Produkte > INFINEON TECHNOLOGIES > IRL40S212ARMA1
IRL40S212ARMA1

IRL40S212ARMA1 Infineon Technologies

Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.84 EUR
1600+1.71 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details IRL40S212ARMA1 Infineon Technologies

Description: MOSFET N-CH 40V 195A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 150µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V.

Weitere Produktangebote IRL40S212ARMA1 nach Preis ab 1.78 EUR bis 5.30 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRL40S212ARMA1 IRL40S212ARMA1 Hersteller : Infineon Technologies Infineon_IRL40S212_DataSheet_v01_00_EN-3363421.pdf MOSFETs N
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.00 EUR
10+3.33 EUR
100+2.64 EUR
250+2.50 EUR
500+2.29 EUR
800+1.88 EUR
2400+1.78 EUR
IRL40S212ARMA1 IRL40S212ARMA1 Hersteller : Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
auf Bestellung 24482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
10+3.44 EUR
100+2.39 EUR
Mindestbestellmenge: 4
IRL40S212ARMA1 Hersteller : Infineon Technologies infineon-irl40s212-datasheet-v01_00-en.pdf N-Channel MOSFET Transistor
Produkt ist nicht verfügbar
IRL40S212ARMA1 IRL40S212ARMA1 Hersteller : Infineon Technologies infineon-irl40s212-datasheet-v01_00-en.pdf Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar