Produkte > APT
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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APT-106 | Abracon Corporation | Telecom Transformer 1CT:1CT 1.5Ohm Prim. DCR 1.5Ohm Sec. DCR 16 Terminal Gull Wing SMD | Produkt ist nicht verfügbar | |||||||||||||||||
APT-106 | ABRACON | Audio Transformers / Signal Transformers 10/100Base-T Single Port LAN Transformer Extended Temperature | Produkt ist nicht verfügbar | |||||||||||||||||
APT-106 | Abracon LLC | Description: LAN XFRMR 10/100 1PORT EXT-TEMP Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT-106-T | ABRACON | Audio Transformers / Signal Transformers LAN XFRMR 10/100 1PORT EXT-TEMP | Produkt ist nicht verfügbar | |||||||||||||||||
APT-106-T | Abracon LLC | Description: LAN XFRMR 10/100 1PORT EXT-TEMP Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
APT-10A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 10A; 48VDC; automotive; 9.1mm; MICRO2 Current rating: 10A Manufacturer series: MICRO2 Kind of fuse: automotive Colour: red Rated voltage: 48V DC Breaking capacity: 1kA / 48V DC Type of fuse: fuse Fuse size: 9.1mm Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-10A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 10A; 48VDC; automotive; 9.1mm; MICRO2 Current rating: 10A Manufacturer series: MICRO2 Kind of fuse: automotive Colour: red Rated voltage: 48V DC Breaking capacity: 1kA / 48V DC Type of fuse: fuse Fuse size: 9.1mm | Produkt ist nicht verfügbar | |||||||||||||||||
APT-10A | OptiFuse | Description: FUSE AUTO 10A 48VDC BLADE MICRO | auf Bestellung 3541 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-15A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 15A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 15A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: blue | Produkt ist nicht verfügbar | |||||||||||||||||
APT-15A | OptiFuse | Description: FUSE AUTO 15A 48VDC BLADE MICRO | auf Bestellung 2310 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-15A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 15A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 15A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: blue Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-2012SRC-PRV | Kingbright | LED Low-Power Uni-Color SB. Red 655nm 1.85V 2-Pin Chip LED T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT-20A | OptiFuse | Description: FUSE AUTO 20A 48VDC BLADE MICRO | auf Bestellung 3701 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-20A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 20A; 48VDC; automotive; 9.1mm; MICRO2 Manufacturer series: MICRO2 Breaking capacity: 1kA / 48V DC Type of fuse: fuse Fuse size: 9.1mm Kind of fuse: automotive Colour: yellow Rated voltage: 48V DC Current rating: 20A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-20A | OPTIFUSE | APT-20A | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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APT-20A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 20A; 48VDC; automotive; 9.1mm; MICRO2 Manufacturer series: MICRO2 Breaking capacity: 1kA / 48V DC Type of fuse: fuse Fuse size: 9.1mm Kind of fuse: automotive Colour: yellow Rated voltage: 48V DC Current rating: 20A | Produkt ist nicht verfügbar | |||||||||||||||||
APT-25A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 25A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 25A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: colourless | Produkt ist nicht verfügbar | |||||||||||||||||
APT-25A | OptiFuse | Description: FUSE AUTO 25A 48VDC BLADE MICRO | auf Bestellung 1887 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-25A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 25A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 25A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: colourless Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-30A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 30A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 30A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: green | Produkt ist nicht verfügbar | |||||||||||||||||
APT-30A | OptiFuse | Description: FUSE AUTO 30A 48VDC BLADE MICRO Packaging: Bulk Package / Case: Blade, Micro Color: Green Size / Dimension: 0.358" L x 0.150" W x 0.311" H (9.10mm x 3.80mm x 7.90mm) Fuse Type: Automotive Mounting Type: Requires Holder Operating Temperature: -45°C ~ 125°C Breaking Capacity @ Rated Voltage: 1kA Part Status: Active Current Rating (Amps): 30 A Voltage Rating - DC: 48 V | auf Bestellung 5526 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-30A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 30A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 30A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: green Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-5A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 5A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 5A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: beige Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-5A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 5A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 5A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: beige | Produkt ist nicht verfügbar | |||||||||||||||||
APT-5A | OptiFuse | Description: FUSE AUTO 5A 48VDC BLADE MICRO | auf Bestellung 7467 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-7.5A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 7.5A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 7.5A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: brown | Produkt ist nicht verfügbar | |||||||||||||||||
APT-7.5A | OptiFuse | Description: FUSE AUTO 7.5A 48VDC BLADE MICRO | auf Bestellung 2011 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-7.5A | OPTIFUSE | Category: Other Car Fuses Description: Fuse: fuse; 7.5A; 48VDC; automotive; 9.1mm; MICRO2 Type of fuse: fuse Breaking capacity: 1kA / 48V DC Current rating: 7.5A Rated voltage: 48V DC Kind of fuse: automotive Fuse size: 9.1mm Manufacturer series: MICRO2 Colour: brown Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT-A1500 | APPLETEC | 20221206002 Male Power Connector V2.01.5m Cable length | Produkt ist nicht verfügbar | |||||||||||||||||
APT-C59 | ABB Power Electronics Inc. | Description: EZ APTC59 CAUTION TAG MEN WORKIN | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT-CNOC | Altech Corporation | Description: THERMOSTAT ADJ SPST-NO MODULE Packaging: Bulk Package / Case: Module Mounting Type: DIN Rail Circuit: SPST-NO Termination Style: Screw Terminal Switching Temperature: Adjustable Current Rating - AC: 15A (250V) | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-CNOC | Altech | Thermostats Panel Thermostat NO, Cooling | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-CNOF | Altech Corporation | Description: THERMOSTAT ADJ SPST-NO MODULE Packaging: Bulk Package / Case: Module Mounting Type: DIN Rail Circuit: SPST-NO Termination Style: Screw Terminal Switching Temperature: Adjustable Current Rating - AC: 15A (250V) | auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-CNOF | Altech | Thermostats Panel Thermostat NO, Cooling | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-HNCC | Altech Corporation | Description: THERMOSTAT ADJ SPST-NC MODULE Packaging: Bulk Package / Case: Module Mounting Type: DIN Rail Circuit: SPST-NC Termination Style: Screw Terminal Switching Temperature: Adjustable Current Rating - AC: 15A (250V) | auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-HNCC | Altech | Thermostats Panel Thermostat NC, Heating | Produkt ist nicht verfügbar | |||||||||||||||||
APT-HNCF | Altech Corporation | Description: THERMOSTAT ADJ SPST-NC MODULE Packaging: Bulk Package / Case: Module Mounting Type: DIN Rail Circuit: SPST-NC Termination Style: Screw Terminal Switching Temperature: Adjustable Current Rating - AC: 15A (250V) | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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APT-HNCF | Altech | Thermostats Panel Thermostat NC, Heating | Produkt ist nicht verfügbar | |||||||||||||||||
APT-ME | Phoenix Contact | Connector Accessories Cover Profile Carrier Polyamide Gray | Produkt ist nicht verfügbar | |||||||||||||||||
APT-X | Silicon Labs | Silicon Laboratories APT-X software add-on for WT32 | Produkt ist nicht verfügbar | |||||||||||||||||
APT06DC60HJ | Microsemi Power Products Group | Description: DIODE SIC SCHOTTKY 600V SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT06DC60HJ | Microsemi | Diode Rectifier Bridge Single 600V 6A 4-Pin SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R1AVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001R1BN | Microchip Technology | Trans MOSFET N-CH 1KV 10.5A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R1BN | APT | TO247 09+ | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1001R1BVFR | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001R1HVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001R3BN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001R6BFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R6BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R6BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R6BN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001R6SFLLG | Microchip / Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001R6SFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 8A 3-Pin(2+Tab) D3PAK | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RBN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RBN | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBN | Microchip Technology | Description: MOSFET N-CH 1000V 11A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RBVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | Microchip Technology | Description: MOSFET N-CH 1000V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | Microchip Technology | MOSFET FG, FREDFET, 1000V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RBVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVRG | MICROSEMI | TO247/POWER MOSFET - MOS5 APT1001 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RBVRG | Microchip Technology | Description: MOSFET N-CH 1000V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1001RBVRG | Microchip Technology | MOSFET MOSFET MOS5 1000 V 1 Ohm TO-247 | auf Bestellung 372 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1001RBVRG | Microsemi | Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1001RSLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RSVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RSVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1001RSVRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: SMD Case: D3PAK Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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APT1001RSVRG | Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RSVRG | MICROSEMI | Power MOSFET Transistor APT1001 Anzahl je Verpackung: 31 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1001RSVRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Mounting: SMD Case: D3PAK Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10021JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JFLL | Microchip Technology | Description: MOSFET N-CH 1000V 37A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V | auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10021JFLL | Microchip Technology | Discrete Semiconductor Modules FREDFET MOS7 1000 V 210 mOhm SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | Microchip Technology | Discrete Semiconductor Modules MOSFET MOS7 1000 V 210 mOhm SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | Microchip Technology | Description: MOSFET N-CH 1000V 37A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | MICROSEMI | ISOTOP/POWER MOSFET - MOS7 APT10021 Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | Microchip Technology | Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10021JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10025JN | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10025JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVFR | Microchip Technology | Discrete Semiconductor Modules FREDFET MOS5 1000 V 250 mOhm SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVFR | Microchip Technology | Trans MOSFET N-CH 1KV 34A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVR | Microchip Technology | MOSFET Modules Power Mos V N-CH 1KV 34A 4-Pin | auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10025JVR | Microchip Technology | Trans MOSFET N-CH 1KV 34A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10025JVR | Microchip Technology | Description: MOSFET N-CH 1000V 34A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10025PVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10026JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 595W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.28Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 595W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.28Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JFLL | Microchip Technology | Discrete Semiconductor Modules FREDFET MOS7 1000 V 260 mOhm SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 595W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JLL | Microchip Technology | Discrete Semiconductor Modules MOSFET MOS7 1000 V 260 mOhm SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 595W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JN | Microchip Technology | Trans MOSFET N-CH 1KV 33A 4-Pin SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026JN | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10026L2FLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10026L2FLLG | Microchip Technology | MOSFET FREDFET MOS7 1000 V 260 mOhm TO-264 MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Mounting: THT Case: TO264MAX Technology: POWER MOS 7® Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | MICROSEMI | Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Mounting: THT Case: TO264MAX Technology: POWER MOS 7® Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10026L2LLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Mounting: THT Case: TO264MAX Technology: POWER MOS 7® Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Mounting: THT Case: TO264MAX Technology: POWER MOS 7® Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10026L2LLG | Microchip Technology | MOSFET MOSFET MOS7 1000 V 260 mOhm TO-264 MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT1002R4BN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1002RBN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1002RBNG | Microchip Technology | Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
