APT100F50J

APT100F50J Microchip Technology


7914123409508176559-apt100f50j-datasheet.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH Si 500V 103A 4-Pin SOT-227 Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details APT100F50J Microchip Technology

Category: Transistor modules MOSFET, Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W, Mechanical mounting: screw, Drain current: 65A, On-state resistance: 36mΩ, Power dissipation: 960W, Polarisation: unipolar, Case: ISOTOP, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 490A, Semiconductor structure: single transistor, Drain-source voltage: 500V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote APT100F50J

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
APT100F50J Hersteller : MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 490A
Semiconductor structure: single transistor
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100F50J APT100F50J Hersteller : Microchip / Microsemi APT100F50J_C-1593755.pdf Discrete Semiconductor Modules FG, FREDFET, 500V, SOT-227
Produkt ist nicht verfügbar
APT100F50J Hersteller : MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 490A
Semiconductor structure: single transistor
Drain-source voltage: 500V
Produkt ist nicht verfügbar