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APT10M07JVFR Microsemi


Hersteller: Microsemi
Discrete Semiconductor Modules Power FREDFET - MOS5
auf Bestellung 6 Stücke:

Lieferzeit 10-14 Tag (e)
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Technische Details APT10M07JVFR Microsemi

Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A, Mechanical mounting: screw, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 900A, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 100V, Drain current: 225A, On-state resistance: 7mΩ, Power dissipation: 700W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote APT10M07JVFR

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APT10M07JVFR APT10M07JVFR Hersteller : Microchip Technology 17517568350181526589-apt10m07jvfr-datasheet.pdf Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube
Produkt ist nicht verfügbar
APT10M07JVFR Hersteller : MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10M07JVFR Hersteller : MICROSEMI ISOTOP/POWER FREDFET - MOS5 APT10M07
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
APT10M07JVFR Hersteller : Microchip Technology APT10M07JVFR_A-1859498.pdf Discrete Semiconductor Modules FREDFET MOS5 100 V 7 mOhm SOT-227
Produkt ist nicht verfügbar
APT10M07JVFR Hersteller : MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 225A
On-state resistance: 7mΩ
Power dissipation: 700W
Polarisation: unipolar
Produkt ist nicht verfügbar