellung 2612 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2910STRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL2910STRLPBF | INFINEON TECHNOLOGIES | IRL2910STRLPBF SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2910STRLPBF | INFINEON | Description: INFINEON - IRL2910STRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 11200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2910STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 11200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL2910STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 100V 55A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL2910STRRPBF | Infineon Technologies | Description: MOSFET N-CH 100V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910STRRPBF | Infineon Technologies | MOSFET PLANAR >= 100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL2910SZ | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3102 | Infineon Technologies | Description: MOSFET N-CH 20V 61A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3102L | Vishay Siliconix | Description: MOSFET N-CH 20V 61A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102PBF | Infineon Technologies | Trans MOSFET N-CH 20V 61A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102PBF | IR | auf Bestellung 8750 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3102PBF | Infineon Technologies | Description: MOSFET N-CH 20V 61A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102PBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 15mOhms 38.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102S | Infineon Technologies | Description: MOSFET N-CH 20V 61A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3102S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3102S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3102SPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 61A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 61A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102STRL | Infineon Technologies | Description: MOSFET N-CH 20V 61A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102STRLPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 61A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102STRR | Infineon Technologies | Description: MOSFET N-CH 20V 61A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3102STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103 Produktcode: 189656 | JSMicro | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 30 V Idd,A: 64 A Rds(on), Ohm: 12 mOhm Ciss, pF/Qg, nC: 12 mOhm JHGF: THT | auf Bestellung 216 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103 | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103 Produktcode: 7965 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 20 Idd,A: 61 Rds(on), Ohm: 0.013 Ciss, pF/Qg, nC: 2500/58 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 12 Stück: Lieferzeit 21-28 Tag (e) |
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| IRL3103D1 | Infineon Technologies | Description: MOSFET N-CH 30V 64A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1PBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1PBF | Infineon Technologies | Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1S | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103D1SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRL | IOR | 2000 | auf Bestellung 760 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103D1STRL | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRLP | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRLP | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRLP | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRR | Vishay | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRR | Vishay Siliconix | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D1STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2 | Infineon Technologies | Description: MOSFET N-CH 30V 54A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2PBF | Infineon Technologies | Description: MOSFET N-CH 30V 54A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Power Dissipation (Max): 2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2S | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2S | Infineon Technologies | Description: MOSFET N-CH 30V 54A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2STRL | Infineon Technologies | Description: MOSFET N-CH 30V 54A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103D2STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103L | Infineon Technologies | Description: MOSFET N-CH 30V 64A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103LHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103LPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103LPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103LPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103PBF | Infineon Technologies | MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103PBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103PBF Produktcode: 52399 | IR | Transistoren > MOSFET N-CH Uds,V: 30 V Idd,A: 64 A Rds(on), Ohm: 12 mOhm Ciss, pF/Qg, nC: 1650/33 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103PBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL3103PBF - IRL3103 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3103PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103S Produktcode: 24772 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3103S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103S | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103S | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SHR | IR - ASA only Supplier | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SHR | International Rectifier | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 12mOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103SPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRL | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRL | IR | 01+ TO263 | auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103STRL | IOR | 2000 | auf Bestellung 1130 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 135329 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3103STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRLPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL3103STRLPBF - IRL3103 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | auf Bestellung 160878 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3103STRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 24913 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3103STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRLPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRR | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRR | HARRIS | 2001 | auf Bestellung 680 