APT1002RCN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1002RCN | Microchip Technology | Trans MOSFET N-CH 1KV 5.5A 3-Pin(3+Tab) TO-254 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10030 | auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10030L2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10030L2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10035B2FLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10035B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035B2FLLG | Microchip Technology | MOSFET FG, FREDFET,1000V, TO-247 T-MAX, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035B2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035B2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10035B2LLG | Microchip / Microsemi | MOSFET Power MOSFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035B2LLG | Microchip Technology | Trans MOSFET N-CH 1KV 28A | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JFLL | Microsemi | MOSFET Power FREDFET - MOS7 | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10035JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 25A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 520W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 520W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JLL | Microchip Technology | Trans MOSFET N-CH 1KV 25A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JLL | MICROSEMI | ISOTOP/POWER MOSFET - MOS7 APT10035 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JLL Produktcode: 117751 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
APT10035JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 520W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Drain-source voltage: 1kV Drain current: 25A On-state resistance: 0.35Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 520W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Drain-source voltage: 1kV Drain current: 25A On-state resistance: 0.35Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035JLL | Microchip Technology | Discrete Semiconductor Modules FG, MOSFET, 1000V, 0.35_OHM, SOT-227 | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10035LFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10035LFLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, TO-264, RoHS | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10035LFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035LLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10035LLLG | MICROSEMI | TO264/POWER MOSFET - MOS7 APT10035 Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035LLLG | Microchip / Microsemi | MOSFET FG, MOSFET,1000V, TO-264, RoHS | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10035LLLG | Microchip Technology | Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT10035LLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10035LLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RBFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RBFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RBFLLG | Microchip Technology | MOSFET FG, FREDFET, 1000V, TO-247, RoHS | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1003RBLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1003RBLLG | Microchip Technology | Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RBLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RBLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RKFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RKLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1003RKLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RKLLG | Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 1000V, TO-220, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RKLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSFLLG | Microchip Technology | MOSFET FG, FREDFET, 1000V, D3, RoHS, TO-268 | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1003RSFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSFLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, D3, RoHS, TO-268 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSFLLG | Microchip Technology | Description: MOSFET N-CH 1000V 4A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3 [S] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSFLLG/TR | Microchip Technology | MOSFET FREDFET MOS7 1000 V 3 Ohm TO-268 Tape & Reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1003RSLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSLLG | Microchip Technology | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSLLG | Microchip Technology | Description: MOSFET N-CH 1000V 4A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3 [S] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1003RSLLG | Microsemi | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10040B2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10040B2VFRG | Microchip Technology | Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10040B2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10040B2VRG | Microchip Technology | Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10040LVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10040LVFRG | Microchip / Microsemi | MOSFET Power FREDFET - MOS5 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10040LVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10040LVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10043JVR | Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 1000V, 0.43_OHM, SOT-227 | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10043JVR | APT | auf Bestellung 672 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10043JVR | Microchip Technology | Trans MOSFET N-CH 1KV 22A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2FLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10045B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2FLLG | Microchip / Microsemi | Discrete Semiconductor Modules FG, FREDFET, 1000V, TO-247 T-MAX, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 23A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10045B2LLG | Microsemi | Discrete Semiconductor Modules Power MOSFET - MOS7 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10045B2LLG | Microchip Technology | Trans MOSFET N-CH 1KV 23A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045B2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Mounting: THT Case: TO247MAX Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JFLL | Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS7 | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10045JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 21A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 460W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.46Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 460W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.46Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JLL | Microchip Technology | Description: MOSFET N-CH 1000V 21A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10045JLL | Microchip Technology | Discrete Semiconductor Modules FG, MOSFET,1000V, 0.45_OHM, SOT-227 | auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10045JLL | Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET,1000V, 0.45_OHM, SOT-227 | auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10045JLL | Microchip Technology | Trans MOSFET N-CH 1KV 21A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 460W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.45Ω | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045JLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 460W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.45Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045LFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10045LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045LFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 23A 3-Pin(3+Tab) TO-264 Tube | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT10045LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045LFLLG | Microchip / Microsemi | Discrete Semiconductor Modules FG, FREDFET,1000V, TO-264, RoHS | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10045LLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10045LLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045LLLG | Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET,1000V, TO-264, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10045LLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 7® Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT1004R2BN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1004R2KN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1004RAN | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT1004RAN | APT | 0415 | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1004RBN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1004RCN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1004RGN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1004RGNTX | Microchip Technology | Power Mos N Channel Enhancement Mode High Voltage Power Mosfets | Produkt ist nicht verfügbar | |||||||||||||||||
APT1004RKN | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050B2LC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050B2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050B2VFRG | Microchip Technology | MOSFETs FREDFET MOS5 1000 V 50 Ohm TO-247 MAX | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050B2VFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO247MAX Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VFRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO247MAX Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VFRG | MICROSEMI | T-MAX/POWER FREDFET - MOS5 APT10050 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VFRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050B2VRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VRG | MICROSEMI | T-MAX/POWER MOSFET - MOS5 APT10050 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050B2VRG | Microchip / Microsemi | MOSFET Power MOSFET - MOS 5 1000V 21A | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050JN | Microchip Technology | Microchip Technology | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JN | APT | MODULE | auf Bestellung 131 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT10050JN | APT | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10050JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Drain current: 19A On-state resistance: 0.5Ω Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 76A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVFR | Microchip Technology | Trans MOSFET N-CH 1KV 19A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVFR | Microchip Technology | Trans MOSFET N-CH 1KV 19A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVFR | Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, 0.50_OHM, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Drain current: 19A On-state resistance: 0.5Ω Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 76A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVR | Microchip Technology | Trans MOSFET N-CH 1KV 19A 4-Pin SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050JVR | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10050JVRF | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10050LLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050LVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10050LVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVFRG | Microchip Technology | MOSFET FG, FREDFET, 1000V, TO-264, RoHS | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050LVFRG | Microchip Technology / Atmel | Aluminium Electrolytic Capacitors - Radial Leaded RADIAL | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVFRG | Microchip Technology | Description: MOSFET N-CH 1000V 21A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10050LVFRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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APT10050LVR | IXYS | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10050LVRG | MICROSEMI | TO264/POWER MOSFET - MOS5 APT10050 Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVRG | Microchip Technology | MOSFET MOSFET MOS5 1000 V 50 Ohm TO-264 | auf Bestellung 746 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10050LVRG | Microchip Technology | Description: MOSFET N-CH 1000V 21A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10050LVRG | Microchip Technology | Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10050LVRG | Microchip Technology / Atmel | MOSFET FG, MOSFET,1000V, TO-264, RoHS | auf Bestellung 1863 Stücke: Lieferzeit 311-315 Tag (e) |
