IRL1104STRLPBF Infineon Technologies
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Technische Details IRL1104STRLPBF Infineon Technologies
Description: MOSFET N-CH 40V 104A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V, Power Dissipation (Max): 2.4W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V.
Weitere Produktangebote IRL1104STRLPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL1104STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 104A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V |
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IRL1104STRLPBF | Hersteller : Infineon / IR | MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC |
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