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3103STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRRPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3103STRRPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3104S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3202L | Vishay Siliconix | Description: MOSFET N-CH 20V 48A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3202PBF | Infineon Technologies | Trans MOSFET N-CH 20V 48A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3202PBF | Infineon Technologies | Description: MOSFET N-CH 20V 48A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3202PBF Produktcode: 56364 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3202S | Infineon Technologies | Description: MOSFET N-CH 20V 48A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3202S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3202S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3202STRR | Infineon Technologies | Description: MOSFET N-CH 20V 48A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3215 | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3215 | Infineon Technologies | Description: MOSFET N-CH 150V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 166mOhm @ 7.2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3215 Produktcode: 55948 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3215HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3215PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3215PBF | IR - ASA only Supplier | Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3215PBF | International Rectifier | Trans MOSFET N-CH Si 150V 12A 3-Pin(3+Tab) TO-220AB | auf Bestellung 11212 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3215PBF | Infineon Technologies | Trans MOSFET N-CH Si 150V 12A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302 | Infineon Technologies | Description: MOSFET N-CH 20V 39A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302L | Vishay / Siliconix | MOSFET Discrete Semiconductor Products | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302L | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302L | Vishay Siliconix | Description: MOSFET N-CH 20V 39A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302PBF | Infineon Technologies | Description: MOSFET N-CH 20V 39A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3302S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3302S | Infineon Technologies | Description: MOSFET N-CH 20V 39A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 39A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302SPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 23mOhms 8.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 39A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302ST | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRL | Infineon Technologies | Description: MOSFET N-CH 20V 39A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRLPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 23mOhms 20.7nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 39A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRLPBF | Infineon Technologies | Trans MOSFET N-CH 20V 39A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRR | Infineon Technologies | Description: MOSFET N-CH 20V 39A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3302STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303 | IR | TO-220 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3303 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3303 | Infineon Technologies | Description: MOSFET N-CH 30V 38A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303 | IR | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3303D1 | Infineon Technologies | Description: MOSFET N-CH 30V 38A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1S | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1S Produktcode: 79756 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak Uds,V: 30 V Idd,A: 27 A Rds(on), Ohm: 0.026 Bem.: Керування логічним рівнем JHGF: SMD | verfügbar 5 Stück: |
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| IRL3303D1S | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1SPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRL | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRR | Vishay Siliconix | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303D1STRR | Vishay / Siliconix | MOSFET Discrete Semiconductor Products | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303L | Infineon Technologies | Description: MOSFET N-CH 30V 38A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303LPBF | Infineon / IR | MOSFET MOSFT 30V 38A 26mOhm 17.3nC LogLvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303LPBF | Infineon Technologies | Description: MOSFET N-CH 30V 38A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303LPBF | Infineon Technologies | Trans MOSFET N-CH 30V 38A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303PBF | Infineon Technologies | Description: MOSFET N-CH 30V 38A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303PBF | Infineon Technologies | Trans MOSFET N-CH 30V 38A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303PBF | IR | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3303PBF | Infineon / IR | MOSFET MOSFT 30V 34A 17.3nC 26mOhm LogLvAB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3303S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3303S | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3303SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303SPBF | Infineon / IR | MOSFET MOSFT 30V 38A 26mOhm 17.3nC LogLvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303SPBF | Infineon Technologies | Trans MOSFET N-CH 30V 38A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRL | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRR | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3303STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3402 | Infineon Technologies | Description: MOSFET N-CH 20V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402L | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402L | Vishay / Siliconix | MOSFET Discrete Semiconductor Products | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402L | Vishay Siliconix | Description: MOSFET N-CH 20V 85A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402PBF | Infineon Technologies | Trans MOSFET N-CH 20V 85A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402PBF | Infineon Technologies | Description: MOSFET N-CH 20V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402PBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 10mOhms 52nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402S | Infineon Technologies | Description: MOSFET N-CH 20V 85A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3402S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3402SPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 85A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 