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APT10050LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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APT10053LNR | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10053LNRG | Microchip / Microsemi | Microchip Technology | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10057WVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100788LL | auf Bestellung 87 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10078BFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10078BFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BFLLG | Microchip Technology | MOSFET FG, FREDFET, 1000V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BFLLG | Microchip Technology | Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10078BLLG | Microchip Technology | MOSFET MOSFET MOS7 1000 V 78 Ohm TO-247 | auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10078BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLLG | Microchip Technology | Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLLG | Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLLG | Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078BLLG | MICROSEMI | TO247/POWER MOSFET - MOS7 APT10078 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10078SFLLG | Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(2+Tab) D3PAK | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SFLLG | Microchip / Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10078SLLG | Microchip Technology | Description: MOSFET N-CH 1000V 14A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3 [S] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLLG | Microchip Technology | MOSFET FG, MOSFET, 1000V, 0.78_OHM, D3, TO-268, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLLG | MICROSEMI | Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 7® Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10078SLLG | Microchip Technology | Trans MOSFET N-CH 1KV 14A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086 | auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10086BLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10086BVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10086BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 1kV Drain current: 13A On-state resistance: 860mΩ Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 1kV Drain current: 13A On-state resistance: 860mΩ Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086BVFRG | Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086BVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10086BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 1kV Drain current: 13A On-state resistance: 860mΩ Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 1kV Drain current: 13A On-state resistance: 860mΩ Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10086BVRG | Microchip / Microsemi | MOSFET FG, MOSFET, 1000V, TO-247, RoHS | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10086BVRG | Microchip Technology | MOSFET MOSFET MOS5 1000 V 86 Ohm TO-247 | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10086SLC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10086SVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10088HVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10090BFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10090BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BFLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BFLLG | Microchip Technology | Description: MOSFET N-CH 1000V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10090BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLLG | Microchip Technology | MOSFET FG, MOSFET, 1000V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLLG | Microchip Technology | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLLG | Microchip Technology | Description: MOSFET N-CH 1000V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V | auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10090BLLG | Microchip Technology | Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090BLLG | MICROSEMI | TO247/POWER MOSFET - MOS7 APT10090 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090SFLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10090SLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10090SLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090SLLG | Microchip Technology | MOSFET FG, MOSFET,1000V, 0.90_OHM, D3, TO-268, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090SLLG | Microchip / Microsemi | MOSFET FG, MOSFET,1000V, 0.90_OHM, D3, TO-268, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10090SLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100D60B2G | MICROCHIP (MICROSEMI) | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100D60B2G | Microchip Technology | Rectifiers FRED D 600 V 100 A TO-247 MAX | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100D60B2G | MICROCHIP (MICROSEMI) | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max | Produkt ist nicht verfügbar | |||||||||||||||||
APT100D60B2G | Microchip Technology | Description: DIODE GEN PURP 600V 100A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: TO-247 Voltage - DC Reverse (Vr) (Max): 600 V | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100D60B2G | Microchip Technology / Atmel | Rectifiers FRED D 600 V 100 A TO-247 MAX | auf Bestellung 89 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100D60BG | Microchip Technology | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
APT100D60BG | Microchip Technology | Description: DIODE GEN PURP 600V 100A TO247 Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V | auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100DL60BG | Microchip / Microsemi | Rectifiers FG, FRED, 600V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT100DL60HJ | Microchip Technology | Diode Rectifier Bridge Single 600V 100A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100DL60HJ | MICROCHIP (MICROSEMI) | Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SOT227B Leads: M4 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 100A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100DL60HJ | MICROCHIP (MICROSEMI) | Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SOT227B Leads: M4 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 100A | Produkt ist nicht verfügbar | |||||||||||||||||
APT100DL60HJ | Microchip Technology | Discrete Semiconductor Modules DOR CC0003 | auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100F50J | Microchip Technology | Trans MOSFET N-CH Si 500V 103A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100F50J | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100F50J | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT100F50J | Microchip / Microsemi | Discrete Semiconductor Modules FG, FREDFET, 500V, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GF60B2R | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GF60JR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GF60JRD | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GF60JU2 | MICROSEMI | SOT-227POWER MODULE - IGBT Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GF60JU3 | Microsemi | IGBT Modules Power Module - IGBT | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GF60JU3 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GF60LR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GLQ65JU2 | Microchip Technology | Description: IGBT MOD 650V 165A 430W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Boost Chopper Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU2 | Microchip Technology | IGBT Modules PM-IGBT-TFS-SOT227 | auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GLQ65JU2 | Microchip Technology | ISOTOP® Boost chopper 650V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU2 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SOT227B Max. off-state voltage: 650V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU2 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SOT227B Max. off-state voltage: 650V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU3 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Case: SOT227B Max. off-state voltage: 650V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU3 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Application: motors Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 270A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Case: SOT227B Max. off-state voltage: 650V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU3 | Microchip Technology | Description: IGBT 600V 100A 430W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -55°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1000A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GLQ65JU3 | Microchip Technology | IGBT Modules CC0107 | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN120B2G | MICROCHIP (MICROSEMI) | APT100GN120B2G THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120B2G | Microchip / Microsemi | IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GN120B2G | Microchip Technology | Trans IGBT Chip N-CH 1200V 245A 960000mW 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120B2G | MICROCHIP | Description: MICROCHIP - APT100GN120B2G - IGBT, 245 A, 960 W, 1.2 kV, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 euEccn: NLR Verlustleistung: 960W Bauform - Transistor: - Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 245A SVHC: No SVHC (23-Jan-2024) | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT100GN120J | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120J | Microchip Technology | IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227 | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN120J | MICROSEMI | APT100GN120J APT100 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120J | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120J | Microchip / Microsemi | IGBT Modules FG, IGBT, 1200V, 100A, SOT-227 | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GN120JDQ4 | Microchip Technology | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120JDQ4 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120JDQ4 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN120JDQ4 | MICROSEMI | ISOTOP®/INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - COMBI Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60B2G | MICROCHIP (MICROSEMI) | APT100GN60B2G THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60B2G | Microchip Technology | Trans IGBT Chip N-CH 600V 229A 625000mW 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60B2G | Microchip / Microsemi | IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHS | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GN60LDQ4G | Microchip Technology | Trans IGBT Chip N-CH 600V 229A 625000mW 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60LDQ4G | MICROCHIP (MICROSEMI) | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 135A; 625W; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 135A Pulsed collector current: 300A Turn-on time: 96ns Turn-off time: 435ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 600nC Case: TO264 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60LDQ4G | Microchip / Microsemi | IGBT Transistors FG, IGBT, 600V, TO-264, RoHS | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GN60LDQ4G | MICROSEMI | TO264/INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - COMBI APT100GN60 