IRL3402PBF Infineon Technologies
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Technische Details IRL3402PBF Infineon Technologies
Description: MOSFET N-CH 20V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V.
Weitere Produktangebote IRL3402PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL3402PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V |
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IRL3402PBF | Hersteller : Infineon / IR | MOSFET 20V 1 N-CH HEXFET 10mOhms 52nC |
Produkt ist nicht verfügbar |