85A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402STRL | Infineon Technologies | Description: MOSFET N-CH 20V 85A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 85A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402STRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402STRR | Infineon Technologies | Description: MOSFET N-CH 20V 85A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3402STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502 | Infineon Technologies | Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502 | auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3502 | Infineon Technologies | Description: MOSFET N-CH 20V 110A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502L | Vishay / Siliconix | MOSFET Discrete Semiconductor Products | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502L | Vishay Siliconix | Description: MOSFET N-CH 20V 110A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502L | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502PBF | IR - ASA only Supplier | Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502PBF | Infineon Technologies | Description: MOSFET N-CH 20V 110A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502PBF | Infineon Technologies | Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502PBF | International Rectifier | Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB | auf Bestellung 4206 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3502PBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3502S | Infineon Technologies | Description: MOSFET N-CH 20V 110A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502SPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 110A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRR | Infineon Technologies | Description: MOSFET N-CH 20V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3502STRRPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705 | IR | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3705 | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705N | International Rectifier | Transistor N-Channel MOSFET; 55V; 16V; 18mOhm; 89A; 170W; -55°C ~ 175°C; IRL3705N TIRL3705n Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3705N | IR - ASA only Supplier | Trans MOSFET N-CH Si 55V 89A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NL | Infineon Technologies | Description: MOSFET N-CH 55V 89A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NL | auf Bestellung 1222 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3705NLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 89A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NLPBF Produktcode: 28463 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-262 Uds,V: 55 Idd,A: 89 Rds(on), Ohm: 01.01.2000 Ciss, pF/Qg, nC: 3600/98 JHGF: THT | Produkt ist nicht verfügbar |
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| IRL3705NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB Case: TO220AB Drain-source voltage: 55V Drain current: 89A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: logic level Gate charge: 65.3nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±16V Mounting: THT Anzahl je Verpackung: 1 Stücke | auf Bestellung 201 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3705NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB Case: TO220AB Drain-source voltage: 55V Drain current: 89A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: logic level Gate charge: 65.3nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±16V Mounting: THT | auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NPBF Produktcode: 24017 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-262 Uds,V: 55 Idd,A: 89 Rds(on), Ohm: 01.01.2000 Ciss, pF/Qg, nC: 3600/98 Bem.: Керування логічним рівнем JHGF: THT | verfügbar 521 Stück: 6 Stück - stock Köln515 Stück - lieferbar in 3-4 Wochen |
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| IRL3705NPBF | Infineon Technologies | MOSFETs MOSFT 55V 77A 65.3nC 10mOhm LogLvAB | auf Bestellung 1999 Stücke: Lieferzeit 80-84 Tag (e) |
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| IRL3705NPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NPBF | IR | Транз. Пол. БМ N-HEXFET TO220AB Udss=55V; Id=77A; Pdmax=130W; Rds=0,01 Ohm | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3288 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NPBF | Infineon Technologies | Description: MOSFET N-CH 55V 89A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NPBF | INFINEON | Description: INFINEON - IRL3705NPBF - Leistungs-MOSFET, n-Kanal, 55 V, 77 A, 0.01 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 77A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 130W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NPBF/IR | IR | 08+; | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705NS | IRL3705NS Транзисторы HEXFET | auf Bestellung 1019 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRL3705NS | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NS Produktcode: 37577 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3705NSPBF | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSPBF | Infineon | Транз. Пол. БМ N-MOSFET D2PAK Udss=55V; Id=89A; Pdmax=130W; Rds=0,01 Ohm | auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NSTRL | Infineon Technologies | Trans MOSFET N-CH Si 55V 89A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 645 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NSTRLPBF | INFINEON | Description: INFINEON - IRL3705NSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 89 A, 0.01 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 89A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NSTRLPBF | International Rectifier Corporation | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl, TO-252-3 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | INFINEON | Description: INFINEON - IRL3705NSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 89 A, 0.01 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 89A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NSTRLPBF | Infineon | Транз. Пол. БМ N-MOSFET D2PAK Udss=55V; Id=89A; Pdmax=130W; Rds=0,018 Ohm, Logic Level | auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705NSTRLPBF | Infineon Technologies | MOSFETs MOSFT 55V 89A 10mOhm 65.3nC LogLvl | auf Bestellung 657 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705NSTRR | Infineon Technologies | Description: MOSFET N-CH 55V 89A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705NSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705PBF | IR | TO-220AB | auf Bestellung 4939 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705Z | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705Z Produktcode: 99526 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 55 Idd,A: 75 Rds(on), Ohm: 8 mOhm Ciss, pF/Qg, nC: 2880/40 JHGF: THT | Produkt ist nicht verfügbar |