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GN60LDQ4G | Microchip Technology | IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 100 A TO-264 | auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN60LDQ4G | MICROCHIP (MICROSEMI) | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 135A; 625W; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 135A Pulsed collector current: 300A Turn-on time: 96ns Turn-off time: 435ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 600nC Case: TO264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JR | Microchip Technology | IGBT Modules FG, IGBT, 1200V, 100A, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JR | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JR | Microchip Technology | Trans IGBT Module N-CH 1.2KV 123A | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JR | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JRDL | MICROSEMI | ISOTOP/INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI APT100GT120 Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JRDQ4 | Microchip / Microsemi | IGBT Modules FG, IGBT-COMBI,1200V,100A, SOT-227 | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GT120JRDQ4 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JRDQ4 | Microchip Technology | Trans IGBT Module N-CH 1200V 123A 570000mW 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JRDQ4 | Microchip Technology | Description: IGBT MOD 1200V 123A 570W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 123 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 570 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 7.85 nF @ 25 V | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120JRDQ4 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 67A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JRDQ4 | Microchip Technology | IGBT Modules IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120JRDQ4 | MICROSEMI | SOT227/INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY COMBI APT100GT120 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JU2 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JU2 | Microchip Technology | IGBT Modules CC0006 | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GT120JU2 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JU2 | Microchip Technology | Description: IGBT MOD 1200V 140A 480W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 480 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 7.2 nF @ 25 V | auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120JU3 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JU3 | MICROCHIP (MICROSEMI) | Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 280A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100GT120JU3 | Microchip Technology | IGBT Modules DOR CC0007 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT120TU2 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GT120TU3 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100GT60B2RG | Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100GT60JR | Microchip Technology | IGBT Modules FG, IGBT, 600V, 100A, SOT-227 | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GT60JR | WL | auf Bestellung 104 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT100GT60JRDQ4 | Microchip / Microsemi | IGBT Modules FG, IGBT-COMBI, 600V,100A, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | MICROSEMI | SOT227/POWER MOSFET - MOS8 APT100M50 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | Microchip Technology | Discrete Semiconductor Modules FG, MOSFET, 500V, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | Microchip Technology | Trans MOSFET N-CH Si 500V 103A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100M50J | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT100MC120JCU2 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...25V Topology: boost chopper Pulsed drain current: 280A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 108A On-state resistance: 17mΩ Power dissipation: 600W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100MC120JCU2 | Microchip / Microsemi | Discrete Semiconductor Modules CC0083 | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT100MC120JCU2 | Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 143A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100MC120JCU2 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 108A; ISOTOP; screw; Idm: 280A Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...25V Topology: boost chopper Pulsed drain current: 280A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 108A On-state resistance: 17mΩ Power dissipation: 600W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20B Produktcode: 92152 | Dioden, Diodenbrücken, Zenerdioden > Schottkydioden | Produkt ist nicht verfügbar | ||||||||||||||||||
APT100S20B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100S20BG | MICROCHIP (MICROSEMI) | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V Case: TO247-2 Mounting: THT Type of diode: Schottky rectifying Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A Semiconductor structure: single diode Max. forward impulse current: 1kA Leakage current: 40µA | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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APT100S20BG | MICROCHIP (MICROSEMI) | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO247-2; Ufmax: 1.06V Case: TO247-2 Mounting: THT Type of diode: Schottky rectifying Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A Semiconductor structure: single diode Max. forward impulse current: 1kA Leakage current: 40µA Anzahl je Verpackung: 1 Stücke | auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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APT100S20BG Produktcode: 149083 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
APT100S20BG | Microchip Technology | Rectifier Diode Schottky 200V 120A 110ns 2-Pin(2+Tab) TO-247 Tube | auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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APT100S20BG | Microchip Technology | Description: DIODE SCHOTTKY 200V 120A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V | auf Bestellung 2981 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100S20BG | MICROSEMI | TO247/SCHOTTKY DISCRETE RECTIFIER APT100S20 Anzahl je Verpackung: 30 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-21 Tag (e) | |||||||||||||||||
APT100S20BG | Microchip Technology | Rectifier Diode Schottky 200V 120A 110ns 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20BG | Microchip Technology | Schottky Diodes & Rectifiers FG, SCHOTTKY, 200V, 100A, TO-247, RoHS | auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100S20BG | Microchip Technology | Rectifier Diode Schottky 200V 120A 110ns 2-Pin(2+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20LCT | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT100S20LCTG | Microchip Technology | Description: DIODE ARRAY SCHOTTKY 200V TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20LCTG | MICROCHIP (MICROSEMI) | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V Mounting: THT Semiconductor structure: common cathode; double Max. forward impulse current: 1kA Leakage current: 40µA Type of diode: Schottky rectifying Case: TO264 Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20LCTG | Microchip Technology | Schottky Diodes & Rectifiers SCHOTTKY Center Tap Rectifier 200 V 100 A TO-264 | auf Bestellung 676 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100S20LCTG | Microchip Technology | Rectifier Diode Schottky 200V 120A 70ns 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT100S20LCTG | MICROCHIP (MICROSEMI) | Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 120A; TO264; Ufmax: 1.06V Mounting: THT Semiconductor structure: common cathode; double Max. forward impulse current: 1kA Leakage current: 40µA Type of diode: Schottky rectifying Case: TO264 Max. off-state voltage: 200V Max. load current: 318A Max. forward voltage: 1.06V Load current: 120A | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60B2 | Microchip Technology | Trans IGBT Chip N-CH 600V 183A 780mW 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60B2 | Microsemi Corporation | Description: IGBT 600V 183A 780W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60B2 | MICROCHIP (MICROSEMI) | APT102GA60B2 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60L | Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT102GA60L | Microchip Technology | Description: IGBT 600V 183A 780W TO264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60L | MICROCHIP (MICROSEMI) | APT102GA60L THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
APT102GA60L | Microchip Technology | Trans IGBT Chip N-CH 600V 183A 780000mW 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60B2C6 | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60B2C6 | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60B2C6 | Microchip Technology | Trans MOSFET N-CH 600V 106A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60B2C6 | Microchip / Microsemi | MOSFET FG, MOSFET, 600V, 106A, TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60B2C6 | Microchip Technology | Description: MOSFET N-CH 600V 106A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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APT106N60B2C6 | Microchip Technology | Trans MOSFET N-CH 600V 106A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60LC6 | Microchip Technology | MOSFETs MOSFET COOLMOS 600 V 106 A TO-264 | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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APT106N60LC6 | Microchip Technology | Description: MOSFET N-CH 600V 106A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Supplier Device Package: TO-264 (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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APT106N60LC6 | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO264 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT106N60LC6 | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO264 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10DC120HJ | Microsemi Corporation | Description: BRIDGE RECT 1P 1.2KV 10A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10DC120HJ | Microsemi | Discrete Semiconductor Modules Power Module - SiC | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M07JVFR | Microchip Technology | MOSFET Modules FREDFET MOS5 100 V 7 mOhm SOT-227 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M07JVFR | MICROSEMI | ISOTOP/POWER FREDFET - MOS5 APT10M07 Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M07JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M07JVFR | Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS5 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10M07JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M07JVFR | Microchip Technology | Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M07JVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M07JVR | Microchip Technology | Microchip Technology | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09B2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M09B2VFRG | Microsemi Corporation | Description: MOSFET N-CH 100V 100A T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09B2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M09LVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M09LVFRG | Microchip Technology | MOSFET Modules FREDFET MOS5 100 V 9 mOhm TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09LVFRG | Microchip Technology | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M09LVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M11B2VFRG | Microsemi Corporation | Description: MOSFET N-CH 100V 100A T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11B2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M11JVFR | Microchip Technology | Trans MOSFET N-CH 100V 144A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVFR | Microchip Technology | MOSFET Modules FREDFET MOS5 100 V 11 mOhm SOT-227 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M11JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 144A; ISOTOP; screw; Idm: 576A Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 144A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVFR | MICROSEMI | ISOTOP/POWER FREDFET - MOS5 APT10M11 Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVFR | Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS5 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10M11JVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M11JVRU2 | Microchip Technology | MOSFET Modules PM-MOSFET-5-SOT227 | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M11JVRU2 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU2 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU2 | Microchip Technology | Trans MOSFET N-CH 100V 142A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU2 | Microsemi Corporation | Description: MOSFET