Technische Details IRL3705ZSPBF Infineon / IR
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V.
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IRL3705ZSPBF Produktcode: 26657 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak (TO-263-3) Uds,V: 55 V Idd,A: 75 A Rds(on), Ohm: 8 mOhm Ciss, pF/Qg, nC: 2880/40 JHGF: SMD |
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IRL3705ZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
Produkt ist nicht verfügbar |