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| IRL3705Z | International Rectifier | Trans MOSFET N-CH Si 55V 86A 3-Pin(3+Tab) TO-220AB IRL3705Z TIRL3705z Anzahl je Verpackung: 10 Stücke | auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3705ZL | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZLPBF | Infineon Technologies | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | auf Bestellung 1018 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZPBF Produktcode: 113435 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 55 V Idd,A: 75 A Rds(on), Ohm: 8 mOhm Ciss, pF/Qg, nC: 2880/40 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 89 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705ZPBF | Infineon Technologies | MOSFETs MOSFT 55V 86A 8mOhm 40nC Log LvlAB | auf Bestellung 1027 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 741 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZPBF | INFINEON | Description: INFINEON - IRL3705ZPBF - Leistungs-MOSFET, n-Kanal, 55 V, 86 A, 0.008 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 86A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 130W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1305 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705ZPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 399 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705ZPBF | International Rectifier | Description: IRL3705 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | auf Bestellung 5004 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZS | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZS | IR | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3705ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705ZS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3705ZSPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZSPBF Produktcode: 26657 | IR | Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 55 V Idd,A: 75 A Rds(on), Ohm: 8 mOhm Ciss, pF/Qg, nC: 2880/40 JHGF: SMD | Produkt ist nicht verfügbar |
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| IRL3705ZSPBF | Infineon / IR | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | auf Bestellung 409 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL3705ZSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 86A Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | MOSFETs MOSFT 55V 86A 8mOhm 40nC Log Lvl | auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZSTRLPBF | INFINEON | Description: INFINEON - IRL3705ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0065 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 130W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | auf Bestellung 1379 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZSTRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 86A Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3705ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3705ZSTRLPBF | INFINEON | Description: INFINEON - IRL3705ZSTRLPBF - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0065 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 130W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3713 | International Rectifier | N-MOSFET 260A 30V 330W 0.003Ω IRL3713 TIRL3713 Anzahl je Verpackung: 5 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3713 | International Rectifier | N-MOSFET 260A 30V 330W 0.003Ω IRL3713 TIRL3713 Anzahl je Verpackung: 5 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3713 | Infineon / IR | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713L(94-2390) | auf Bestellung 7095 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3713PBF | Infineon Technologies | Description: MOSFET N-CH 30V 260A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713PBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713PBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3713PBF | Infineon Technologies | MOSFETs MOSFT 30V 200A 3mOhm 75nC Log LvlAB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713PBF Produktcode: 35005 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 30 Idd,A: 260 Rds(on), Ohm: 01.03.2000 Ciss, pF/Qg, nC: 5890/110 Bem.: Керування логічним рівнем JHGF: THT | verfügbar 8 Stück: 6 Stück - stock Köln2 Stück - lieferbar in 3-4 Wochen |
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| IRL3713PBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3713PBF Produktcode: 198923 | VBsemi | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 30 V Idd,A: 260 A Rds(on), Ohm: 0,003 Ohm Ciss, pF/Qg, nC: 5890/110 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 77 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3713S | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713SPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713SPBF Produktcode: 28823 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3713SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 260A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRL | IOR | auf Bestellung 97 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3713STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRLPBF | Infineon / IR | MOSFET MOSFT 30V 200A 3mOhm 75nC Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 260A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 260A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3713STRRPBF | Infineon / IR | MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714 | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3714L | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714L | auf Bestellung 5950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3714LPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714PBF | Infineon Technologies | Trans MOSFET N-CH 20V 36A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714PBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714S | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3714S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3714SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714STR | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714STRL | auf Bestellung 11300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3714STRL | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714STRR | auf Bestellung 2422 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3714STRR | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714STRRPBF | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3714STRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714TR | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO220AB Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714Z | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZL | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZPBF | Infineon Technologies | Trans MOSFET N-CH 20V 36A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3714ZS | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3714ZSPBF | Infineon Technologies | Trans MOSFET N-CH 20V 36A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRL | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 20V 36A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRR | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3714ZSTRRPBF | Infineon Technologies | Trans MOSFET N-CH 20V 36A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715 | auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3715 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715 | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715L | IOR | D-PAK | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715L | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715L | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715LPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715LPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715PBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715PBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715S | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715S | IR | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715S | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715SPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 14mOhms 11nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 54A 3-Pin(2+Tab) D2PAK | auf Bestellung 1171 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3715SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRL | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRR | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715STRRPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 14mOhms 11nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TR | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRL | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRR | Infineon Technologies | Description: MOSFET N-CH 20V 54A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715TRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715Z | Infineon Technologies | Description: MOSFET N-CH 20V 50A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715Z | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3715ZCLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715ZCS | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRL | IOR | 2003 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715ZCSTRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRLP | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRLP | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRRP | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZCSTRRP | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZL | Infineon Technologies | Description: MOSFET N-CH 20V 50A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZLPBF | Infineon / IR | MOSFET MOSFT 20V 50A 11mOhm 7nC Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A TO262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZPBF | Infineon Technologies | Trans MOSFET N-CH 20V 50A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZPBF | Infineon / IR | MOSFET MOSFT 20V 50A 7nC 11mOhm Qg log lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715ZS | IR | 04+ | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3715ZS | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSPBF | Infineon / IR | MOSFET MOSFT 20V 50A 11mOhm 7nC Qg Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSPBF | Infineon Technologies | Trans MOSFET N-CH 20V 50A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSTRL | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSTRR | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3715ZSTRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 50A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716 | Infineon Technologies | Description: MOSFET N-CH 20V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716L | International Rectifier | N-MOSFET 180A 20V 210W 0.004Ω IRL3716L TIRL3716l Anzahl je Verpackung: 11 Stücke | auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3716LPBF | Infineon Technologies | Description: MOSFET N-CH 20V 180A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716LPBF | Infineon Technologies | Trans MOSFET N-CH 20V 180A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716LPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716PBF Produktcode: 98084 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL3716PBF | Infineon Technologies | Trans MOSFET N-CH 20V 180A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716PBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716PBF | INFINEON | Description: INFINEON - IRL3716PBF - Leistungs-MOSFET, n-Kanal, 20 V, 180 A, 0.004 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 180 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 210 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.004 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 3 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716PBF | Infineon Technologies | Description: MOSFET N-CH 20V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716S | Infineon Technologies | Description: MOSFET N-CH 20V 180A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716S | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3716S | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3716SHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716SPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716SPBF | Infineon Technologies | Trans MOSFET N-CH 20V 180A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716SPBF | Infineon Technologies | Description: MOSFET N-CH 20V 180A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRLPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRLPBF | Infineon Technologies | Trans MOSFET N-CH 20V 180A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 180A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3716STRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3717S | IR | TO-263 | auf Bestellung 9600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3717S | IR | 07+ TO-263 | auf Bestellung 9600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3803 | Infineon Technologies | Description: MOSFET N-CH 30V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803 | International Rectifier | Transistor N-Channel MOSFET; 30V; 16V; 9mOhm; 140A; 200W; -55°C ~ 175°C; IRL3803 TIRL3803 Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3803LPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803LPBF | Infineon / IR | MOSFET MOSFT 30V 140A 6mOhm 93.3nC Log Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803LPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: THT Gate charge: 93.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2043 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803PBF | INFINEON | Description: INFINEON - IRL3803PBF - Leistungs-MOSFET, n-Kanal, 30 V, 120 A, 0.006 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 821 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3803PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2814 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803PBF | Infineon Technologies | MOSFETs MOSFT 30V 120A 6mOhm 93.3nC LogLvAB | auf Bestellung 1426 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803PBF | IRL3803PBF Транзисторы HEXFET | auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| IRL3803PBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803PBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803PBF Produktcode: 28690 | IR | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 30 Idd,A: 140 Rds(on), Ohm: 01.06.2000 Ciss, pF/Qg, nC: 5000/140 Bem.: Керування логічним рівнем JHGF: THT | auf Bestellung 99 Stück: Lieferzeit 21-28 Tag (e)erwartet 10 Stück: |
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| IRL3803PBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803PBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: THT Gate charge: 93.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803S | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803S | International Rectifier | Transistor N-Channel MOSFET; 30V; 16V; 9mOhm; 140A; 200W; -55°C ~ 175°C; IRL3803S smd TIRL3803s Anzahl je Verpackung: 5 Stücke | auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL3803SPB | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3803SPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803SPBF | IR | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3803STRL | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRL | IR | 04+ TO-263 | auf Bestellung 389 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3803STRL | IR | TO263 | auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3803STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRLPBF | INFINEON | Description: INFINEON - IRL3803STRLPBF - Leistungs-MOSFET, n-Kanal, 30 V, 140 A, 0.006 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 140A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3803STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | auf Bestellung 2597 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 140A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRLPBF | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 140A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRLPBF | INFINEON | Description: INFINEON - IRL3803STRLPBF - Leistungs-MOSFET, n-Kanal, 30 V, 140 A, 0.006 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 140A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3803STRLPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803STRLPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL3803STRLPBF | Infineon Technologies | MOSFETs MOSFT 30V 140A 6mOhm 93.3nC Log Lvl | auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803STRR | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRRPBF | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3803STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL3803STRRPBF | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRRPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRRPBF | Infineon Technologies | Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803STRRPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL3803STRRPBF - IRL3803STR - PLANAR <40V tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL3803VL | auf Bestellung 1622 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL3803VPBF | Infineon / IR | MOSFET MOSFT 140A 50.7nC 5.5mOhm LogLvAB | auf Bestellung 1259 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL3803VPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VPBF | INFINEON | Description: INFINEON - IRL3803VPBF - Leistungs-MOSFET, n-Kanal, 30 V, 140 A, 0.0055 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 140 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 200 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0055 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1 SVHC: No SVHC (15-Jan-2019) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3803VS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | Description: MOSFET N-CH 30V 140A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VSPBF | IR | auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 140A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B209 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL40B209 - IRL40B209 - TRENCH < 40V tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40B209 | Infineon Technologies | MOSFETs 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lv | auf Bestellung 3032 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40B209 Produktcode: 168507 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL40B209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40B209 | Infineon Technologies | Description: MOSFET N-CH 40V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1042 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40B212 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B212 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B212 | Infineon Technologies | Description: MOSFET N-CH 40V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B212 | INFINEON | Description: INFINEON - IRL40B212 - Leistungs-MOSFET, n-Kanal, 40 V, 195 A, 0.0015 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 195 Qualifikation: - Verlustleistung Pd: 231 Gate-Source-Schwellenspannung, max.: 2.4 Verlustleistung: 231 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0015 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40B212 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B212 | Infineon Technologies | MOSFETs 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40B215 | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B215 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL40B215 - IRL40B215 12V-300V N-CHANNEL POWER MOSF tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 8025 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40B215 | Infineon Technologies | Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40B215 | Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | auf Bestellung 709 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40B215 | Infineon Technologies | Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40B215 | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V | auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40DM247 | Infineon Technologies | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40DM247XTMA1 | Infineon Technologies | TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40DM247XTMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-8-904 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40DM247XTMA1 | Infineon Technologies | Trans MOSFET N-CH Si 40V 44A 10-Pin Direct-FET ME T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40DM247XTMA1 | Infineon Technologies | MOSFETs Y | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40DM247XTMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-8-904 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V | auf Bestellung 4975 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40DM247XTMA1 | Infineon Technologies | Trans MOSFET N-CH Si 40V 44A 10-Pin Direct-FET ME T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212 | Infineon Technologies | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212 | Infineon Technologies | Description: MOSFET N-CH 40V 195A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212ARMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40S212ARMA1 | Infineon Technologies | N-Channel MOSFET Transistor | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212ARMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V | auf Bestellung 24482 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40S212ARMA1 | Infineon Technologies | Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40S212ARMA1 | Infineon Technologies | MOSFETs N | auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40SC209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 478A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC209 | Infineon Technologies | Description: MOSFET N-CH 40V 478A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 478A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 478A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC209 | Infineon Technologies | MOSFETs TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC209 | INFINEON | Description: INFINEON - IRL40SC209 - Leistungs-MOSFET, n-Kanal, 40 V, 478 A, 600 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 478A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 600µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 689 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 478A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC209 | Infineon Technologies | Description: MOSFET N-CH 40V 478A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 478A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC209 | INFINEON | Description: INFINEON - IRL40SC209 - Leistungs-MOSFET, n-Kanal, 40 V, 478 A, 600 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 478A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 600µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 689 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC209 | Infineon Technologies | Trans MOSFET N-CH Si 40V 478A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Description: MOSFET N-CH 40V 557A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 557A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V | auf Bestellung 2329 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40SC228 | Infineon | auf Bestellung 363200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | INFINEON | Description: INFINEON - IRL40SC228 - Leistungs-MOSFET, n-Kanal, 40 V, 360 A, 500 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 360A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 416W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Description: MOSFET N-CH 40V 557A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 557A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40SC228 | INFINEON | Description: INFINEON - IRL40SC228 - Leistungs-MOSFET, n-Kanal, 40 V, 360 A, 500 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 360A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 416W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40SC228 Produktcode: 204213 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IRL40SC228 | Infineon Technologies | Trans MOSFET N-CH 40V 557A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 2677 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40SC228 | Infineon Technologies | MOSFETs TRENCH <= 40V | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40T209 | Infineon Technologies | MOSFETs TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA1 | INFINEON | Description: INFINEON - IRL40T209ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 300 A, 720 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500W Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 500W Bauform - Transistor: HSOF Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: StrongIRFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 590µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 720µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 7970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies | MOSFETs TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA1 | INFINEON | Description: INFINEON - IRL40T209ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 300 A, 720 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 500W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: StrongIRFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 720µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 7970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies | Trans MOSFET N-CH Si 40V 586A 9-Pin(8+Tab) HSOF T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 300A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-HSOF-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies | Trans MOSFET N-CH Si 40V 586A 9-Pin(8+Tab) HSOF T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA2 | Infineon Technologies | Trans MOSFET N-CH Si 40V 586A 9-Pin(8+Tab) HSOF T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA2 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA2 | Infineon Technologies | Trans MOSFET N-CH Si 40V 586A 9-Pin(8+Tab) HSOF T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL40T209ATMA2 | Infineon Technologies | MOSFETs TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT IRL5 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510 | Siliconix | N-MOSFET 100V 5.6A IRL510 TIRL510 Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL510 | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510 | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510A | onsemi | Description: MOSFET N-CH 100V 5.