N-CH 100V 142A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU3 | Microchip Technology | MOSFET Modules PM-MOSFET-5-SOT227 | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M11JVRU3 | Microchip Technology | Trans MOSFET N-CH 100V 142A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU3 | Microsemi Corporation | Description: MOSFET N-CH 100V 142A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU3 | Microsemi | Discrete Semiconductor Modules Power Module - Mosfet | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10M11JVRU3 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11JVRU3 | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 106A; ISOTOP; screw; Idm: 576A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 576A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 106A On-state resistance: 11mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVFRG | Microsemi | MOSFET Power FREDFET - MOS5 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVFRG | Microchip Technology | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVR | APT | 0211+ TO-3P | auf Bestellung 96 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT10M11LVRG | Microsemi | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 11mΩ Mounting: THT Gate charge: 450nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 11mΩ Mounting: THT Gate charge: 450nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVRG | Microchip Technology | MOSFET Modules MOSFET MOS5 100 V 11 mOhm TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVRG | Microchip Technology | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M11LVRG | Microchip Technology | Description: MOSFET N-CH 100V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 (L) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M19BVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M19BVFRG | APT | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT10M19BVFRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVR | Microchip Technology | Microchip Technology FG, MOSFET, 100V, 0.019_OHM, TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVR | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVR | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVR | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M19BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | MICROSEMI | TO247/POWER MOSFET - MOS5 APT10M19 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | Microchip Technology | Description: MOSFET N-CH 100V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M19BVRG | Microchip Technology | MOSFET FG, MOSFET, 100V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVFRG | Microsemi | MOSFET Power FREDFET - MOS5 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVFRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVFRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M19SVR-G | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M19SVRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVRG | Microchip Technology | Description: MOSFET N-CH 100V 75A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M19SVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVRG | Microchip Technology | MOSFET FG, MOSFET, 100V, 0.019_OHM, D3, TO-268, RoHS | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M19SVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M19SVRG/TR | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M25BVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M25BVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M25BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10M25BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M25BVRG | Microchip Technology | MOSFET FG, MOSFET, 100V, TO-247, RoHS | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M25BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10M25BVRG | Microchip Technology | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M25BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M25BVRG | Microchip Technology | Description: MOSFET N-CH 100V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT10M25SVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10M30AVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT10SCD120B | MICROSEMI | APT10SCD120B APT10SCD120 Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-21 Tag (e) | |||||||||||||||||
APT10SCD120B | Microsemi Corporation | Description: DIODE SCHOTTKY 1.2KV 36A TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10SCD120BCT | Microsemi Corporation | Description: DIODE SCHOTTKY 1.2KV 36A TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10SCD120K | Microsemi | Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10SCD120K | Microsemi Corporation | Description: DIODE SIL CARB 1.2KV 10A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A | auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10SCD65K | Microsemi Corporation | Description: DIODE SILICON 650V 17A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT10SCD65K | Microchip / Microsemi | Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10SCD65KCT | Microchip / Microsemi | Schottky Diodes & Rectifiers Schottky Center Tap RECTIFIER | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT10SCD65KCT | Microsemi Corporation | Description: DIODE SILICON 650V 17A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT110GF60JN | APT | MODULE | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1147 | APT | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT11F80B | Microchip Technology | Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80B | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80B | Microchip Technology | Description: MOSFET N-CH 800V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80B | Microchip Technology | MOSFET FREDFET MOS8 800 V 11 A TO-247 | auf Bestellung 93 Stücke: Lieferzeit 10-14 Tag (e) |
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APT11F80B | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 46A; 337W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 46A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80B | Microsemi | MOSFET Power FREDFET - MOS8 | auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT11F80B | MICROSEMI | TO247-3/11 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET APT11F80 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80S | Microsemi | MOSFET Power FREDFET - MOS8 | Produkt ist nicht verfügbar | |||||||||||||||||
APT11F80S | Microsemi Power Products Group | Description: MOSFET N-CH 800V 12A D3PAK | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GF120BRD1 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11GF120BRDQ1G | Microsemi Power Products Group | Description: IGBT 1200V 25A 156W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GF120KR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11GF120KRG | Microsemi Corporation | Description: IGBT 1200V 25A 156W TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GF120KRG | Microchip Technology | Trans IGBT Chip N-CH 1200V 25A 156mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GP60BDQB | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11GP60BDQBG | Microchip Technology | POWER MOS 7 IGBT A NEW GENERATION OF HIGH VOLTAGE POWER | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GP60BDQBG | Microsemi Corporation | Description: IGBT 600V 41A 187W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A Supplier Device Package: TO-247-3 IGBT Type: PT Td (on/off) @ 25°C: 7ns/29ns Switching Energy: 46µJ (on), 90µJ (off) Test Condition: 400V, 11A, 5Ohm, 15V Gate Charge: 40 nC Part Status: Obsolete Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 187 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GP60BDQBG | APT | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT11GP60K | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11GP60KG | Microchip / Microsemi | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||||
APT11GP60SA | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11N80BC3 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11N80BC3G | Microchip Technology | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80BC3G | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80BC3G | Microchip Technology | MOSFETs MOSFET COOLMOS 800 V 11 A TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80BC3G | Microchip Technology | Description: MOSFET N-CH 800V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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APT11N80BC3G | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80BC3G Produktcode: 176617 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
APT11N80KC3 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT11N80KC3G | MICROSEMI | TO-220AB/11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET APT11N80 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80KC3G Produktcode: 18385 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
APT11N80KC3G | Microchip Technology | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||||
APT11N80KC3G | Microsemi Corporation | Description: MOSFET N-CH 800V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: TO-220 [K] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2BFLLG | Microchip Technology | MOSFET FREDFET MOS7 1200 V 1.2 Ohm TO-247 | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1201R2BFLLG | Microchip Technology | Description: MOSFET N-CH 1200V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V | auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1201R2BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2BFLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, TO-247, RoHS | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1201R2BFLLG | MICROSEMI | TO-247 [B]POWER FREDFET - MOS7 Anzahl je Verpackung: 30 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2BLL | APT | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT1201R2BLLG | Microchip Technology | Description: MOSFET N-CH 1200V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 6A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1201R2BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R2SLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R4BFLLG | Microsemi Corporation | Description: MOSFET N-CH 1200V 9A TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BFLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, TO-247, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R4BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BLLG | Microchip Technology | MOSFET MOS7 1200 V 1.4 Ohm TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BLLG | Microchip Technology | Description: MOSFET N-CH 1200V 9A TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4BLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4SFLLG | Microchip / Microsemi | MOSFET FG, FREDFET,1200V, TO-268, RoHS | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1201R4SFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4SFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R4SLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R5BVFR Produktcode: 111350 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
APT1201R5BVFR | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R5BVFRG | Microsemi | MOSFET Power FREDFET - MOS5 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 40A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 40A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5BVR | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R5BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5BVRG | Microchip Technology | MOSFET MOSFET MOS5 1200 V 1.5 Ohm TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5SVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R5SVFRG | Microchip / Microsemi | MOSFET Power FREDFET - MOS5 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R5SVFRG | Microchip Technology | Trans MOSFET N-CH 1.2KV 10A 3-Pin(2+Tab) D3PAK | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R6BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 230nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 230nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVFRG Produktcode: 171513 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
APT1201R6BVFRG | Microchip Technology | Description: MOSFET N-CH 1200V 8A TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVFRG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, 1.6_OHM, TO-247, RoHS | auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1201R6BVR | APT | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT1201R6BVR Produktcode: 135464 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
APT1201R6BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVRG | Microchip Technology | Description: MOSFET N-CH 1200V 8A TO-247 Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVRG | Microchip Technology | MOSFET MOSFET MOS5 1200 V 1.6 Ohm TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6BVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6SVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1201R6SVFRG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, D3, TO-268, RoHS | auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1201R6SVFRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 230nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6SVFRG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 32A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 230nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT1201R6SVFRG | MICROSEMI | D3PAK/POWER FREDFET - MOS5 APT1201R6 Anzahl je Verpackung: 31 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL | Microchip Technology | Description: MOSFET N-CH 1200V 30A SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL | Microsemi | Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube | auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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APT12031JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12031JFLL Produktcode: 129751 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
APT12031JLL | APT | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
APT12040JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 24A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JFLL | Microchip / Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12040JVFR | Microchip Technology | Trans MOSFET N-CH 1.2KV 26A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12040JVR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 700W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JVR | Microchip Technology | Trans MOSFET N-CH 1.2KV 26A 4-Pin SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JVR | Microchip Technology | Discrete Semiconductor Modules MOSFET MOS5 1200 V 400 mOhm SOT-227 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12040JVR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 26A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 700W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040JVR | Microchip Technology | Description: MOSFET N-CH 1200V 26A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 13A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 1200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V | auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12040JVR | Microchip Technology | Trans MOSFET N-CH 1.2KV 26A 4-Pin SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040L2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040L2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040L2FLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040L2FLLG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, TO-264 MAX, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT12040L2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12045 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12045L2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12045L2VFRG | Microchip Technology | Trans MOSFET N-CH 1.2KV 28A 3-Pin(3+Tab) TO-264 MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12045L2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1204R7BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7BFLLG | Microchip Technology | Description: MOSFET N-CH 1200V 3.5A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V | auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1204R7BFLLG | Microchip Technology | MOSFET FREDFET MOS7 1200 V 4.7 Ohm TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7BFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7BFLLG | MICROSEMI | TO247-3/3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET APT1204R7 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7BFLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7KFLLG | Microchip / Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7KFLLG | MICROSEMI | TO220/POWER FREDFET MOS7 APT1204 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7KFLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(3+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7KFLLG | Microsemi Corporation | Description: MOSFET N-CH 1200V 3.5A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7KLLG | APT | 09+ | auf Bestellung 198 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1204R7SFLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7SFLLG | MICROSEMI | D3PAK 3/3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER,MOSFET APT1204 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7SFLLG | Microchip Technology | Description: MOSFET N-CH 1200V 3.5A D3PAK | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7SFLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(2+Tab) D3PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7SFLLG | Microchip Technology | MOSFET FREDFET MOS7 1200 V 4.7 Ohm TO-268 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1204R7SFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A | Produkt ist nicht verfügbar | |||||||||||||||||
APT1204R7SFLLG | MICROCHIP (MICROSEMI) | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2FLLG | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 22A T-MAX | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12057B2FLLG | Microchip Technology | MOSFET FG, FREDFET, 1200V, 0.57_OHM, TO-247 T-MAX, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2FLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2FLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 22A 3-Pin(3+Tab) T-MAX Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12057B2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2LLG | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 22A T-MAX | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2LLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057B2LLG | Microchip Technology | MOSFET FG, MOSFET,1200V, TO-247 T-MAX, RoHS | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12057JFLL | Microsemi | Trans MOSFET N-CH 1.2KV 19A 4-Pin SOT-227 Tube | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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APT12057JFLL | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 19A SOT-227 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12057JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 19A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 76A Power dissipation: 520W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 19A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JFLL | Microchip Technology | MOSFET FG, FREDFET,1200V, 0.57_OHM, SOT-227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 19A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 76A Power dissipation: 520W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 19A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JLL | Microsemi | MOSFET Power MOSFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JLL | Microsemi Corporation | Description: MOSFET N-CH 1200V 19A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057JLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12057LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264 Mounting: THT Case: TO264 Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057LFLLG | Microchip Technology | MOSFET FG, FREDFET,1200V,0.57_OHM, TO-264, RoHS | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057LFLLG | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 22A TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264 Mounting: THT Case: TO264 Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12057LFLLG | Microchip / Microsemi | MOSFET FG, FREDFET,1200V,0.57_OHM, TO-264, RoHS | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12057LLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12060 | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12060B2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12060B2VR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12060LVFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12060LVFRG | MICROSEMI | TO264/POWER FREDFET - MOS7 APT12060 Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVFRG | Microchip Technology | MOSFET FREDFET MOS5 1200 V 60 Ohm TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 80A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 650nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVFRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 80A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 650nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVFRG | Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, TO-264, RoHS | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12060LVFRG | Microchip Technology | Trans MOSFET N-CH 1.2KV 20A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVFRG | Microchip Technology | Description: MOSFET N-CH 1200V 20A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVR | APT | FBGA456 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT12060LVRG | Microchip Technology | MOSFET MOSFET MOS5 1200 V 60 Ohm TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVRG | Microchip Technology | Power MOSFET 1K2V 20A Avalanche | Produkt ist nicht verfügbar | |||||||||||||||||
APT12060LVRG | Microchip Technology | Description: MOSFET N-CH 1200V 20A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 (L) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12060LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067B2FLLG | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 18A T-MAX | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12067B2FLLG | Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067B2LL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12067B2LLG | Microsemi | MOSFET Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067B2LLG | Microsemi Corporation | Description: MOSFET N-CH 1200V 18A T-MAX Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 17A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 670mΩ Pulsed drain current: 68A Power dissipation: 463W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067JFLL | Microchip Technology | Trans MOSFET N-CH 1.2KV 17A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067JFLL | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 17A SOT-227 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12067JFLL | Microchip Technology | MOSFET FG, FREDFET, 1200V, 0.67_OHM, TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067JFLL | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 17A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 670mΩ Pulsed drain current: 68A Power dissipation: 463W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067JLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12067JLL | Microsemi Power Products Group | Description: MOSFET N-CH 1200V 17A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 On-state resistance: 670mΩ Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Mounting: THT Gate charge: 150nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LFLLG | Microsemi | MOSFET Power FREDFET - MOS7 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LFLLG | Microchip Technology | Description: MOSFET N-CH 1200V 18A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LFLLG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 On-state resistance: 670mΩ Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Mounting: THT Gate charge: 150nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LFLLG | Microchip Technology | Trans MOSFET N-CH 1.2KV 18A 3-Pin(3+Tab) TO-264 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12067LLL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12080B2VFR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12080JVFR | Microsemi | MOSFET Power FREDFET - MOS5 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12080JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.8Ω Pulsed drain current: 60A Power dissipation: 450W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080JVFR | MICROCHIP (MICROSEMI) | Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.8Ω Pulsed drain current: 60A Power dissipation: 450W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080JVFR | Microchip Technology | Trans MOSFET N-CH 1.2KV 15A 4-Pin SOT-227 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080JVR | ST | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT12080JVR | APT | MODULE | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT12080LVFR | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12080LVFRG | MICROSEMI | TO-264 [L]POWER FREDFET - MOS5 Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080LVR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12080LVRG | Microchip Technology | Description: MOSFET N-CH 1200V 16A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 8A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12080LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 485nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080LVRG | MICROSEMI | Power MOS V is a new generation of high voltage N-Channel enhancement