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IRL1104STRLPBF

IRL1104STRLPBF Infineon Technologies


irl1104spbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 104A 3-Pin(2+Tab) D2PAK T/R
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Technische Details IRL1104STRLPBF Infineon Technologies

Description: MOSFET N-CH 40V 104A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V, Power Dissipation (Max): 2.4W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V.

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IRL1104STRLPBF IRL1104STRLPBF Hersteller : Infineon Technologies IRL1104(S,L)PbF.pdf Description: MOSFET N-CH 40V 104A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRL1104STRLPBF IRL1104STRLPBF Hersteller : Infineon / IR irl1104spbf-1169473.pdf MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
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