IRL1404ZSPBF Infineon Technologies
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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404+ | 1.52 EUR |
500+ | 1.40 EUR |
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Technische Details IRL1404ZSPBF Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IRL1404ZSPBF nach Preis ab 1.48 EUR bis 1.54 EUR
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IRL1404ZSPBF Produktcode: 27885 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: D2Pak (TO-263-3) Uds,V: 40 V Idd,A: 120 A Rds(on), Ohm: 3,1 mOhm Ciss, pF/Qg, nC: 5080/75 Bem.: Управління логічним рівнем JHGF: SMD |
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IRL1404ZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL1404ZSPBF | Hersteller : Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC |
Produkt ist nicht verfügbar |