mode APT12080 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080LVRG | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 485nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT12080LVRG | Microchip Technology | MOSFET MOS5 1200 V 80 Ohm TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211 | PANASONIC | Description: PANASONIC - APT1211 - Optokoppler, DIP, 4 Pin(s), 5 kV, Nulldurchgang, 600 V tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: DIP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: To Be Advised | auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1211 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211 | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211A | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4SMD Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211A | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin DIP SMD Tube | auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1211AT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 4-PIN DIL SMD, tube packing | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AT | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AX | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin DIP SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AXT | Panasonic Electric Works | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin DIP SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AXT | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AZ | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin DIP SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AZ | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211AZT | Panasonic Electric Works | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin DIP SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211S | Panasonic Industrial Devices | Triac & SCR Output Optocouplers 50mA 600V TRIAC ZERO-CROSS | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211S | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin SOP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211S | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin SOP Tube | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1211S | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211SX | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211SX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 50mA 50V Phototriac Coupler | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211SX | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 2649 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211SXT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/50mA, Zero-cross, I/O=3,75kV, 4-PIN SOP, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211SZ | PANASONIC | Description: PANASONIC - APT1211SZ - Optokoppler, SOP, 4 Pin(s), 3.75 kV, Nulldurchgang, 600 V, APT Series Anzahl der Pins: 4 Isolationsspannung: 3.75 Triac-Betriebsart: Nulldurchgang Bauform - Optokoppler: SOP Periodische Spitzen-Sperrspannung: 600 Produktpalette: APT Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211SZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 50mA 50V Phototriac Coupler | auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211SZ | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211SZ | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin SOP T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1211SZT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/50mA, Zero-cross, I/O=3,75kV, 4-PIN SOP, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211T | Panasonic Electric Works | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211W | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1211W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WA | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAJ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAW | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAW | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAYJ | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 4-PIN DIL SMD wide terminal, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1211WAYJ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212 | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1212 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP Tube | auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1212 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1212(EA) | NAIS | 03+ | auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1212(EA) | NAIS | 03+ | auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1212A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212A | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6SMD Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1212AJ | Panasonic Electric Works | APT1212AJ | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AX | PANASONIC | Description: PANASONIC - APT1212AX - Optokoppler, DIP, Oberflächenmontage, 6 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series Anzahl der Pins: 6 Isolationsspannung: 5 Triac-Betriebsart: Nulldurchgang Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600 Produktpalette: APT Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 947 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1212AZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AZ | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212AZJ | Panasonic Electric Works | APT1212AZJ | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212D05 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212W | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212WA | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1212WAW | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212WAW | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1212WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1212WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT1221 | PANASONIC | Description: PANASONIC - APT1221 - Optokoppler, DIP, 4 Pin(s), 5 kV, Momentwert, 600 V tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Momentwert hazardous: false Bauform - Optokoppler: DIP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1221 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 4-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221 | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1652 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototriac Coupler | auf Bestellung 1000 Stücke: Lieferzeit 192-196 Tag (e) |
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APT1221A | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4SMD Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221A | PANASONIC | Description: PANASONIC - APT1221A - Optokoppler, DIP, 4 Pin(s), 5 kV, Momentwert, 600 V tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Momentwert hazardous: false Bauform - Optokoppler: DIP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: To Be Advised | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1221AT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Non-zero-cross, I/O=5,0kV, 4-PIN DIL SMD, tube packing | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221AX | PANASONIC | Description: PANASONIC - APT1221AX - Optokoppler, DIP, Oberflächenmontage, 4 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: To Be Advised | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1221AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221AXT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Non-zero-cross, I/O=5,0kV, 4-PIN DIL SMD, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221AZ | PANASONIC | Description: PANASONIC - APT1221AZ - Optokoppler, DIP, Oberflächenmontage, 4 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series Anzahl der Pins: 4 Isolationsspannung: 5 Triac-Betriebsart: Nulldurchgang Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600 Produktpalette: APT Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221AZ | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221AZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221S | Panasonic Industrial Devices | Triac & SCR Output Optocouplers 50mA 600V TRIAC NON ZERO-CROSS | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221S | PANASONIC | Description: PANASONIC - APT1221S - Optokoppler, SOP, 4 Pin(s), 3.75 kV, Momentwert, 600 V tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 3.75kV euEccn: NLR Triac-Betriebsart: Momentwert hazardous: false Bauform - Optokoppler: SOP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1221S | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 3141 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221ST | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/50mA, Non-zero-cross, I/O=3,75kV, 4-PIN SOP, tube packing | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221SX | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221SX | PANASONIC | Description: PANASONIC - APT1221SX - Optokoppler, SOP, 4 Pin(s), 3.75 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 3.75kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: SOP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: No SVHC (23-Jan-2024) | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1221SX | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221SX | Panasonic | 2006 | auf Bestellung 2657 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1221SX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 50mA Random Phototriac Coupler | auf Bestellung 2000 Stücke: Lieferzeit 108-112 Tag (e) |
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APT1221SXT | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221SXT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/50mA, Non-zero-cross, I/O=3,75kV, 4-PIN SOP, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221SZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 50mA Random Phototriac Coupler | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221SZ | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221SZT | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/50mA, Non-zero-cross, I/O=3,75kV, 4-PIN SOP, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221W | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1221W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WA | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WAW | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WAW | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 4DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1221WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222 | PAZ | 0620NO | auf Bestellung 480 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1222 | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222 | PAZ | 09+ | auf Bestellung 498 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1222 | PANASONIC | Description: PANASONIC - APT1222 - Optokoppler, DIP, 6 Pin(s), 5 kV, Momentwert, 600 V tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 6Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Momentwert hazardous: false Bauform - Optokoppler: DIP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: To Be Advised | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1222 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random SSR NCNR | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222(EA) | NAIS | 03+ | auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1222(EA) | NAIS | 03+ | auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
APT1222A | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6SMD Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Coupler SSR | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222A | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AD05 | Panasonic Electric Works | Solid State-Relays | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Coupler SSR | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222AX | PANASONIC | Description: PANASONIC - APT1222AX - Optokoppler, DIP, Oberflächenmontage, 6 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series Anzahl der Pins: 6 Isolationsspannung: 5 Triac-Betriebsart: Nulldurchgang Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600 Produktpalette: APT Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AX | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AZ | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AZ | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AZ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Coupler SSR | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222AZD05 | Panasonic Electric Works | Phototriac coupler, Solid state relay | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222D05 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC TY 600V 100mA 50V Coupler SSR | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222W | PANASONIC | Description: PANASONIC - APT1222W - Optokoppler, DIP, 6 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 6Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: DIP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: To Be Advised | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1222W | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WA | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WAW | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WAW | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Cut Tape (CT) Package / Case: 5-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222WAY | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tape & Reel (TR) Package / Case: 5-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers AC 600V 100mA Random Phototria Coupler Wd | auf Bestellung 937 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1222WAYJ | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Non-zero-cross, I/O=5,0kV, 6-PIN DIL SMD wide terminal, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1222WJ | Panasonic Electric Works | PhotoTriac-Coupler, 1-Form-A, 600V/100mA, Non-zero-cross, I/O=5,0kV, 6-PIN DIL PC board wide terminal, tube packing | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 258 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1231 | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP | auf Bestellung 868 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231A | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP | auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1231AX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1231AX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231AXJ | Panasonic Electric Works | Photo Triac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 4-PIN DIL SMD, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231S | Panasonic Electric Works | Description: OPTOISOLATOR 3.75KV TRIAC 4SOP | auf Bestellung 8250 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231S | Panasonic Industrial Devices | Triac & SCR Output Optocouplers Photo triac Coupler | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231S | PANASONIC | Description: PANASONIC - APT1231S - Optokoppler, SOP, 4 Pin(s), 3.75 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pins Isolationsspannung: 3.75kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: SOP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1231SJ | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231SJ | Panasonic Electric Works | Photo Triac-Coupler, 1-Form-A, 600V/50mA, Zero-cross, I/O=5,0kV, 4-PIN SOP SMD, tube packing | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231SX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 13227 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231SX | PANASONIC | Description: PANASONIC - APT1231SX - Optokoppler, SOP, 4 Pin(s), 3.75 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) Isolationsspannung: 3.75kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: SOP Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: No SVHC (23-Jan-2024) | auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1231SX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231SX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1231W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WAY | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WAY | Panasonic | Triac & SCR Output Optocouplers | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WAY | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 4DIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 3750Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 4-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 50 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1231WAYJ | Panasonic Electric Works | Photo Triac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 4-PIN DIL SMD, tape and reel, wide terminal | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1231WJ | Panasonic Electric Works | Photo Triac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 4-PIN DIL PC board, tube packing, wide terminal | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232 | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232 | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232 | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT1232A | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232A | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232A | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232A | PANASONIC | Description: PANASONIC - APT1232A - Optokoppler, DIP, Oberflächenmontage, 6 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series tariffCode: 85364900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 6Pin(s) Isolationsspannung: 5kV euEccn: NLR Triac-Betriebsart: Nulldurchgang hazardous: false Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600V rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: APT Series SVHC: No SVHC (23-Jan-2024) | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT1232AX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232AX | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 2000 Stücke: Lieferzeit 374-378 Tag (e) |
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APT1232AX | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP | auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232AZ | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP SMD T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1232AZ | Panasonic Electric Works | Description: OPTOISOLATOR 5KV TRIAC 6DIP | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232AZ | PANASONIC | Description: PANASONIC - APT1232AZ - Optokoppler, DIP, Oberflächenmontage, 6 Pin(s), 5 kV, Nulldurchgang, 600 V, APT Series Anzahl der Pins: 6 Isolationsspannung: 5 Triac-Betriebsart: Nulldurchgang Bauform - Optokoppler: DIP, Oberflächenmontage Periodische Spitzen-Sperrspannung: 600 Produktpalette: APT Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232AZ | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin PDIP SMD T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1232AZJ | Panasonic Electric Works | Photo Triac-Coupler, 1-Form-A, 600V/100mA, Zero-cross, I/O=5,0kV, 6-PIN DIL SMD, tape and reel | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232W | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232W | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232WA | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP Packaging: Tube Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232WA | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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APT1232WAY | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232WAY | Panasonic Industrial Devices | Triac & SCR Output Optocouplers APT Phototriac | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232WAY | Panasonic | Optocoupler Triac AC-OUT 1-CH 600V 5-Pin DIP SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT1232WAY | Panasonic Electric Works | Description: PHOTOTRIAC COUPLER 600V 6DIP Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.21V Voltage - Isolation: 5000Vrms Approval Agency: cUR, VDE Current - Hold (Ih): 3.5mA Turn On Time: 100µs (Max) Supplier Device Package: 6-DIP Gull Wing Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA | auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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APT12F60K | Microchip Technology | Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12F60K | Microsemi Corporation | Description: MOSFET N-CH 600V 12A TO220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12F60K | MICROSEMI | TO220AB/12 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET APT12F60 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12GT60BR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12GT60BRG | Microchip Technology | Trans IGBT Chip N-CH 600V 25A 108000mW 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12GT60BRG | Microsemi Power Products Group | Description: IGBT 600V 25A 108W TO247 | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT12GT60KR | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
APT12GT60KRG | Microchip Technology | Trans IGBT Chip N-CH 600V 25A 108000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12M80B | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 45A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
APT12M80B | MICROCHIP (MICROSEMI) | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 45A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 80nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
APT12M80B | Microchip Technology | Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
APT12M80B | Microchip Technology | MOSFET FG, MOSFET, 800V, TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
APT12M80B | Microchip Technology | Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||||
APT12MMCLR | PRO POWER | Description: PRO POWER - APT12MMCLR - PACKAGING TAPE PP 12MM X 66M tariffCode: 39191080 productTraceability: No rohsCompliant: NA euEccn: NLR Rollenlänge - imperial: 216ft hazardous: false Bandbreite - Imperial: 0.47" rohsPhthalatesCompliant: NA Rollenlänge - metrisch: 66m Bandbreite - Metrisch: 12mm usEccn: EAR99 Klebebandfarbe: Transparent Produktpalette: Pro Power - Clear Packaging Tapes SVHC: Boric acid (14-Jun-2023) | auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
APT13003DHZTR-G1 | Diodes Incorporated | Description: IC TRANSISTOR HIGH VOLT TO92 Packaging: Tape & Box (TB) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DI-G1 | Diodes Incorporated | Description: TRANS NPN 450V 1.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-251 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 24 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DI-G1 | Diodes Incorporated | Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 24W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DI-G1 | Diodes Incorporated | Description: TRANS NPN 450V 1.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-251 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 24 W | auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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APT13003DU-E1 | Diodes Incorporated | Description: TRANS NPN DARL 450V 1.5A TO126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DU-G1 | Diodes Incorporated | Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W | auf Bestellung 2824 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT13003DU-G1 | Diodes Incorporated | Description: TRANS NPN 450V 1.5A TO126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 20 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DU-G1 | Diodes Inc | Trans GP BJT NPN 450V 1.5A 3-Pin TO-126 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DZTR-G1 | Diodes Incorporated | Description: TRANS NPN 450V 1.5A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DZTR-G1 | Diodes Inc | Trans GP BJT NPN 450V 1.5A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DZTR-G1 | Diodes Incorporated | Description: TRANS NPN 450V 1.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003DZTR-G1 | Diodes Incorporated | Bipolar Transistors - BJT 250V NPN High Volt 700Vces 450Vceo 1.1W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EU-E1 | Diodes Incorporated | Description: TRANS NPN 465V 1.5A TO126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 465 V Power - Max: 1.1 W Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EU-G1 | Diodes Incorporated | Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 465V 20W | auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT13003EU-G1 | Diodes Inc | Trans GP BJT NPN 465V 1.5A 3-Pin TO-126 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EU-G1 | Diodes Incorporated | Description: TRANS NPN 465V 1.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 465 V Power - Max: 20 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EU-G1 | Diodes Zetex | Trans GP BJT NPN 465V 1.5A 3-Pin TO-126 Bulk | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EZTR-G1 | Diodes Inc | Trans GP BJT NPN 465V 1.5A 1100mW 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EZTR-G1 | Diodes Incorporated | Description: TRANS NPN 465V 1.5A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 465 V Power - Max: 1.1 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EZTR-G1 | Diodes Zetex | Trans GP BJT NPN 465V 1.5A 1100mW 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003EZTR-G1 | Diodes Incorporated | Bipolar Transistors - BJT 465V NPN High Volt 700Vces 450Vceo | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003HU-G1 | Diodes Incorporated | Description: TRANS NPN 465V 1.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 465 V Power - Max: 20 W | Produkt ist nicht verfügbar | |||||||||||||||||
APT13003HU-G1 | Diodes Incorporated | Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 465V 20W | auf Bestellung 3635 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
APT13003HZTR-G1 | Diodes Incorporated | Bipolar Transistors - BJT 465V NPN High Volt 700Vces 450Vceo | Produkt ist nicht verfügbar |