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 2.8A, 5V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510A | ON Semiconductor | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220 Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510L | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510L | auf Bestellung 6050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IRL510L | Vishay / Siliconix | MOSFET N-Chan 100V 5.6 Amp | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510PBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | auf Bestellung 11196 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL510PBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | auf Bestellung 3776 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL510PBF | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL510PBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL510PBF | Vishay Semiconductors | MOSFETs TO220 100V 5.6A N-CH MOSFET | auf Bestellung 5225 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510PBF | VISHAY | Description: VISHAY - IRL510PBF - Leistungs-MOSFET, n-Kanal, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 43W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.54ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 3590 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL510PBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510PBF | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | auf Bestellung 7280 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510PBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | auf Bestellung 3775 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL510PBF | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 745 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL510PBF-BE3 | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510PBF-BE3 | Vishay / Siliconix | MOSFETs TO220 100V 5.6A N-CH MOSFET | auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510PBF-BE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510S | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510SPBF | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510SPBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510SPBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510SPBF | Vishay Semiconductors | MOSFETs N-Chan 100V 5.6 Amp | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRL | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRLPBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRLPBF | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | auf Bestellung 601 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510STRLPBF | Vishay | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRLPBF | Vishay Semiconductors | MOSFETs N-Chan 100V 5.6 Amp | auf Bestellung 763 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL510STRLPBF | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 18A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 18A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRLPBF | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRLPBF | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 18A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 18A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRR | Vishay Siliconix | Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL510STRRPBF | Vishay / Siliconix | MOSFETs N-Chan 100V 5.6 Amp | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520 | Vishay Siliconix | Description: MOSFET N-CH 100V 9.2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT IRL5 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520 | Vishay | Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520L | Vishay Siliconix | Description: MOSFET N-CH 100V 9.2A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520LPBF | Vishay Semiconductors | MOSFET N-Chan 100V 9.2 Amp | auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL520LPBF | Vishay Siliconix | Description: MOSFET N-CH 100V 9.2A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL520LPBF | Vishay | Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520N | International Rectifier | N-MOSFET HEXFET 100V 10A 48W 0.180Ω IRL520N TIRL520n Anzahl je Verpackung: 50 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL520N Produktcode: 440 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar |
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| IRL520N | International Rectifier | N-MOSFET HEXFET 100V 10A 48W 0.180Ω IRL520N TIRL520n Anzahl je Verpackung: 50 Stücke | auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL520NL | Infineon Technologies | Description: MOSFET N-CH 100V 10A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-262 | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1361 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NPBF | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IRL520NPBF - IRL520N 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level Gate charge: 13.3nC Technology: HEXFET® Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 354 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL520NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL520NPBF | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level Gate charge: 13.3nC Technology: HEXFET® Kind of package: tube | auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL520NPBF | Infineon Technologies | MOSFETs MOSFT 10A 13.3nC 180mOhm LogLvAB | auf Bestellung 4028 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL520NPBF | Infineon Technologies | Description: MOSFET N-CH 100V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NS | IR | TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL520NS | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NS | IR | 07+ TO-263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL520NS | IR | 05+ | auf Bestellung 35 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IRL520NSPBF | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IRL520NSPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NSPBF | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NSTRL | Infineon | N-MOSFET HEXFET 100V 10A 3.8W 0.18Ω IRL520NS TIRL520ns Anzahl je Verpackung: 10 Stücke | auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL520NSTRL | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NSTRL | Infineon | N-MOSFET HEXFET 100V 10A 3.8W 0.18Ω IRL520NS TIRL520ns Anzahl je Verpackung: 10 Stücke | auf Bestellung 388 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRL520NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NSTRLPBF | INFINEON | Description: INFINEON - IRL520NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.18 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2244 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 701 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL520NSTRLPBF | INFINEON | Description: INFINEON - IRL520NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.18 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2244 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies | MOSFETs MOSFT 100V 10A 180mOhm 13.3nC LogLv | auf Bestellung 25550 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL520NSTRR | Infineon Technologies | Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IRL520PBF | VISHAY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.27Ω Mounting: THT Kind of channel: enhanced Gate charge: 12nC Kind of package: tube | auf Bestellung 507 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL520PBF | Vishay | Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB | auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IRL520PBF | Vishay | Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB | auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |